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U.S. Patents Awarded to Inventors in New York (May 24)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., May 24 -- The following federal patents were awarded to inventors in New York. *** Hewlett-Packard Development Assigned Patent ALEXANDRIA, Va., May 24 -- Hewlett-Packard Development, Houston, has been assigned a patent (8,446,494) developed by Matthew D. Gaubatz, Ithaca, N.Y., and Robert Alan Ulichney, Marlborough, Mass., for an "automatic redeye detection based on redeye and facial metric values." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Candidate redeye areas (24) are determined in an input image (20). In this process, a respective set of one or more redeye metric values (28) is associated with each of the candidate redeye areas (24). Candidate face areas (30) are ascertained in the input image (20). In this process, a respective set of one or more face metric values (34) is associated with each of the candidate face areas (30). A respective joint metric vector (78) is assigned to each of the candidate redeye areas (24). The joint metric vector (78) includes metric values that are derived from the respective set of redeye metric values (28) and the set of face metric values (34) associated with a selected one of the candidate face areas (30). Each of one or more of the candidate redeye areas (24) is classified as either a redeye artifact or a non-redeye artifact based on the respective joint metric vector (78) assigned to the candidate redeye area (24)." The patent application was filed on Feb. 1, 2008 (12/865,855). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,446,494&OS=8,446,494&RS=8,446,494 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Intellectual Ventures Fund 83 Assigned Patent ALEXANDRIA, Va., May 24 -- Intellectual Ventures Fund 83, Las Vegas, has been assigned a patent (8,446,490) developed by Aaron T. Deever, Pittsford, N.Y., for a "video capture system producing a video summary." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A digital video capture system for capturing a digital video sequence and for producing a corresponding video summary, comprising: an image sensor; an optical system; a processor, a softcopy display and a means for providing a user with an option to view either a stored digital video sequence or a video summary on the softcopy display. The processor performs the steps of: capturing a digital video sequence; automatically analyzing the digital video sequence at the time the digital video sequence is captured to determine one or more feature values; compressing the digital video sequence; storing the compressed digital video sequence; automatically analyzing the feature values to identify one or more key video snippets, assembling the key video snippets to form a video summary; and storing a representation of the video summary." The patent application was filed on May 25, 2010 (12/786,501). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,446,490&OS=8,446,490&RS=8,446,490 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Cornell Research Foundation Assigned Patent ALEXANDRIA, Va., May 24 -- Cornell Research Foundation, Ithaca, N.Y., has been assigned a patent (8,445,655) developed by four co-inventors for "functional nucleic acid ligands to fluorescent proteins." The co-inventors are Michael Kotlikoff, Ithaca, N.Y., John T. Lis, Ithaca, N.Y., Bo Shui, Ithaca, N.Y., and Hua Shi, Ithaca, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention relates to a nucleic acid aptamer having a first domain that binds to a fluorescent protein. The nucleic acid aptamer forms a molecular complex whereby the aptamer binds a fluorescent protein at the first domain. A constructed DNA molecule, expression systems, and host cells containing the molecular complex are also disclosed. The invention also relates to a system containing a first DNA molecule encoding the nucleic acid aptamer of the present invention and a second DNA molecule encoding a fluorescent protein capable of being bound by the first domain. Methods of detecting a molecular target and determining location of a molecular target using the nucleic acid aptamer of the invention are also disclosed." The patent application was filed on June 18, 2007 (12/305,102). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,655.PN.&OS=PN/84,45,655&RS=PN/84,45,655 Written by Amal Ahmed; edited by Jaya Anand. *** University of California, Northwestern University Assigned Patent ALEXANDRIA, Va., May 24 -- The University of California, Oakland, Calif., and Northwestern University, Evanston, Ill., have been assigned a patent (8,445,632) developed by seven co-inventors for "selective poly-N-substituted glycine antibiotics." The co-inventors are Annelise E. Barron, Palo Alto, Calif., Ann M. Czyzewski, Grayslake, Ill., Michelle T. Dohm, Palos Park, Ill., Tyler M. Miller, Aurora, Colo., Ronald N. Zuckermann, El Cerrito, Calif., James A. Patch, Cornwall-on-Hudson, N.Y., and Nathaniel P. Chongsiriwatana, Albuquerque, N.M. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Antimicrobial peptoid compounds and related compositions as can be used against bacteria effectively and selectively." The patent application was filed on Feb. 9, 2009 (12/378,034). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,632.PN.&OS=PN/84,45,632&RS=PN/84,45,632 Written by Amal Ahmed; edited by Jaya Anand. *** Tyrx Assigned Patent ALEXANDRIA, Va., May 24 -- Tyrx, Monmouth Junction, N.J., has been assigned a patent (8,445,603) developed by five co-inventors for "linear polyesteramides from aminophenolic esters." The co-inventors are Arthur Schwartz, East Windsor, N.J., Satish Pulapura, Bridgewater, N.J., Sarita Nethula, Somerset, N.J., Archana Rajaram, Monmouth Junction, N.J., and Arikha Moses, New York. