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Freescale Semiconductor Assigned Patent for Method of Making Semiconductor Structure Useful in Making Split Gate Non-volatile Memory Cell

[February 10, 2014]

Freescale Semiconductor Assigned Patent for Method of Making Semiconductor Structure Useful in Making Split Gate Non-volatile Memory Cell

(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Feb. 10 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,643,123) developed by Cheong M. Hong, Austin, Texas, and Brian A. Winstead, Austin, Texas, for a "method of making a semiconductor structure useful in making a split gate non-volatile memory cell." The patent application was filed on April 13, 2011 (13/085,533). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=3&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=113&f=G&l=50&co1=AND&d=PTXT&s1=20140204.PD.&s2=%28TX.ASST.%29&OS=ISD/02/04/2014+AND+AS/TX&RS=ISD/02/04/2014+AND+AS/TX Written by Balkishan Dalai; edited by Jaya Anand.