[June 27, 2017] |
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Technology Analysis of TSMC's Silicon Capacitor Deep Trench Capacitor - Research and Markets
Research and Markets has announced the addition of the "TSMCSilicon
CapacitorDeep Trench Capacitor: Technology Analysis" report to
their offering.
Due to TSMC, Integrated Passive Devices (IPD) are back in the mobile
industry. Information about the Apple (News - Alert) A10 application processor (AP)
integrated into the firm's latest flagship, the iPhone 7, mentions the
use of the first PoP Wafer Level Packaging for consumer devices
developed by TSMC, called integrated Fan-Out - Package-on-Package
(inFO-PoP). To enable this, TSMC has also integrated a brand new
technology that has never been proposed before for high volume products.
It is using high-density Deep Trench Capacitors (DTCs) on silicon
substrates as and-side decoupling capacitors.
Located under the inFO-PoP, the Land-Side Capacitor (LSC) is in
flip-chip configuration and supported by an extra layer on the printed
circuit (PCB). The LSC has been developed by TSMC using trench
capacitors to increase the capacitive area without changing the
footprint of the component. This can compete with multilayer ceramic
capacitor (MLCC) technology.
In this report, we show the differences from ceramic technology and the
innovations of this capacitor, including the trench silicon, oxide
deposition and electrical performances. The process is compared to IPDiA
technology. Detailed comparison with the LSC in the Exynos 8 and the
Snapdragon 820 APs will explain the pros and cons of TSMC's LSC
technology.
This DTC process enables TSMC to offer a very thin capacitor, with high
density and the same footprint as a MLCC 0204 component. The result is
very cost-effective, as comparisons with ceramic capacitors in this
report will show.
For more information about this report visit https://www.researchandmarkets.com/research/9ld33t/tsmcsilicon
View source version on businesswire.com: http://www.businesswire.com/news/home/20170627006223/en/
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