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Freescale Semiconductor Assigned Patent
[January 21, 2013]

Freescale Semiconductor Assigned Patent

(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Jan. 21 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,354,325) developed by Thuy B. Dao, Austin, Texas, Qiang Li, Gilbert, Ariz., and Melvy F. Miller, Tempe, Ariz., for a "method for forming a toroidal inductor in a semiconductor substrate." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A toroidal inductor formed in a semiconductor substrate. Through-silicon vias are used to connect metal layers formed on top and bottom surfaces of the semiconductor substrate. In one embodiment, the vias are elongated and laid out in two concentric circles, an inner circle enclosed by an outer circle. The vias of the outer concentric circle are longer than the vias of the inner circle so that spaces between vias are the same for both circles. In another embodiment, each elongated via may include a plurality of circular vias formed in a line. Metals layers on the top and bottom of the semiconductor substrate are patterned to form wedge shaped connectors between the inner and outer vias to form the spirals of the toroidal inductor. The wedge shaped connectors with elongated vias allow spacing between spirals to be constant." The patent application was filed on June 29, 2011 (13/171,989). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,354,325.PN.&OS=PN/8,354,325&RS=PN/8,354,325 Written by Kusum Sangma; edited by Anand Kumar.

KS0121AK0121-832969 (c) 2013 Targeted News Service

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