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to linear, biodegradable polyesteramide (PEA) polymers synthesized with repeating units derived from aminophenol esters and diacids. These PEAs have a monomer repeat represented by ##STR00001## as well as a variety of uses to coat, form or comprise medical devices, combination medical devices and pharmaceutical compositions, including sustained release formulations." The patent application was filed on Sept. 22, 2009 (12/564,736). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,603.PN.&OS=PN/84,45,603&RS=PN/84,45,603 Written by Amal Ahmed; edited by Jaya Anand. *** Florelle Assigned Patent ALEXANDRIA, Va., May 24 -- Florelle, New York, has been assigned a patent (8,446,407) developed by Kenneth Banschick, Port Washington, N.Y., and Andrei Gurulev, Brooklyn, N.Y., for a "system and method for parametric display of modular aesthetic designs." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A system and method for the aesthetic design of a modular assemblage, comprising means for providing a client graphic user interface for receiving an input for defining parameters of the modular assemblage, and for presenting an image of the defined modular assemblage; communicating a code to a server representing the defined parameters; at the server, in dependence on the communicated code, defining a set of graphic elements corresponding to the defined modular assemblage; communicating the graphic elements from the server to the client; and displaying, at the client, the graphic elements received from the server to represent the defined modular assemblage." The patent application was filed on July 2, 2012 (13/540,595). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,446,407&OS=8,446,407&RS=8,446,407 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Enzo Diagnostics Assigned Patent ALEXANDRIA, Va., May 24 -- Enzo Diagnostics, Farmingdale, N.Y., has been assigned a patent (8,445,664) developed by five co-inventors for "kits for amplifying and detecting nucleic acid sequences." The co-inventors are Elazar Rabbani, New York, Jannis Stavrianopoulos, Bay Shore, N.Y., James J. Donegan, Long Beach, N.Y., Jack Coleman, East Northport, N.Y., and Marleen Walner, Farmingdale, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention provides novel processes for amplifying nucleic acid sequences of interest, including linear and non-linear amplification. In linear amplification, a single initial primer or nucleic acid construct is utilized to carry out the amplification process. In non-linear amplification, a first initial primer or nucleic acid construct is employed with a subsequent initial primer or nucleic acid construct. In other non-linear amplification processes provided by this invention, a first initial primer or nucleic acid construct is deployed with a second initial primer or nucleic acid construct to amplify the specific nucleic acid sequence of interest and its complement that are provided. A singular primer or a singular nucleic acid construct capable of non-linear amplification can also be used to carry out non-linear amplification in accordance with this invention. Post-termination labeling process for nucleic acid sequencing is also disclosed in this invention that is based upon the detection of tagged molecules that are covalently bound to chemically reactive groups provided for chain terminators. A process for producing nucleic acid sequences having decreased thermodynamic stability to complementary sequences is also provided and achieved by this invention. Unique nucleic acid polymers are also disclosed and provided in addition to other novel compositions, kits and the like." The patent application was filed on Oct. 20, 2005 (11/256,592). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,664.PN.&OS=PN/84,45,664&RS=PN/84,45,664 Written by Amal Ahmed; edited by Jaya Anand. *** Bristol-Myers Squibb, Albany Molecular Research Assigned Patent ALEXANDRIA, Va., May 24 -- Bristol-Myers Squibb, Princeton, N.J., and Albany Molecular Research, Albany, N.Y., have been assigned a patent (8,445,494) developed by four co-inventors for a "crystalline form of 6-[(4S)-2-methyl-4-(2-naphthyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]pyrida- zin-3-amine." The co-inventors are Jun Qiu, Kendall Park, N.J., Qi Gao, Franklin Park, N.J., Shuang Liu, Schenectady, N.Y., and Matthew Isherwood, Del Mar, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present disclosure generally relates to a crystalline form of 6-[(4S)-2-methyl-4-(naphthyl)-1,2,3,4-tetrahydroisoquinolin-7-yl]pyridazi- n-3-amine. The present disclosure also generally relates to pharmaceutical compositions comprising the crystalline form, as well of methods of using a crystalline form in the treatment of depression and other conditions and methods for obtaining such crystalline form." The patent application was filed on June 4, 2009 (12/995,771). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,494.PN.&OS=PN/84,45,494&RS=PN/84,45,494 Written by Amal Ahmed; edited by Jaya Anand. *** H. Lundbeck Assigned Patent ALEXANDRIA, Va., May 24 -- H. Lundbeck, Valby, Denmark, has been assigned a patent (8,440,837) developed by five co-inventors for a "2-substituted-ethynylthiazole derivatives and uses of same." The co-inventors are Allen Hopper, Katonah, N.Y., Anette Graven Sams, Vaerlose, Denmark, Gitte Kobberoee Mikkelsen, Ballerup, Denmark, Mathivanan Packiarajan, Saddle Brook, N.J., and Michel Grenon, Saddle Brook, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides 2-substituted-ethynylthiazole derivatives of formula (I): ##STR00001## wherein R.sup.1, R.sup.2 and X are as defined herein, or a pharmaceutically acceptable salt thereof; and pharmaceutical compositions and methods of using same." The patent application was filed on Oct. 20, 2010 (12/908,588). