[May 06, 2013] SANYO Semiconductor, Semiconductor Components Industries Assigned Patent Tweet (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., May 6 -- SANYO Semiconductor, Ora-gun, Japan, and Semiconductor Components Industries, Phoenix, have been assigned a patent (8,431,998) developed by Takuji Miyata, Ora-Gun, Japan, for an "insulated gate semiconductor device." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A two-layer electrode structure is provided. A protection diode is provided not to overlap a gate pad portion. Cells and a first one of source electrode layers can be provided below the gate pad portion, so that the differences in resistance among various points in the source electrode layers can be decreased. In addition, the protection diode is positioned adjacent to a device region and at an end portion, of a chip, outward of the device region in such a way as to be in the closest proximity to the gate pad portion. A larger device region with efficient transistor operation can thus be secured, and the resistance of the first source electrode layer below a wiring portion can be reduced." The patent application was filed on Jan. 25, 2010 (12/692,777). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,431,998&OS=8,431,998&RS=8,431,998 Written by Arpi Sharma; edited by Anand Kumar. AS0506AK0506-874053 (c) 2013 Targeted News Service [ Back To TMCnet.com's Homepage ]