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Freescale Semiconductor Assigned Patent for Non-volatile Memory (NVM) Cell, High Voltage Transistor, and High-K and Metal Gate Transistor Integration(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Nov. 11 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,877,585) developed by Asanga H. Perera, West Lake Hills, Texas, Cheong Min Hong, Austin, Texas, and Sung-Taeg Kang, Austin, Texas, for a "non-volatile memory (NVM) cell, high voltage transistor, and high-K and metal gate transistor integration." The patent application was filed on Aug. 16, 2013 (13/969,180). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,877,585.PN.&OS=PN/8,877,585&RS=PN/8,877,585 Written by Sudarshan Harpal; edited by Jaya Anand. SH1111JA1111-1077903 (c) 2014 Targeted News Service |