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Global Next Generation Memory Market to Grow at a CAGR of 66.63% by 2021: Growing Emergence of New FeRAM Design Using CMOS Processes - Research and Markets

[April 25, 2017]

Global Next Generation Memory Market to Grow at a CAGR of 66.63% by 2021: Growing Emergence of New FeRAM Design Using CMOS Processes - Research and Markets

Research and Markets has announced the addition of the "Global Next Generation Memory Market 2017-2021" report to their offering.

The global next generation memory market to grow at a CAGR of 66.63% during the period 2017-2021.

The report, Global Next Generation Memory Market 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

One trend in market is growing emergence of new FeRAM design using CMOS processes. Researchers have designed flexible FeRAM devices using state-of-the-art CMOS processes that involve sputtering, photolithography, and reactive ion etching. Their research led to a reduction in the gap between a rigid, inflexible semiconductor, which has high integration density, performnce, and yield, and highly flexible polymer/hybrid materials that are low-performance electronics. To reduce the thickness of traditional silicon wafers and make electronics flexible, researchers used the existing standard CMOS fabrication processes.

Key vendors