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STMicroelectronics Assigned Patent for Semiconductor Device Including Outwardly Extending Source and Drain Silicide Contact Regions and Related...(Targeted News Service Via Acquire Media NewsEdge) STMicroelectronics Assigned Patent for Semiconductor Device Including Outwardly Extending Source and Drain Silicide Contact Regions and Related Methods By Targeted News Service ALEXANDRIA, Va., Nov. 11 -- STMicroelectronics, Coppell, Texas, and Globalfoundries, Grand Cayman, Cayman Island, have been assigned a patent (8,878,300) developed by Qing Liu, Guilderland, New York, and Ruilong Xie, Schenectady, New York, for a "semiconductor device including outwardly extending source and drain silicide contact regions and related methods." The patent application was filed on Sept. 18, 2013 (14/030,048). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,878,300.PN.&OS=PN/8,878,300&RS=PN/8,878,300 Written by Sudarshan Harpal; edited by Jaya Anand. SH1111JA1111-1077823 (c) 2014 Targeted News Service |