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,440,837.PN.&OS=PN/8,440,837&RS=PN/8,440,837 Written by Kusum Sangma; edited by Anand Kumar. *** Pass & Seymour Assigned Patent ALEXANDRIA, Va., May 24 -- Pass & Seymour, Syracuse, N.Y., has been assigned a patent (8,446,151) developed by four co-inventors for a protective device. The co-inventors are Dejan Radosavljevic, Lafayette, N.Y., Thomas N. Packard, Syracuse, N.Y., Bruce F. Macbeth, Syracuse, N.Y., and James P. Romano, Syracuse, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to an electrical wiring device that includes at least one user accessible input mechanism and a test assembly configured to initiate a self-test in response to stimulus signal. The self test determines whether a sensor, a fault detection circuit or a circuit interrupter assembly are in an operational mode or are in a failure mode, the reset stimulus being provided in the operational mode and a reset lockout stimulus being provided in the failure mode. The device also including a reset lockout mechanism coupled to the circuit interrupter assembly and the test assembly. The reset lockout mechanism is configured to disable the reset stimulus in response to the reset lockout stimulus if any one of the at least one sensor, at least one fault detection circuit, or circuit interrupter assembly is determined to be in the failure mode after a predetermined time elapses." The patent application was filed on Dec. 5, 2011 (13/311,224). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,446,151.PN.&OS=PN/8,446,151&RS=PN/8,446,151 Written by Kusum Sangma; edited by Anand Kumar. *** Wyeth Assigned Patent ALEXANDRIA, Va., May 24 -- Wyeth, Madison, N.J., has been assigned a patent (8,445,486) developed by fourteen co-inventors for "triazine compounds as PI3 kinase and mTOR inhibitors." The co-inventors are Aranapakam Mudumbai Venkatesan, Rego Park, N.Y., Zecheng Chen, New City, N.Y., Christoph Martin Dehnhardt, New York, Osvaldo Dos Santos, Astoria, N.Y., Efren Guillermo Delos Santos, Nanuet, N.Y., Arie Zask, New York, Jeroen Cunera Verheijen, Highland Mills, N.Y., Joshua Aaron Kaplan, Nyack, N.Y., David James Richard, Warwick, N.Y., Semiramis Ayral-Kaloustian, Tarrytown, N.Y., Tarek Suhayl Mansour, New City, N.Y., Ariamala Gopalsamy, Mahwah, N.J., Kevin Joseph Curran, Congers, N.Y., and Mengxiao Shi, Eastchester, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compounds of formula I ##STR00001## wherein: R.sup.1 is ##STR00002## and R.sup.2, R.sup.4, and R.sup.6-9 are defined herein, and pharmaceutically acceptable salts and esters thereof. These compounds inhibit PI3 kinase and mTOR, and may be used to treat diseases mediated by PI3 kinase and mTOR, such as a variety of cancers. Methods for making and using the compounds of this invention are disclosed. Various compositions containing the compounds of this invention are also disclosed." The patent application was filed on June 6, 2012 (13/490,309). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,486.PN.&OS=PN/84,45,486&RS=PN/84,45,486 Written by Amal Ahmed; edited by Jaya Anand. *** Wyeth Assigned Patent ALEXANDRIA, Va., May 24 -- Wyeth, Madison, N.Y., has been assigned a patent (8,445,496) developed by four co-inventors for "crystalline forms of 4-[(2,4-dichloro-5-methoxyphenyl)amino]-6-methoxy-7-[3-(4-methyl-1-pipera- zinyl)propoxy]-3-quinolinecarbonitrile and methods of preparing the same." The co-inventors are Marc Sadler Tesconi, Monroe, N.Y., Gregg Feigelson, Chester, N.Y., Henry Strong, Somerset, N.J., and Hong Wen, North Potomac, Md. The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention is directed to a crystalline 4-[(2,4-dichloro-5-methoxyphenyl)amino]-6-methoxy-7-[3-(4-methyl-1-pipera- zinyl)propoxy]-3-quinolinecarbonitrile monohydrate having an x-ray diffraction pattern wherein 2.theta. angles (.degree.) of significant peaks are at about: 9.19, 11.48, 14.32, 19.16, 19.45, 20.46, 21.29, 22.33, 23.96, 24.95, 25.29, 25.84, 26.55, 27.61, and 29.51, and a transition temperature of about 109.degree. C. to about 115.degree. C." The patent application was filed on June 22, 2010 (12/820,306). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,496.PN.&OS=PN/84,45,496&RS=PN/84,45,496 Written by Amal Ahmed; edited by Jaya Anand. *** Merck Sharp & Dohme Assigned Patent ALEXANDRIA, Va., May 24 -- Merck Sharp & Dohme, Rahway, N.J., has been assigned a patent (8,445,538) developed by five co-inventors for "glucagon receptor antagonist compounds." The co-inventors are Songnian Lin, Monroe, N.J., Xibin Liao, Edison, N.J., Roman Kats-Kagan, Brooklyn, N.Y., John E. Stelmach, Westfield, N.J., and Emma R. Parmee, Scotch Plains, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Glucagon receptor antagonist compounds are disclosed. The compounds are useful for treating type 2 diabetes and related conditions. Pharmaceutical compositions and methods of treatment are also included." The patent application was filed on Dec. 9, 2009 (13/140,260). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,538.PN.&OS=PN/84,45,538&RS=PN/84,45,538 Written by Amal Ahmed; edited by Jaya Anand. *** Cornell Research Foundation Assigned Patent ALEXANDRIA, Va., May 24 -- Cornell Research Foundation, Ithaca, N.Y., has been assigned a patent (8,445,533) developed by Rui Hai Liu, Ithaca, N.Y., James R. Jacob, Cortland, N.Y., and Bud Tennant, Ithaca, N.Y., for "andrographolide derivatives to treat viral infections." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides a methods and compositions for treating a host afflicted with a viral infection, particularly a Flaviviridae infection, including hepatitis C infection, comprising administering an effective antiviral amount of a derivative of andrographolide alone or in combination or alternation with another antiviral compound." The patent application was filed on Nov. 8, 2005 (11/269,942). