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Toshiba Adds Family of High-Voltage Power MOSFETs Using Advanced pi-MOS VII Process Technology for AC/DC and Ballast ApplicationsIRVINE, Calif., Jan 20, 2009 /PRNewswire via COMTEX/ -- 500V and 600V MOSFETs Combine Advanced Process Technology with Optimized Planar Cell Structure to Increase Power Density and Efficiency Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage pi-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and R(DS)(ON) ratings. Developed by Toshiba Corp., the new lineup addresses market requirements for AC/DC and ballast applications, achieved through use of the company's seventh generation pi-MOS process, a high level of cell integration and optimization of the cell design. The first 13 devices in the pi-MOS VII series include seven 500V and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as AC adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400V to 650V and provide a wide selection of electrical characteristics, including drain current, R(DS)(ON) and gate capacitance. "As a result of the optimization of the cell design, Toshiba has been able to reduce gate charge and capacitance without losing low R(DS)(ON) characteristics," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC. Compared to the company's previous generation pi-MOS VI MOSFETs, total gate charge has been reduced approximately 40 percent, output capacitance has been reduced 25 percent, reverse transfer capacitance has been reduced 60 percent and input capacitance has been reduced 10 percent(1). The first seven 500V devices in the pi-MOS VII series provide a selection of drain current from 5 Amp (A) to 15A (max.), with a range of R(DS)(ON), gate charge and avalanche energy to meet various application requirements. (Please see specification tables below.) The TK5A50D features drain current of 5A and R(DS)(ON) of 1.5omega (max.); the 7A TK7A50D has R(DS)(ON) of 1.22omega (max.); the 8A TK8A50D has R(DS)(ON) of 0.85omega (max.); the 10A TK10A50D has R(DS)(ON) of 0.72omega (max.); the 12A TK12A50D has R(DS)(ON) of 0.52omega(max.); the 13A TK13A50D has R(DS)(ON) of 0.47omega (max.); and the 15A TK15A50D has R(DS)(ON) of 0.3omega (max.). These devices are packaged in Toshiba TO-220SIS packages, which are equivalent to industry standard TO-220F (isolated) packages, with dimensions of 10.0mm x 4.5mm x 17.8mm. The initial pi-MOS VII series includes six 600V devices with drain current ranging from 3.5A to 13A (max.). A 3.5A device, the TK4A60DA, has R(DS)(ON) of 2.2omega (max.); the 6A TK6A60D has R(DS)(ON) of 1.25omega (max.); the 7.5A TK8A60DA has R(DS)(ON) of 1.0omega (max.); the 10A TK10A60D has R(DS)(ON) of 0.75omega (max.), the 11A TK11A60D has R(DS)(ON) of 0.65omega (max.); and the 13A TK13A60D has R(DS)(ON) of 0.43omega (max.). Pricing and Availability The new Toshiba pi-MOS VII high-voltage MOSFETs are available now. Prices in sample quantities start at $0.75. Specifications for Toshiba Pi MOS 500V and 600V MOSFETs for AC-DC Power Supplies and Ballasts Part Drain-Source Drain Drain-source Gate Number Voltage Current ON resistance Charge, V(DSS) I(D) R(DS)(ON) Q(g) (max.) (max.) (max.)(2) (typ.)(3) TK5A50D 500V 5A 1.5omega 11nC TK7A50D 500V 7A 1.22omega 12nC TK8A50D 500V 8A 0.85omega 16nC TK10A50D 500V 10A 0.72omega 20nC TK12A50D 500V 12A 0.52omega 25nC TK13A50DA 500V 12.5A 0.47omega 28nC TK15A50D 500V 15A 0.3omega 40nC TK4A60DA 600V 3.5A 2.2omega 11nC TK6A60D 600V 6A 1.25omega 16nC TK8A60DA 600V 7.5A 1.0omega 20nC TK10A60D 600V 10A 0.75omega 25nC TK11A60D 600V 11A 0.65omega 28nC TK13A60D 600V 13A 0.43omega 40nC Specifications for Toshiba Pi MOS 500V and 600V MOSFETs for AC-DC Power Supplies and Ballasts (cont.) Part Avalanche Avalanche Package Package Number Energy Energy Toshiba Industry Single Repetitive(5) Package/ Standard Pulse(4) Dimensions Equivalent (mm) TO-220SIS TO-220F TK5A50D 150mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK7A50D 129mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK8A50D 165mJ 4.0mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK10A50D 264mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK12A50D 364mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK13A50DA 416mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK15A50D 542mJ 5.0mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK4A60DA 158mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK6A60D 173mJ 4.0mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK8A60DA 270mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK10A60D 363mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK11A60D 396mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated) TO-220SIS TO-220F TK13A60D 511mJ 5.0mJ 10 x 4.5 x 17.8 (Isolated) Toshiba's Discrete Products Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: "Preliminary 2008 Worldwide Semiconductor Market Share Report," Gartner, December 2008). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers, LMOS logic, CMOS logic, photocouplers, TOSLINKs, LEDs, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets. *About TAEC and Toshiba Corp. Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more. Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, Preliminary 2008 WW Semiconductor Revenue, Dec. 2008). For additional company and product information, please visit http://www.toshiba.com/taec/. Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at http://www.chips.toshiba.com, or from your TAEC representative. (1)Based on specifications from datasheets for pi-MOS VII TK10A60D and pi-MOS VI 2SK3569 (2)V(GS) = 10V, I(D) = 1.8A (3.5A devices), 2.5A (5A devices), 3A (6A devices), 4A (7.5A and 8A devices), 5A (10A devices), 5.5A (11A devices), 6A (12A devices), 6.3A (12.5A devices), 6.5A (13A devices), 7.5A (15A devices). (3) V(DD) = 400 V, V(GS) = 10V, I(D) = 3.5A (3.5A devices), 5A (5A devices), 6A (6A devices), 7A (7A devices), 7.5A (7.5A devices), 8A (8A devices), 10A (10A devices), 11A (11A devices), 12A (12A devices), 12.5A (12.5A devices), 13A (13A devices), 15A (15A devices) (4)V(DD) = 90V, T(ch) = 25degrees C (initial), R(G) = 25omega, L = 22.5 mH, IAR = 3.5 A (3.5A devices) L = 10.2 mH, IAR = 5 A (5A devices) L = 8.4 mH, IAR = 6 A (6A devices) L = 8.4 mH, IAR = 7.5 A (7.5A devices) L = 4.4 mH, IAR = 8 A (8A devices) L = 6.36 mH, IAR = 10 A (10A devices) L = 5.73 mH, IAR = 11 A (11A devices) L = 4.3 mH, IAR = 12 A (12A devices) L = 4.53 mH, IAR = 12.5 A (12.5A devices) L = 5.3 mH, IAR = 13 A (13A devices) L = 4.1 mH, IAR = 15 A (15A devices) (5)Repetitive rating: pulse width limited by maximum channel temperature. SOURCE Toshiba America Electronic Components, Inc. http://www.toshiba.com/taec |