[April 22, 2013] Intel Assigned Patent for Strain-inducing Semiconductor Regions Tweet (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., April 22 -- Intel, Santa Clara, Calif., has been assigned a patent (8,421,059) developed by Suman Datta, Beaverton, Ore., Jack T. Kavalieros, Portland, Ore., and Been-Yih Jin, Lake Oswego, Ore., for a strain-inducing semiconductor regions. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate." The patent application was filed on Oct. 5, 2010 (12/898,211). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,421,059&OS=8,421,059&RS=8,421,059 Written by Arpi Sharma; edited by Anand Kumar. AS0422AK0422-868643 (c) 2013 Targeted News Service [ Back To TMCnet.com's Homepage ]