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,533.PN.&OS=PN/84,45,533&RS=PN/84,45,533 Written by Amal Ahmed; edited by Jaya Anand. *** OSI Pharmaceuticals Assigned Patent ALEXANDRIA, Va., May 24 -- OSI Pharmaceuticals, Farmingdale, N.Y., has been assigned a patent (8,445,510) developed by seven co-inventors for "fused bicyclic kinase inhibitors." The co-inventors are Mark J. Mulvihill, Melville, N.Y., Arno G. Steinig, East Northport, N.Y., Andrew Philip Crew, North Babylon, N.Y., Meizhong Jin, Dix Hills, N.Y., Andrew Kleinberg, East Meadow, N.Y., An-Hu Li, Commack, N.Y., and Jing Wang, Syosset, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compounds of Formula I, as shown below and defined herein: ##STR00001## pharmaceutically acceptable salts thereof, synthesis, intermediates, formulations, and methods of disease treatment therewith, including treatment of cancers, such as tumors driven at least in part by at least one of RON, MET or ALK. This Abstract is not limiting of the invention." The patent application was filed on May 16, 2011 (13/108,024). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,510.PN.&OS=PN/84,45,510&RS=PN/84,45,510 Written by Amal Ahmed; edited by Jaya Anand. *** Lockheed Martin Assigned Patent ALEXANDRIA, Va., May 24 -- Lockheed Martin, Bethesda, Md., has been assigned a patent (8,446,326) developed by Byron W. Tietjen, Baldwinsville, N.Y., for a "foldable antenna for reconfigurable radar system." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention provides for phased array radar system that mechanically reconfigures its antenna array from a single faced aperture into two geometrically opposed arrays." The patent application was filed on April 25, 2008 (12/109,874). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,446,326&OS=8,446,326&RS=8,446,326 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Merck Sharp & Dohme Assigned Patent ALEXANDRIA, Va., May 24 -- Merck Sharp & Dohme, Rahway, N.J., has been assigned a patent (8,445,499) developed by six co-inventors for "bipiperidinyl compounds, compositions, containing such compounds and methods of treatment." The co-inventors are Harold B. Wood, Westfield, N.J., Alan D. Adams, Holland, N.Y., Stanley Freeman, Plainsboro, N.J., Jason W. Szewczyk, New York, Conrad Santini, Lawrence, Kan., and Yong Huang, West Windsor, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Bipiperidinyl compounds of the formula: ##STR00001## are disclosed as useful for treating or preventing type 2 diabetes and similar conditions. Pharmaceutically acceptable salts and solvates are included as well. The compounds are useful as agonists of the g-protein coupled receptor GPR-119." The patent application was filed on March 21, 2012 (13/426,418). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,499.PN.&OS=PN/84,45,499&RS=PN/84,45,499 Written by Amal Ahmed; edited by Jaya Anand. *** University of California Assigned Patent ALEXANDRIA, Va., May 24 -- The University of California, Oakland, Calif., has been assigned a patent (8,445,507) developed by five co-inventors for an "androgen receptor modulator for the treatment of prostate cancer and androgen receptor-associated diseases." The co-inventors are Michael E. Jung, Los Angeles, Charles L. Sawyers, New York, Samedy Ouk, Los Angeles, Chris Tran, New York, and John Wongvipat, New York. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A hydantoin compound useful for the prevention or treatment of hyperproliferative diseases or disorders." The patent application was filed on March 27, 2007 (12/294,881). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,45,507.PN.&OS=PN/84,45,507&RS=PN/84,45,507 Written by Amal Ahmed; edited by Jaya Anand. *** Boeing Assigned Patent for High Performance Actuator Motor ALEXANDRIA, Va., May 24 -- Boeing, Chicago, has been assigned a patent (8,446,121) developed by five co-inventors for a "high performance actuator motor." The co-inventors are Leila Parsa, Green Island, N.Y., Jeffery M. Roach, Saint Charles, Mo., Kamiar J. Karimi, Kirkland, Wash., Shengyi Liu, Sammamish, Wash., and Suman Dwari, Manchester, Conn. The abstract of the patent published by the U.S. Patent and Trademark Office states: "An actuator motor described herein has fast dynamic response capability, high torque density, high efficiency, and improved thermal and mechanical stability at high speed while minimizing weight. According to one aspect of the disclosure provided herein, an actuator motor has a rotor shaft with an array of permanent magnets attached according to a Halbach array configuration. A stator includes windings that induce a torque on the rotor shaft when rotating magnetic fields interact with the optimized magnetic flux distributions of the magnets of the Halbach array. According to various embodiments, the rotor shaft is hollow, reducing weight and rotational inertia, while improving ambient cooling characteristics of the motor." The patent application was filed on Feb. 10, 2011 (13/025,033). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,446,121.PN.