TMCnet News
U.S. Patents Awarded to Inventors in Texas (May 11)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., May 11 -- The following federal patents were awarded to inventors in Texas. *** Freescale Semiconductor Assigned Patent for Method of Forming Openings in a Semiconductor Device and a Semiconductor Device Fabricated by the Method ALEXANDRIA, Va., May 11 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,435,874) developed by four co-inventors for a "method of forming openings in a semiconductor device and a semiconductor device fabricated by the method." The co-inventors are Scott Warrick, Austin, Texas, Massud Abubaker Aminpur, Crolles, France, Will Conley, Montbonnot-St Martin, France, and Lionel Riviere-Cazeaux, Austin, Texas. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of forming openings to a layer of a semiconductor device comprises forming a dielectric layer over the layer of the semiconductor device, and forming a mask over the dielectric layer. The mask comprises a plurality of mask openings arranged in a regular pattern extending over the dielectric layer and the plurality of mask openings include a plurality of first mask openings and a plurality of second mask openings, each of the plurality of first mask openings being greater in size than each of the plurality of second mask openings. The method further comprises reducing the size of the plurality of second mask openings such that each of the second mask openings is substantially closed and removing portions of the dielectric layer through the plurality of first mask openings to provide openings extending through the dielectric layer to the layer." The patent application was filed on Jan. 23, 2008 (12/812,035). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,874&OS=8,435,874&RS=8,435,874 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Texas Instruments Assigned Patent for PMOS SiGe-last Integration Process ALEXANDRIA, Va., May 11 -- Texas Instruments, Dallas, has been assigned a patent (8,435,848) developed by Manoj Mehrotra, Dallas, for a "PMOS SiGe-last integration process." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process of forming a CMOS integrated circuit including integrating SiGe source/drains in the PMOS transistor after source/drain and LDD implants and anneals. A dual layer hard mask is formed on a polysilicon gate layer. The bottom layer prevents SiGe growth on the polysilicon gate. The top layer protects the bottom layer during source/drain spacer removal. A stress memorization layer may be formed on the integrated circuit prior to a source/drain anneal and removed prior to forming a SiGe blocking layer over the NMOS. SiGe spacers may be formed on the PMOS gate to laterally offset the SiGe recesses." The patent application was filed on Oct. 28, 2011 (13/283,817). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,848&OS=8,435,848&RS=8,435,848 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Freescale Semiconductor Assigned Patent for First Inter-layer Dielectric Stack for Non-volatile Memory ALEXANDRIA, Va., May 11 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,435,898) developed by four co-inventors for a "first inter-layer dielectric stack for non-volatile memory." The co-inventors are Olubunmi O. Adetutu, Austin, Texas, Christopher B. Hundley, Georgetown, Texas, Paul A. Ingersoll, Austin, Texas, and Craig T. Swift, Austin, Texas. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method and apparatus are described for forming a first inter-layer dielectric (ILD0) stack having a protective gettering layer (72) with a substantially uniform thickness. After forming device components (32, 33) on a substrate (31), a gap fill dielectric layer of SATEOS (52) is deposited over an etch stop layer of PEN ESL (42) and then planarized before sequentially depositing a gettering layer of BPTEOS (72) and capping dielectric layer (82) on the planarized gap fill dielectric layer (52). Once the ILD0 stack is formed, one or more contact openings (92, 94, 96) are etched through the ILD0 stack, thereby exposing the etch stop layer (42) over the intended contact regions." The patent application was filed on April 5, 2007 (11/697,106). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,898&OS=8,435,898&RS=8,435,898 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** KCI Licensing Assigned Patent ALEXANDRIA, Va., May 11 -- KCI Licensing, San Antonio, has been assigned a patent (8,435,750) developed by Amy McNulty, San Antonio, Kristine Kiesweller, San Antonio, and Todd Fruchterman, San Antonio, for an "identification of tissue for debridement." