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Efficient Power Conversion (EPC) Introduces Monolithic Gallium Nitride Power Transistor Half Bridge Enabling Over 87% System Efficiency for a 28 V to 1 V Point of Load Converter at 14 A OutputEL SEGUNDO, Calif. --(Business Wire)-- EPC announces the EPC2101, 60 V enhancement-mode monolithic GaN transistor half bridge. By integrating two eGaN® power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50% reduction in board area occupied by the transistors. This increases both efficiency (especially at higher frequencies) and power density, while reducing assembly costs to the end user's power conversion system. The EPC2101 is ideal for high frequency DC-DC conversion. Each device within the EPC2101 half-bridge component has a voltage rating of 60 V. The upper FET has a typical RDS(on) of 8.4 m?, and the lower FET has a typical RDS(on) of 2 m?. The high-side FET is approximately one-fourth the size of the low-side device to optimize efficient DC-DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2101 comes in a chip-scale package for improved switching speed and thermal performance, and is only 6.05 mm x 2.3 mm for increased power density. Development Board The EPC9037 is 2" x 1.5" and contains one < rel="nofollow" href="http://cts.businesswire.com/ct/CT?id=smartlink&url=http%3A%2F%2Fepc-co.com%2Fepc%2FProducts%2FeGaNFETs%2FEPC2101.aspx%3Futm_source%3DEPC2101%26utm_medium%3DPR%26utm_content%3DEPC2101%26utm_campaign%3DEPC2101PR&esheet=50986131&newsitemid=20141118005279&lan=en-US&anchor=EPC2101&index=8&md5=78097537a36b276322e901fa6cb2396f" rel="nofollow">EPC2101 integrated half-bridge component using the Texas Instruments (News - Alert) LM5113 gate driver, supply and bypass capacitors. The board has been laid out for optimal switching performance and there are various probe points to facilitate simple waveform measurement and efficiency calculation. Price and Availability The EPC2101 monolithic half-bridge price for 1K units is $6.92 each The EPC9037 development boards are priced at $137.75 each Both are available for immediate delivery from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en Design Information and Support for eGaN FETs:
About EPC EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.
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