&OS=PN/8,446,121&RS=PN/8,446,121 Written by Kusum Sangma; edited by Anand Kumar. *** Pass & Seymour Assigned Patent ALEXANDRIA, Va., May 24 -- Pass & Seymour, Syracuse, N.Y., has been assigned a patent (8,446,234) developed by six co-inventors for a "protection device with a sandwiched cantilever breaker mechanism." The co-inventors are Richard Weeks, Little York, N.Y., Kent R. Morgan, Groton, N.Y., Jeffrey C. Richards, Baldwinsville, N.Y., David A. Finlay Sr., Marietta, N.Y., Patrick J. Murphy, Marcellus, N.Y., and Gerald R. Savicki Jr., Canastota, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to a protective electrical wiring device that includes a circuit assembly that has a fault detection circuit coupled to the plurality of line terminals, the fault detection circuit being configured to detect perturbations corresponding to a fault condition or a simulated fault condition, the fault detection circuit being configured to provide a fault detection signal in response to detecting the perturbations corresponding to the fault condition or the simulated fault condition. An interrupting contact assembly is coupled to the fault detection circuit, the interrupting contact assembly including a contact assembly configured to provide electrical continuity between the plurality of line terminals, the plurality of feed-through load terminals, and the plurality of receptacle load terminals in a reset state, and interrupt the electrical continuity in a tripped state in response to the fault detection signal." The patent application was filed on Jan. 23, 2012 (13/355,648). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,446,234&OS=8,446,234&RS=8,446,234 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Field Effect Transistor Device with Raised Active Regions ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,971) developed by four co-inventors for a "field effect transistor device with raised active regions." The co-inventors are Kangguo Cheng, Schenectady, N.Y., Bruce B. Doris, Brewster, N.Y., Ali Khakifirooz, Mountain View, Calif., and Alexander Reznicek, Troy, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for fabricating a field effect transistor device includes forming a gate stack on a substrate, forming a spacer on the substrate, adjacent to the gate stack, forming a first portion of an active region on the substrate, the first portion of the active region having a first facet surface adjacent to the gate stack, forming a second portion of the active region on a portion of the first portion of the active region, the second portion of the active region having a second facet surface adjacent to the gate stack, the first facet surface and the second facet surface partially defining a cavity adjacent to the gate stack." The patent application was filed on Sept. 20, 2011 (13/237,319). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,971.PN.&OS=PN/8,445,971&RS=PN/8,445,971 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Integrated Circuit Interconnect Structure ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,446,014) developed by four co-inventors for an "integrated circuit interconnect structure." The co-inventors are Hanyi Ding, Colchester, Vt., Ronald G. Filippi, Wappingers Falls, N.Y., Jong-Ru Guo, Fishkill, N.Y., and Ping-Chuan Wang, Hopewell Junction, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "An integrated circuit (IC) interconnect structure that includes a first via positioned in a dielectric and coupled to a high current device at one end, and a buffer metal segment positioned in a dielectric and coupled to the first via at an opposite end thereof. The buffer metal segment includes a plurality of electrically insulating inter-dielectric (ILD) pads forming an ILD cheesing pattern thereon, to direct current. The IC interconnect structure further includes a second via positioned in a dielectric formed over the buffer metal segment and coupled to the buffer metal segment at one end and a metal power line formed in a dielectric and coupled to the second via at an opposite end thereof. The use of the ILD pads on the buffer metal segment enables a more even distribution of current along the metal power line." The patent application was filed on June 22, 2012 (13/531,008). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,446,014.PN.&OS=PN/8,446,014&RS=PN/8,446,014 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Gate Patterning of Nano-channel Devices ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,948) developed by seven co-inventors for a "gate patterning of nano-channel devices." The co-inventors are Nicholas C.M. Fuller, North Hills, N.Y., Sarunya Bangsaruntip, Mount Kisco, N.Y., Guy Cohen, Mohegan Lake, N.Y., Sebastian U. Engelmann, White Plains, N.Y., Lidija Sekaric, Mount Kisco, N.Y., Qingyun Yang, Poughkeepsie, N.Y., and Ying Zhang, Yorktown Heights, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the diameter of the gate nano-channel is employed and is deposited after patterning the gate conductor down to the gate dielectric. The residue gate material that is beneath the nano-channel is removed utilizing a medium to high density, bias-free, fluorine-containing or fluorine-and chlorine-containing isotropic etch process without compromising the integrity of the gate. In another embodiment, an encapsulation/passivation layer is utilized. In yet further embodiment, no sacrificial spacer or encapsulation/passivation layer is used and gate etching is performed in an oxygen and nitrogen-free ambient." The patent application was filed on Sept. 20, 2010 (12/886,139). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,948.PN.&OS=PN/8,445,948&RS=PN/8,445,948 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Structures and Methods to Reduce Maximum Current Density in a Solder Ball ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,446,006) developed by 12 co-inventors for "structures and methods to reduce maximum current density in a solder ball." The co-inventors are Raschid J. Bezama, Mahopac, N.Y., Timothy H. Daubenspeck, Colchester, Vt., Gary LaFontant, Elmont, N.Y., Ian D. Melville, Highland, N.Y., Ekta Misra, Fishkill, N.Y., George J. Scott, Wappingers Falls, N.Y., Krystyna W. Semkow, Poughquag, N.Y., Timothy D. Sullivan, Underhill, Vt., Robin A. Susko, Owego, N.Y., Thomas A. Wassick, LaGrangeville, N.Y., Xiaojin Wei, Poughkeepsie, N.Y., and Steven L. Wright, Cortlandt Manor, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Structures and methods to reduce maximum current density in a solder ball are disclosed. A method includes forming a contact pad in a last wiring level and forming a plurality of wires of the contact pad extending from side edges of the contact pad to respective ones of a plurality of vias. Each one of the plurality of wires has substantially the same electrical resistance." The patent application was filed on Dec. 17, 2009 (12/640,752). