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Dow Corning Assigned Patent for High Voltage Power Semiconductor Devices on SiC
[October 16, 2014]

Dow Corning Assigned Patent for High Voltage Power Semiconductor Devices on SiC


(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Oct. 16 -- Dow Corning, Midland, Michigan, has been assigned a patent (8,860,040) developed by Mark Loboda, Bay City, Michigan, and Gilyong Chung, Midland, Michigan, for "high voltage power semiconductor devices on SiC." The patent application was filed on Aug. 6, 2013 (13/959,855). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=88,60,040.PN.&OS=PN/88,60,040&RS=PN/88,60,040 Written by Balkishan Dalai; edited by Jaya Anand.



BD1016JA1016-1069388 (c) 2014 Targeted News Service

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