[May 11, 2013] Sematech Assigned Patent Tweet (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., May 11 -- Sematech, Albany, N.Y., has been assigned a patent (8,436,422) developed by Wei-Yip Loh, Austin, Texas, Brian Coss, Coppell, Texas, and Kanghoon Jeon, Albany, Calif., for "tunneling field-effect transistor with direct tunneling for enhanced tunneling current." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Horizontal and vertical tunneling field-effect transistors (TFETs) having an abrupt junction between source and drain regions increases probability of direct tunneling of carriers (e.g., electrons and holes). The increased probability allows a higher achievable on current in TFETs having the abrupt junction. The abrupt junction may be formed by placement of a dielectric layer or a dielectric layer and a semiconductor layer in a current path between the source and drain regions. The dielectric layer may be a low permittivity oxide such as silicon oxide, lanthanum oxide, zirconium oxide, or aluminum oxide." The patent application was filed on March 8, 2010 (12/719,697). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,436,422&OS=8,436,422&RS=8,436,422 Written by Arpi Sharma; edited by Anand Kumar. AS0511AK0511-876191 (c) 2013 Targeted News Service [ Back To TMCnet.com's Homepage ]