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,446,006.PN.&OS=PN/8,446,006&RS=PN/8,446,006 Written by Kusum Sangma; edited by Anand Kumar. *** Wabtec Holding Assigned Patent ALEXANDRIA, Va., May 24 -- Wabtec Holding, Wilmerding, Pa., has been assigned a patent (8,446,062) developed by Leo A. Eger, Murrysville, Pa., and John Parslow, Scotia, N.Y., for a brush holder assemblies. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Brush holder assemblies are detailed. The assemblies may employ rails, rather than boxes, for supporting brushes. They additionally may extend along all, or substantially all, of the lengths of the brushes for enhanced support of the brushes." The patent application was filed on Oct. 12, 2011 (13/271,329). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,446,062.PN.&OS=PN/8,446,062&RS=PN/8,446,062 Written by Kusum Sangma; edited by Anand Kumar. *** Advanced Micro Devices Assigned Patent ALEXANDRIA, Va., May 24 -- Advanced Micro Devices, Sunnyvale, Calif., has been assigned a patent (8,445,975) developed by James Pan, Hopewell Junction, N.Y., and John Pellerin, Hopewell Junction, N.Y., for a "replacement metal gate transistors with reduced gate oxide leakage." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device has a substrate, a gate dielectric layer, and a metal gate electrode on the gate dielectric layer. The gate dielectric layer includes an oxide layer having a dielectric constant (k) greater than 4, and silicon concentrated at interfaces of the oxide layer with the substrate and with the metal gate electrode. A method of fabricating a semiconductor device includes forming a removable gate over a substrate with a gate dielectric layer between the removable gate and the substrate, forming a dielectric layer over the substrate and exposing an upper surface of the removable gate, removing the removable gate leaving an opening in the dielectric layer, forming a protective layer on the gate dielectric layer and lining the opening, and forming a metal gate electrode in the opening. The protective layer has a graded composition between the gate dielectric layer and the metal gate electrode." The patent application was filed on Nov. 7, 2011 (13/290,275). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,975.PN.&OS=PN/8,445,975&RS=PN/8,445,975 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Asymmetric FET Including Sloped Threshold Voltage Adjusting Material Layer and Method of Fabricating Same ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,974) developed by five co-inventors for an "asymmetric FET including sloped threshold voltage adjusting material layer and method of fabricating same." The co-inventors are Dureseti Chidambarrao, Hopewell Junction, N.Y., Sunfei Fang, Hopewell Junction, N.Y., Yue Liang, Hopewell Junction, N.Y., Xiaojun Yu, Hopewell Junction, N.Y., and Jun Yuan, Hopewell Junction, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor structure is provided that includes at least one asymmetric gate stack located on a surface of a semiconductor structure. The at least one asymmetric gate stack includes, from bottom to top, a high k gate dielectric, a sloped threshold voltage adjusting material layer and a gate conductor. A method of forming such a semiconductor structure is also provided in which a line of sight deposition process is used in forming the sloped threshold voltage adjusting material layer in which the deposition is tilted within respect to a horizontal surface of a semiconductor structure." The patent application was filed on Jan. 7, 2010 (12/683,602). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,974.PN.&OS=PN/8,445,974&RS=PN/8,445,974 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for p-FET with a Strained Nanowire Channel and Embedded SiGe source and Drain Stressors ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,892) developed by Guy Cohen, Mohegan Lake, N.Y., Conal E. Murray, Yorktown Heights, N.Y., and Michael J. Rooks, Briarcliff Manor, N.Y., for a "p-FET with a strained nanowire channel and embedded SiGe source and drain stressors." The abstract of the patent published by the U.S. Patent and Trademark Office states: " Techniques for embedding silicon germanium (e-SiGe) source and drain stressors in nanoscale channel-based field effect transistors (FETs) are provided. In one aspect, a method of fabricating a FET includes the following steps. A doped substrate having a dielectric thereon is provided. At least one silicon (Si) nanowire is placed on the dielectric. One or more portions of the nanowire are masked off leaving other portions of the nanowire exposed. Epitaxial germanium (Ge) is grown on the exposed portions of the nanowire. The epitaxial Ge is interdiffused with Si in the nanowire to form SiGe regions embedded in the nanowire that introduce compressive strain in the nanowire. The doped substrate serves as a gate of the FET, the masked off portions of the nanowire serve as channels of the FET and the embedded SiGe regions serve as source and drain regions of the FET." The patent application was filed on July 20, 2012 (13/554,065). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,892.PN.