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VisIC Technologies Launches New 1200 Voltage GaN Devices Family for Efficient, High-Speed Switching with Integral ISO-DRIVERNES ZIONA, Israel and MILWAUKE, Sept. 18, 2016 /PRNewswire/ -- VisIC Technologies, a leader in enabling cost effective, high efficiency energy conversion systems, is announcing a new family of high-voltage GaN devices for switching power electronics designs. With 1200V ratings, the GaN module have typical on resistance (RDS(ON)) ratings down to just 0.04O. Target applications are power converters for motor drives, three phase power supplies and other applications requiring current switching up to 50A (current limit at the first line of products). "These low loss GaN devices are setting new industry standards for performance and are based on the VisIC ALL Switch second generation HEMT technology, which combines high levels of cell integration with optimized cell design," said Gregory Bunin, CTO, VisIC. "This technology supports reduced gate charge and capacitances without losing the benefits of low RDS(ON), with our GaNs offering an ultra-low maximm switching energy down to 140 µJ." Switching losses are three to five times lower compared to SIC MOSFETs counterparts. Isolated Gate Driver is integrated in an isolated DIP power package. These GaN devices represent high-voltage supplements to VisIC's existing ALL Switch line-up of 650V GaN devices and supplied to selected customers. The new GaN devices, along with other VisIC solutions will be on display and available for demo at the IEEE Energy Conversion Congress and Exposition (ECCE2016), being held in Milwaukie from Sept. 18-22, www.ieee-ecce.org. About VisIC Technologies
To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/visic-technologies-launches-new-1200-voltage-gan-devices-family-for-efficient-high-speed-switching-with-integral-iso-driver-300329753.html SOURCE VisIC Technologies |