[May 10, 2013] Microsemi Assigned Patent Tweet (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., May 10 -- Microsemi, Bend, Ore., has been assigned a patent (8,436,367) developed by Dumitru Sdrulla, Bend, Ore., Bruce Odekirk, Bend, Ore., and Marc Vandenberg, Bend, Ore., for a "SiC power vertical DMOS with increased safe operating area." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A SiC Power Semiconductor device of the Field Effect Type (MOSFET, IGBT or the like) with "muted" channel conduction, negative temperature coefficient of channel mobility, in situ "ballasted" source resistors and optimized thermal management of the cells for increased Safe Operating Area is described. Controlling the location of the Zero Temperature Crossover Point (ZTCP) in relationship to the drain current is achieved by the partition between the "active" and "inactive" channels and by adjusting the mobility of the carriers in the channel for the temperature range of interest. The "Thermal management" is realized by surrounding the "active" cells/fingers with "inactive" ones and the "negative" feedback of the drain/collector current due to local increase of the gate bias is achieved by implementing in-situ "ballast" resistors inside of each source contact." The patent application was filed on Sept. 13, 2011 (13/231,877). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,436,367&OS=8,436,367&RS=8,436,367 Written by Arpi Sharma; edited by Anand Kumar. AS0510AK0510-875852 (c) 2013 Targeted News Service [ Back To TMCnet.com's Homepage ]