&OS=PN/8,445,892&RS=PN/8,445,892 Written by Kusum Sangma; edited by Anand Kumar. *** Micron Technology Assigned Patent for Zr-Sn-Ti-O Films ALEXANDRIA, Va., May 24 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,445,952) developed by Kie Y. Ahn, Chappaqua, N.Y., and Leonard Forbes, Corvallis, Ore., for a Zr-Sn-Ti-O films. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A dielectric layer containing a Zr--Sn--Ti--O film and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO.sub.2. In an embodiment, forming the Zr--Sn--Ti--O film on a substrate includes depositing materials of the Zr--Sn--Ti--O film substantially as atomic monolayers. In an embodiment, electronic devices include a dielectric layer having a Zr--Sn--Ti--O film such that Zr--Sn--Ti--O material is configured as substantially atomic monolayers. Dielectric layers containing such Zr--Sn--Ti--O films may have minimal reactions with a silicon substrate or other structures during processing." The patent application was filed on Oct. 30, 2009 (12/609,897). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,952.PN.&OS=PN/8,445,952&RS=PN/8,445,952 Written by Kusum Sangma; edited by Anand Kumar. *** Freescale Semiconductor Assigned Patent for High Pressure Deuterium Treatment for Semiconductor/High-K Insulator Interface ALEXANDRIA, Va., May 24 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,445,969) developed by five co-inventors for a "high pressure deuterium treatment for semiconductor/high-K insulator interface." The co-inventors are Xiangdong Chen, Poughquag, N.Y., Laegu Kang, Hopewell Junction, N.Y., Weipeng Li, Beacon, N.Y., Dae-Gyu Park, Poughquaq, N.Y., and Melanie J. Sherony, Wappingers Falls, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "An integrated circuit structure comprises at least one pair of complementary transistors on a substrate. The pair of complementary transistors includes a first transistor and a second transistor. In addition, only one stress-producing layer is on the first transistor and the second transistor and applies tensile strain force on the first transistor and the second transistor. The first transistor has a first channel region, a gate insulator on the first channel region, and a deuterium region between the first channel region and the gate insulator. The second transistor has a germanium doped channel region, as well as the same gate insulator on the germanium doped channel region, and the same deuterium region between the germanium doped channel region and the gate insulator." The patent application was filed on April 27, 2011 (13/094,873). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,969.PN.&OS=PN/8,445,969&RS=PN/8,445,969 Written by Kusum Sangma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Gated Diode Memory Cells ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,946) developed by Wing K. Luk, Chappaqua, N.Y., and Robert H. Dennard, Croton on Hudson, N.Y., for a "gated diode memory cells." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A gated diode memory cell is provided, including one or more transistors, such as field effect transistors ("FETs"), and a gated diode in signal communication with the FETs such that the gate of the gated diode is in signal communication with the source of a first FET, wherein the gate of the gated diode forms one terminal of the storage cell and the source of the gated diode forms another terminal of the storage cell, the drain of the first FET being in signal communication with a bitline ("BL") and the gate of the first FET being in signal communication with a write wordline ("WLw"), and the source of the gated diode being in signal communication with a read wordline ("WLr")." The patent application was filed on Dec. 11, 2003 (10/735,061). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,946.PN.&OS=PN/8,445,946&RS=PN/8,445,946 Written by Kusum Sangma; edited by Anand Kumar. *** Columbia University Assigned Patent ALEXANDRIA, Va., May 24 -- Columbia University, New York, has been assigned a patent (8,445,893) developed by five co-inventors for a "high-performance gate oxides such as for graphene field-effect transistors or carbon nanotubes." The co-inventors are Inanc Meric, New York, Kenneth Shepard, Ossining, N.Y., Noah J. Tremblay, New York, Philip Kim, New York, and Colin P. Nuckolls, New York. The abstract of the patent published by the U.S. Patent and Trademark Office states: "An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices." The patent application was filed on July 19, 2010 (12/839,095). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,445,893.PN.&OS=PN/8,445,893&RS=PN/8,445,893 Written by Kusum Sangma; edited by Anand Kumar. *** Eastman Kodak Assigned Patent ALEXANDRIA, Va., May 24 -- Eastman Kodak, Rochester, N.Y., has been assigned a patent (8,445,853) developed by Ronald Steven Cok, Rochester, N.Y., for a "method of making a radiation-sensitive substrate." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of making a radiation-sensitive apparatus includes providing a first substrate, forming a radiation-sensitive layer over the first substrate, providing a plurality of spatially separated integrated circuits, each integrated circuit having: a second substrate, one or more electronic circuit(s) formed in or on the second substrate, and one or more electrode connection pads formed in or on the second substrate, each electrode connection pad electrically connected to at least one of the electronic circuit(s). A plurality of pixel electrodes is formed over the first substrate separate from the integrated circuit, each pixel electrode electrically connected to an electrode connection pad. An electronic control circuit is electrically connected to each electronic circuit in each integrated circuit. The electronic circuits are responsive to electrical signals formed by the interaction of electromagnetic radiation and the radiation-sensitive layer, the electrical signals conducted by the pixel electrodes and electrode connection pads." The patent application was filed on Aug. 22, 2011 (13/214,550). