Samsung Introduces 40-nanometer 32 Gb NAND Flash Device

By Niladri Sekhar Nath

TMCnet Contributing Editor

 

Samsung Electronics Co., Ltd. has reportedly developed 40-nanometer (nm) memory device. The company claims that the 32 Gigabit (Gb) NAND flash device is the first memory to integrate a Charge Trap Flash (CTF) architecture.

The CTF-based NAND flash memory is capable of enhancing the reliability of the memory by decreasing inter-cell noise levels. Plus it has superior scalability.

According to a press release, the memory has a control gate in the CTF that is only 20 percent as large as a conventional control gate in a floating gate structure. Here the data is temporarily placed in a “holding chamber” of the non-conductive layer of the flash memory composed of silicon nitride (SiN). This leads to a higher level of reliability and better control of the storage current.


Samsung (News - Alert) says the 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours).

The CTF design is based TANOS structure. Samsung designed the TANOS CTF architecture after extensive research at its Semiconductor R&D department.

The 32Gb NAND flash device signals the arrival of seventh generation of NAND flash memory, feel the experts.

For more information, visit www.samsung.com.

--------

Niladri Sekhar Nath is a contributing writer for TMCnet covering telecommunications, service providers and networking.