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Spin Transfer Technologies to Discuss MRAM's Progression to Replace Embedded SRAM Applications and Development as a Storage Class Memory at MRAM Developer Day and Flash Memory Summit
Spin Transfer Technologies, Inc. (STT) will have several executive
spokespeople chairing, presenting and participating in a number of
sessions at the MRAM
Developer Day and the Flash
Memory Summit. STT is the leading developer of advanced STT-MRAM
solutions for embedded SRAM and stand-alone DRAM applications.
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MRAM Developer Day:
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At MRAM Developer Day, STT will be participating in two sessions: MRAM
Application Briefs and MRAM in 2024 and How We Got There.
During both sessions, STT executives will discuss how the data
demand of new technologies combined with the pressing limitations
of existing solid state memories is leading to the rise of
pioneering replacement memories - including MRAM. Though MRAM has
long been plagued with serious deficiencies regarding performance,
retention and endurance, new innovations have solved these issues.
For both sessions, STT's Vice President of Product, Dr. Andrew
Walker, will address MRAM's current positioning to become the
mainstream memory solution to supplant embedded SRAM and how MRAM
will proceed towards DRAM replacement and new forms of Storage
Class Memory.
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SESSION DETAILS:
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Title: MRAM Application Briefs
Date:
Monday, August 6th, 2018, 2-3:15 p.m. PT
Location:
Great America Meeting Room 1
Chairperson: Jeff
Lewis, SVP of Business Development, Spin Transfer Technologies
Paper
Presenter: Andrew Walker, VP of Product, Spin Transfer
Technologies, The Magnetic Migration into the Memory Hierarchy
Title: Panel on MRAM in 2024 and How We Got There
Date:
Monday, August 6th, 2018, 5-6 p.m. PT
Location:
Great America Meeting Room 2
Chairperson: Satoru
Araki, Senior Director of Program/Product Management, Spin
Transfer Technologies
Panel Member: Andrew Walker, VP
of Product, Spin Transfer Technologies
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WHERE:
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Santa Clara Convention Center
5001 Great America Parkway
Santa
Clara, CA (News - Alert), USA
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Flash Memory Summit:
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During Flash Memory Summit, STT will participate in two separate
tracks at the show: MRAM (New Memory Technologies Track) and Breaking
Through Impenetrable Barriers (History Track). Dr. Walker will
speak on developments in semiconductor storage technology that have
led to the current state of the memory market and recent
advancements in MRAM technology to improve its speed and endurance
to levels competitive with SRAM and DRAM solutions. Dr. Walker will
also discuss the origins of current market implementations of NVM,
the rise of 3D NAND flash, and the development of alternative
memories, such as MRAM, aimed at replacing embedded SRAM.
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SESSION DETAILS:
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Title: NEWM-202B-1: MRAM (New Memory Technologies Track)
Date:
Wednesday, August 8, 2018, 4:40-5:45 p.m. PT
Location: Ballroom
C
Panel Member: Andrew Walker, VP of Product, Spin
Transfer Technologies, The Engine: SRAM/DRAM Endurance and
Speed with STT-MRAM
Title: HIST-301B-1: Breaking Through Impenetrable
Barriers (History Track)
Date: Thursday, August 9,
2018, 9:45-10:50 a.m. PT
Location: Ballroom G
Paper
Presenter: Andrew Walker, VP of Product, Spin Transfer
Technologies, Breaking through Impenetrable Barriers - The Key
to the Evolution of Solid State
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WHERE:
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Santa Clara Convention Center
5001 Great America Parkway
Santa
Clara, CA, USA
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About Spin Transfer Technologies
Spin Transfer Technologies, Inc. develops STT-MRAM technologies that
combine advanced magnetics technologies, circuits and memory
architectures to create the industry's lowest-cost, highest-performance
STT-MRAM memories. The company's disruptive STT-MRAM solutions aim to
replace embedded SRAM and DRAM. The company was established by Allied
Minds and New York University. For more information, please visit www.spintransfer.com.
View source version on businesswire.com: https://www.businesswire.com/news/home/20180806005019/en/
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