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,853&OS=8,445,853&RS=8,445,853 Written by Arpi Sharma; edited by Anand Kumar. *** Advion Assigned Patent ALEXANDRIA, Va., May 24 -- Advion, Ithaca, N.Y., has been assigned a patent (8,445,842) developed by four co-inventors for a "mechanical holder for surface analysis." The co-inventors are Daniel Eikel, Trumansburg, N.Y., John D. Henion, Trumansburg, N.Y., Christopher Alpha, Ithaca, N.Y., and Jason Scott Vega, Ithaca, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A mechanical holder that provides for a confined sampling region for extraction and removal of chemical substances contained in a dried blood spot or other spot of sample is described herein." The patent application was filed on July 30, 2012 (13/561,358). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,842&OS=8,445,842&RS=8,445,842 Written by Arpi Sharma; edited by Anand Kumar. *** Spectrum Dynamics Assigned Patent ALEXANDRIA, Va., May 24 -- Spectrum Dynamics, Orangeburg, N.Y., has been assigned a patent (8,445,851) developed by 16 co-inventors for a radioimaging. The co-inventors are Benny Rousso, Rishon-LeZion, Israel, Shlomo Ben-Haim, London, Michael Nagler, Tel-Aviv, Israel, Omer Ziv, Rechovot, Israel, Ran Ravhon, Kiryat-Motzkin, Israel, Dalia Dickman, Moshav Manof Doar-Na Misgav, Israel, Yoel Zilberstein, Haifa, Israel, Eli Dichterman, Haifa, Israel, Simona Ben-Haim, Caesarea, Israel, Shankar Vallabhajosula, Larchmont, N.Y., Daniel Berman, Valley Village, Calif., Zohar Bronshtine, Talmey ElAzar, Israel, Ziv Popper, Zikhron-Yaakov, Israel, Nir Weissberg, Haifa, Israel, Nathaniel Roth, Herzlia Pituach, Israel, and Haim Melman, Kfar-Saba, Israel. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Radioimaging methods, devices and radiopharmaceuticals therefor." The patent application was filed on Oct. 31, 2007 (11/980,683). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,851&OS=8,445,851&RS=8,445,851 Written by Arpi Sharma; edited by Anand Kumar. *** International Business Machines Assigned Patent for Ribonucleic Acid Interference Molecules ALEXANDRIA, Va., May 24 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,445,666) developed by Isidore Rigoutsos, Astoria, N.Y., Tien Huynh, Yorktown Heights, N.Y., and Kevin Charles Miranda, McDowall, Australia, for a "ribonucleic acid interference molecules." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Ribonucleic acid interference molecules are provided. In one aspect of the invention, a method for regulating gene expression comprises the following step. At least one nucleic acid molecule comprising at least one of one or more precursor sequences having SEQ ID NO: 1 through SEQ ID NO: 103,948, each one of the precursor sequences containing one or more mature sequences having SEQ ID NO: 103,949 through SEQ ID NO: 230,447, is used to regulate the expression of one or more genes." The patent application was filed on Oct. 27, 2011 (13/283,103). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,666&OS=8,445,666&RS=8,445,666 Written by Arpi Sharma; edited by Anand Kumar. *** PsycoGenics, University of IL Assigned Patent ALEXANDRIA, Va., May 24 -- PsycoGenics, Tarrytown, N.Y., and the University of IL, Urbana, Ill., have been assigned a patent (8,445,684) developed by six co-inventors for a "nicotinic acetylcholine receptor ligands and the uses thereof." The co-inventors are Jayaraman Chandrasekhar, Trumbull, Conn., Alan P. Kozikowski, Chicago, Jianhua Liu, Chicago, Werner Tueckmantel, Yorktown Heights, N.Y., Joel R. Walker, Schenectady, N.Y., and Po-wai Yuen, Ann Arbor, Mich. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention relates to pyridinyl nicotinic acetylcholine receptor ligands, compositions comprising an effective amount of a pyridinyl nicotinic acetylcholine receptor ligand and methods to treat or prevent a condition, such as depression and nicotine dependence, comprising administering to an animal in need thereof an effective amount of a pyridinyl nicotinic acetylcholine receptor ligand." The patent application was filed on Oct. 13, 2009 (12/578,020). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,684&OS=8,445,684&RS=8,445,684 Written by Arpi Sharma; edited by Anand Kumar. *** Novomer Assigned Patent ALEXANDRIA, Va., May 24 -- Novomer, Ithaca, N.Y., has been assigned a patent (8,445,703) developed by eight co-inventors for a "process for beta-lactone production." The co-inventors are Scott D. Allen, Ithaca, N.Y., Ronald R. Valente, Ithaca, N.Y., Han Lee, Ithaca, N.Y., Anna E. Cherian, Ithaca, N.Y., Donald L. Bunning, South Charleston, W.Va., Nye A. Clinton, Hurricane, W.Va., Olan Stanley Fruchey, Hurricane, W.Va., and Bernard Duane Dombek, Charleston, W.Va. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present application provides a method for producing an beta-lactone product. The method includes the steps of: reacting an epoxide, a solvent with a carbonylation catalyst and carbon monoxide to produce a reaction stream comprising a beta-lactone then separating a portion of the beta-lactone in the reaction stream from the solvent and carbonylation catalyst to produce: i) a beta-lactone stream with the beta-lactone, and ii) a catalyst recycling stream including the carbonylation catalyst and the high boiling solvent; and adding the catalyst recycling stream to the feed stream." The patent application was filed on April 7, 2010 (13/262,985). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,703&OS=8,445,703&RS=8,445,703 Written by Arpi Sharma; edited by Anand Kumar. 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