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Provided are methods of determining whether a cell in a tissue site is viable or nonviable. Also provided are methods of debriding tissue from a tissue site. Further provided are kits comprising a compound that distinguishes between viable and nonviable cells and instructions for using the compound on a tissue site. Additionally, the use of a compound that distinguishes between viable and nonviable cells is provided, where the use is to determine whether a cell in a tissue site is viable or nonviable. Also provided is a use of a compound that distinguishes between viable and nonviable cells, where the use is for the manufacture of the above-described kit." The patent application was filed on June 8, 2012 (13/492,182). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,435,750.PN.&OS=PN/8,435,750&RS=PN/8,435,750 Written by Kusum Sangma; edited by Anand Kumar. *** University of Texas System Assigned Patent ALEXANDRIA, Va., May 11 -- The University of Texas System, Austin, Texas, has been assigned a patent (8,435,570) developed by Nathan S. Bryan, Houston, for a "nitrite formulations and their use as nitric oxide prodrugs." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compositions comprising a nitrite salt, a nitrate salt, and ascorbic acid are provided in several embodiments. A method of enhancing cardiovascular performance or treating adverse cardiovascular event in a mammal is also provided." The patent application was filed on July 11, 2012 (13/546,581). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,435,570.PN.&OS=PN/8,435,570&RS=PN/8,435,570 Written by Kusum Sangma; edited by Anand Kumar. *** Univation Technologies Assigned Patent ALEXANDRIA, Va., May 11 -- Univation Technologies, Houston, has been assigned a patent (8,435,914) developed by five co-inventors for "mixed metal catalyst systems having a tailored hydrogen response." The co-inventors are Sun-Chueh Kao, Pearland, Texas, Francis C. Rix, League City, Texas, Dongming Li, Houston, C. Jeff Harlan, Houston, and Parul A. Khokhani, Manalapan, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A polymerization catalyst system and polymerization processes using the catalyst systems are disclosed. The polymerization catalyst systems may include a) a first catalyst compound, and b) a second catalyst compound, wherein the first catalyst compound includes an oxadiazole-containing compound. In some embodiments, the oxadiazole-containing compound has essentially no hydrogen response, thus allowing better and/or tailored control of product properties when producing polymers using the catalyst system." The patent application was filed on May 14, 2010 (13/258,945). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,914&OS=8,435,914&RS=8,435,914 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** California Institute of Technology Assigned Patent ALEXANDRIA, Va., May 11 -- California Institute of Technology, Pasadena, Calif., has been assigned a patent (8,435,798) developed by Anupama B. Kaul, Arcadia, Calif., Larry W. Epp, Pasadena, Calif., and Leif Bagge, Austin, Texas, for "applications and methods of operating a three-dimensional nano-electro-mechanical resonator and related devices." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Carbon nanofiber resonator devices, methods for use, and applications of said devices are disclosed. Carbon nanofiber resonator devices can be utilized in or as high Q resonators. Resonant frequency of these devices is a function of configuration of various conducting components within these devices. Such devices can find use, for example, in filtering and chemical detection." The patent application was filed on Jan. 12, 2011 (13/005,511). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,798&OS=8,435,798&RS=8,435,798 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Auburn University, University of Texas System Assigned Patent ALEXANDRIA, Va., May 11 -- Auburn University, Auburn, Ala. and the University of Texas System, Austin, Texas, have been assigned a patent (8,435,533) developed by four co-inventors for "methods and compositions for vaccination comprising nucleic acid and/or polypeptide sequences of Chlamydia." The co-inventors are Stephen A. Johnston, Dallas, Katherine Stemke-Hale, Houston, Kathryn F. Sykes, Dallas, and Bernhard Kaltenboeck, Auburn, Ala. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The instant invention relates to antigens and nucleic acids encoding such antigens obtainable by screening a Chlamydia genome. In more specific aspects, the invention relates to methods of isolating such antigens and nucleic acids and to methods of using such isolated antigens for producing immune responses. The ability of an antigen to produce an immune response may be employed in vaccination or antibody preparation techniques." The patent application was filed on Sept. 26, 2012 (13/627,527). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,435,533.PN.&OS=PN/8,435,533&RS=PN/8,435,533 Written by Kusum Sangma; edited by Anand Kumar. *** Abbott Diabetes Care Assigned Patent ALEXANDRIA, Va., May 11 -- Abbott Diabetes Care, Alameda, Calif., has been assigned a patent (8,435,682) developed by Adam Heller, Austin, Texas, for a "biological fuel cell and methods." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A fuel cell has an anode and a cathode with anode enzyme disposed on the anode and cathode enzyme is disposed on the cathode. The anode is configured and arranged to electrooxidize an anode reductant in the presence of the anode enzyme. Likewise, the cathode is configured and arranged to electroreduce a cathode oxidant in the presence of the cathode enzyme. In addition, anode redox hydrogel may be disposed on the anode to transduce a current between the anode and the anode enzyme and cathode redox hydrogel may be disposed on the cathode to transduce a current between the cathode and the cathode enzyme." The patent application was filed on Aug. 6, 2012 (13/567,903). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,435,682.PN.&OS=PN/8,435,682&RS=PN/8,435,682 Written by Kusum Sangma; edited by Anand Kumar. *** Texas Instruments Assigned Patent for Method of Forming a CMOS IC Having a Compressively Stressed Metal Layer in the NMOS Area ALEXANDRIA, Va., May 11 -- Texas Instruments, Dallas, has been assigned a patent (8,435,849) developed by Xin Wang, New York, Zhiqiang Wu, Plano, Texas, and Ramesh Venugopal, Richardson, Texas, for a "method of forming a CMOS IC having a compressively stressed metal layer in the NMOS area." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A gate stack for an NMOS transistor in an IC to induce tensile stress in the NMOS channel is disclosed. The gate stack includes a first layer of undoped polysilicon, a second layer of n-type polysilicon to establish a desired work function in the gate, layer of compressively stressed metal, and a third layer of polysilicon to provide a silicon surface for subsequent formation of metal silicide. Candidates for the compressively stressed metal are TiN, TaN, W, and Mo. In a CMOS IC, the n-type polysilicon layer and metal layer are patterned in NMOS transistor areas, while the first polysilicon layer and third polysilicon layer are patterned in both NMOS and PMOS transistor areas. Polysilicon CMP may be used to reduce topography between the NMOS and PMOS gate stacks to facilitate gate pattern photolithography." The patent application was filed on April 5, 2012 (13/440,344). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,849&OS=8,435,849&RS=8,435,849 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Huntsman Petrochemical Assigned Patent ALEXANDRIA, Va., May 11 -- Huntsman Petrochemical, The Woodlands, Texas, has been assigned a patent (8,435,927) developed by Curtis M. Elsik, The Woodlands, Texas, for high-load glyphosate formulations. The abstract of the patent published by the U.S. Patent and Trademark Office states: "By the present invention, a surfactant system containing glyphosate has been created which can be used to yield formulations containing an ultra-high load of glyphosate, in which the glyphosate concentration is higher than previously possible in any agriculturally-acceptable formulation. Higher loadings are desirable to reduce shipping and container costs, as well as reduce wastes. The higher loading reduces storage requirements and allows the farmer to handle less volume of pesticide. The main advantage is that maximizing the loading minimizes the cost to deliver the active ingredient, which in turn maximizes economy in use of glyphosate." The patent application was filed on Sept. 29, 2005 (11/664,457). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,927&OS=8,435,927&RS=8,435,927 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Cintas Assigned Patent ALEXANDRIA, Va., May 11 -- Cintas, Cincinnati, has been assigned a patent (8,435,311) developed by four co-inventors for a "method of collecting, transporting and cleaning soiled textiles." The co-inventors are Keith Hartman, Hamilton, Ohio, David Mesko, Wyoming, Ohio, Tim Magee, New Braunfels, Texas, and Richard Gerlach, Loveland, Ohio. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of collecting soiled textiles to be cleaned, comprising the steps of providing a container having an open end, a closed end, and sides extending therebetween, providing a sling having an open end, a second end, and sides extending therebetween disposed in and supported by said container, providing a water soluble bag having an open end, a closed end, and sides extending therebetween and made of a plastic film having a thickness of at least 1.3 mils, wherein said bag dissolves in water at a temperature of 165.degree. F. in less than about 250 seconds, does not dissolve in water at a temperature of 85.degree. F. in 7 days, being capable of containing at least 175 lbs. of soiled textiles, and having a capacity of at least 50 gallons, wherein said bag is disposed in and supported by said sling, and wherein soiled textiles deposited in said container are contained in said bag." The patent application was filed on Nov. 30, 2010 (12/956,708). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,35,311.PN.&OS=PN/84,35,311&RS=PN/84,35,311 Written by Amal Ahmed; edited by Jaya Anand. *** Halliburton Energy Services Assigned Patent ALEXANDRIA, Va., May 11 -- Halliburton Energy Services, Houston, has been assigned a patent (8,435,324) developed by four co-inventors for "chemical agents for leaching polycrystalline diamond elements." The co-inventors are Ram L. Ladi, Tomball, Texas, Carl Edward Wells, Richland Hills, Texas, Bhupinder Kumar Kataria, Spring, Texas, and Stephen W. Almond, Spring, Texas. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The disclosure provides to a PDC element protective system including a mask configured to protect a non-leached portion of a leached polycrystalline diamond compact (PDC) element during a leaching process. The mask may be formed from or coated with polytetrafluoroethylene (PTFE). The disclosure also provides a leaching system containing such a mask and a leaching vessel as well as methods of using the protective and leaching systems. The disclosure further provides a Lewis acid-based leaching agent and methods of its use. Finally, the disclosure provides a method of recycling a PDC or carbide element using a Lewis acid-based leaching agent." The patent application was filed on June 24, 2011 (13/168,733). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,35,324.PN.&OS=PN/84,35,324&RS=PN/84,35,324 Written by Amal Ahmed; edited by Jaya Anand. *** Herman Assigned Patent ALEXANDRIA, Va., May 11 -- Wesley K. Herman, Dallas, has been assigned a patent (8,435,248) developed by Wesley K. Herman, for a "probe tip and infusion sleeve for use with ophthalmological surgery." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A phacoemulsification probe includes a first portion for interconnecting the probe with a phacoemulsification machine. A probe tip has a first end connected with the first portion and a second end curved up to a predetermined angle. The probe tip defines a channel therein for aspirating material through the probe tip from a surgical region." The patent application was filed on July 8, 2008 (12/169,483). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=84,35,248.PN.&OS=PN/84,35,248&RS=PN/84,35,248 Written by Amal Ahmed; edited by Jaya Anand. *** KCI Licensing Assigned Patent ALEXANDRIA, Va., May 11 -- KCI Licensing, San Antonio, has been assigned a patent (8,435,213) developed by four co-inventors for a "system for administering reduced pressure treatment having a manifold with a primary flow passage and a blockage prevention member." The co-inventors are Douglas A. Cornet, San Antonio, Michael Manwaring, San Antonio, Larry D. Swain, San Antonio, and Jonathan Kagan, Hopkins, Minn. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A reduced pressure delivery system is provided and includes a primary manifold, a blockage prevention member, and first and second conduits in fluid communication with the primary manifold. The primary manifold includes a wall surrounding a primary flow passage and is adapted to be placed in proximity to a tissue site. The blockage prevention member is positioned within the primary flow passage. A plurality of apertures is disposed in the wall to communicate with the primary flow passage. The first conduit is fluidly connected to the primary flow passage to deliver reduced pressure through the primary flow passage and the plurality of apertures. The second conduit includes an outlet proximate the primary flow passage or an outlet of the first conduit to purge the primary flow passage or first conduit to prevent blockages." The patent application was filed on Dec. 20, 2011 (13/332,233). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,213&OS=8,435,213&RS=8,435,213 Written by Neha Bharti; edited by Jaya Anand. *** Southwest Research Institute Assigned Patent ALEXANDRIA, Va., May 11 -- Southwest Research Institute, San Antonio, has been assigned a patent (8,435,478) developed by Maoqi Feng, San Antonio, Francis Yu Chang Huang, San Antonio, and Richard L. Johnson, San Marcos, Texas, for an "enhancement of syngas production in coal gasification with CO.sub.2 conversion under plasma conditions." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process and apparatus for enhancement of syngas production (CO and H.sub.2) of a carbon based feedstock with CO.sub.2 conversion, which utilized CO.sub.2 as an oxygen resource and converts CO.sub.2 to CO through chemical reactions. The process includes a thermal plasma reactor and optionally a nonthermal plasma reactor." The patent application was filed on Jan. 27, 2011 (13/015,206). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,478&OS=8,435,478&RS=8,435,478 Written by Arpi Sharma; edited by Anand Kumar. *** 3M Innovative Properties Assigned Patent ALEXANDRIA, Va., May 11 -- 3M Innovative Properties, St. Paul, Minn., has been assigned a patent (8,435,427) developed by five co-inventors for "compositions having non-linear current-voltage characteristics." The co-inventors are Dipankar Ghosh, Oakdale, Minn., Kenton D. Budd, Woodbury, Minn., Nanayakkara L.D. Somasiri, Austin, Texas, Ge Jiang, Cedar Park, Texas, and Bradley L. Givot, St. Paul, Minn. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Provided are compositions and materials that have varistor properties and are suitable for use in electrical stress control devices and surge arrestor devices. The compositions and materials include a polymeric material and calcined calcium copper titanate filler material and have a reversible non-linear current-voltage characteristic." The patent application was filed on Aug. 26, 2010 (12/869,129). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,427&OS=8,435,427&RS=8,435,427 Written by Arpi Sharma; edited by Anand Kumar. *** Texas Instruments Assigned Patent for Micromechanical Device Lubrication ALEXANDRIA, Va., May 11 -- Texas Instruments, Dallas, has been assigned a patent (8,436,453) developed by Simon Joshua Jacobs, Lucas, Texas, and Seth A. Miller, Englewood, Colo., for a micromechanical device lubrication. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present application is directed to a reservoir for use with a micro-electromechanical device having a first surface area to be lubricant. The reservoir comprises a solid component with a porous structure having a second surface area. The second surface area is greater than the first surface area. The reservoir also comprises a lubricant capable of reversibly reacting with either the solid component or the first surface area of the micro-electromechanical device." The patent application was filed on Dec. 28, 2006 (11/617,459). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,436,453&OS=8,436,453&RS=8,436,453 Written by Arpi Sharma; edited by Anand Kumar. *** Sematech Assigned Patent ALEXANDRIA, Va., May 11 -- Sematech, Albany, N.Y., has been assigned a patent (8,436,422) developed by Wei-Yip Loh, Austin, Texas, Brian Coss, Coppell, Texas, and Kanghoon Jeon, Albany, Calif., for "tunneling field-effect transistor with direct tunneling for enhanced tunneling current." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. The abrupt junction may be formed by placement of a dielectric layer or a dielectric layer and a semiconductor layer in a current path between the source and drain regions. The dielectric layer may be a low permittivity oxide such as silicon oxide, lanthanum oxide, zirconium oxide, or aluminum oxide." The patent application was filed on March 8, 2010 (12/719,697). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,436,422&OS=8,436,422&RS=8,436,422 Written by Arpi Sharma; edited by Anand Kumar. *** Air Liquide Electronics U.S. Assigned Patent ALEXANDRIA, Va., May 11 -- Air Liquide Electronics U.S., Dallas, has been assigned a patent (8,435,428) developed by Bin Xia, Plano, Texas, and Ashutosh Misra, Plano, Texas, for "methods for forming a ruthenium-based film on a substrate." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate." The patent application was filed on Jan. 20, 2011 (13/010,018). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,435,428&OS=8,435,428&RS=8,435,428 Written by Arpi Sharma; edited by Anand Kumar. *** Texas Instruments Assigned Patent for IC Device having Low Resistance TSV Comprising Ground Connection ALEXANDRIA, Va., May 11 -- Texas Instruments, Dallas, has been assigned a patent (8,436,475) developed by five co-inventors for an "IC device having low resistance TSV comprising ground connection." The co-inventors are Rajiv Dunne, Murphy, Texas, Gary P. Morrison, Garland, Texas, Satyendra S. Chauhan, Sugarland, Texas, Masood Murtuza, Sugar Land, Texas, and Thomas D. Bonifield, Dallas. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device includes an integrated circuit (IC) die including a substrate, and a plurality of through substrate via (TSV) that extends through the substrate to a protruding integral tip and which is partially covered with a dielectric liner and partially exposed from the dielectric liner. A metal layer is on the bottom surface of the IC die physically connecting the plurality of TSVs and physically and electrically connected to connecting the first metal protruding tips of TSVs." The patent application was filed on April 11, 2012 (13/444,508). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,436,475&OS=8,436,475&RS=8,436,475 Written by Arpi Sharma; edited by Anand Kumar. For more information about Targeted News Service products and services, please contact: Myron Struck, editor, Targeted News Service LLC, Springfield, Va., 703/304-1897; [email protected]; http://targetednews.com. -1124594 (c) 2013 Targeted News Service |