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Wolfspeed CGHV40100 GaN-on-Silicon HEMT Chip and Module Fabrication Process Overview - Research and MarketsResearch and Markets has announced the addition of the "Wolfspeed CGHV40100 GaN-on-Silicon HEMT: Chip and Module Fabrication Process Overview" report to their offering. Wolfspeed (Infineon) offers a broad range of GaN RF products that are in high demand throughout the energy, electronics, industrial, transportation, and military telecommunications sectors. The company's new CGHV40100 is a unique gallium-nitride (GaN) high-electron-mobility transistor operating from a 50-volt rail and up to 3-GHz. The CGHV40100 includes a single GaN-on-SiC HEMT die with n area of 4.17mm2. To make the source connection, the device is manufactured on ultra-thin wafer with gold vias. The HEMT shows the typical GaN epitaxy structure for lateral device and a source-connected field plate. The device is assembled in a SOT467C package with ceramic substrate materials that possess an excellent combination of electrical, mechanical, and thermal properties. The flange material is CuMoCu heatsink, which has good mechanical properties but is quite expensive. Very specific and optimized choices went into the device's design and manufacturing, resulting in a competitive, stunning product. This report also includes complete chip and module fabrication process overviews, and an estimated cost. For more information about this report visit https://www.researchandmarkets.com/research/bhv2mp/wolfspeedcghv40100
View source version on businesswire.com: http://www.businesswire.com/news/home/20170627006301/en/ |
