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U.S. Patents Awarded to Inventors in New York (May 5)
(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service
Targeted News Service
ALEXANDRIA, Va., May 5 -- The following federal patents were awarded to inventors in New York.
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International Business Machines Assigned Patent for Encryption Data Integrity Check with Dual Parallel Encryption Engines
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,171,282) developed by seven co-inventors for an "encryption data integrity check with dual parallel encryption engines." The co-inventors are Stefan Amann, Holzgerlingen, Germany, Gerhard Banzhaf, Nufringen, Germany, Kenneth W. Boyd, Tucson, Ariz., Daniel F. Casper, Poughkeepsie, N.Y., John R. Flanagan, Poughkeepsie, N.Y., Jeffrey W. Palm, Rochester, Minn., and Harry M. Yudenfriend, Poughkeepsie, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An encryption method encrypts a clear text twice using a first encryption engine to produce a first cipher text and a second encryption engine to produce a second cipher text. The method compares the first cipher text with the second cipher text, or compares a checksum of the first cipher text with a checksum of the second cipher text. If the comparison succeeds, the method transmits the data. In some embodiments, the method uses a first instance of an encryption key to produce the first cipher text and a second instance of the encryption key to produce the second cipher text."
The patent application was filed on Nov. 15, 2007 (11/940,496). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,171,282&OS=8,171,282&RS=8,171,282
Written by Arpi Sharma; edited by Anand Kumar.
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Xerox Assigned Patent for Structurally Simplified Flexible Imaging Members
ALEXANDRIA, Va., May 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,168,356) developed by six co-inventors for a "structurally simplified flexible imaging members." The co-inventors are Robert C.U. Yu, Webster, N.Y., Stephen T. Avery, Rochester, N.Y., Yuhua Tong, Webster, N.Y., Michael Roetker, Webster, N.Y., Edward F. Grabowski, Webster, N.Y., and Jimmy E. Kelly, Rochester, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The presently disclosed embodiments relate in general to electrophotographic imaging members, such as layered photoreceptor structures, and processes for making and using the same. More particularly, the embodiments pertain to the incorporation of a liquid compound having a high boiling point into the charge transport layer such that an anticurl back coating is no longer needed for reduction or elimination of photoreceptor upward curling."
The patent application was filed on May 1, 2009 (12/434,493). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,356&OS=8,168,356&RS=8,168,356
Written by Arpi Sharma; edited by Anand Kumar.
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Metaproteomics Assigned Patent
ALEXANDRIA, Va., May 5 -- Metaproteomics, San Clemente, Calif., has been assigned a patent (8,168,234) developed by eight co-inventors for "compositions that treat or inhibit pathological conditions associated with inflammatory response." The co-inventors are Matthew L. Tripp, Gig Harbor, Wash., John G. Babish, Brooktondale, N.Y., Jeffrey S. Bland, Fox Island, Wash., Gary K. Darland, Gig Harbor, Wash., Robert Lerman, Gig Harbor, Wash., Daniel O. Lukaczer, Gig Harbor, Wash., DeAnn J. Liska, Tacoma, Wash., and Terrence Howell, Jamaica Plain, Mass.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A natural formulation of compounds that would to modulate inflammation is disclosed. The formulation would also inhibit expression of COX-2, inhibit synthesis of prostaglandins selectively in target cells, and inhibit inflammatory response selectively in target cells. The compositions containing at least one fraction isolated or derived from hops. Other embodiments relate to combinations of components, including at least one fraction isolated or derived from hops, tryptanthrin and conjugates thereof, rosemary, an extract or compound derived from rosemary, a triterpene species, or a diterpene lactone or derivatives or conjugates thereof."
The patent application was filed on March 29, 2007 (11/729,696). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,234&OS=8,168,234&RS=8,168,234
Written by Arpi Sharma; edited by Anand Kumar.
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Xerox Assigned Patent for Polysulfone Containing Photoconductors
ALEXANDRIA, Va., May 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,168,358) developed by Jin Wu, Webster, N.Y., for a polysulfone containing photoconductors.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and a charge transport layer, and wherein the charge transport layer contains a polysulfone."
The patent application was filed on June 29, 2009 (12/493,481). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,358&OS=8,168,358&RS=8,168,358
Written by Arpi Sharma; edited by Anand Kumar.
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GM Global Technology Operations Assigned Patent
ALEXANDRIA, Va., May 5 -- GM Global Technology Operations, Detroit, has been assigned a patent (8,168,343) developed by four co-inventors for a "humidification control during shutdown of a fuel cell system." The co-inventors are Bruce J. Clingerman, Palmyra, N.Y., Steven D. Burch, Honeoye Falls, N.Y., John P. Salvador, Penfield, N.Y., and Manish Sinha, Pittsford, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process for controlling the length of a purge and the purge rate of a fuel cell stack at system shut-down so as to provide the desired amount of stack humidity. The membrane humidification is measured at system shut-down by a high frequency resistance sensor that detects membrane humidification and provides the measurement to a controller. The controller controls the compressor that provides cathode input air to the fuel cell stack so that the time of the purge and the flow rate of the purge provide a desired membrane humidity for the next start-up."
The patent application was filed on Aug. 1, 2008 (12/184,776). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,343&OS=8,168,343&RS=8,168,343
Written by Arpi Sharma; edited by Anand Kumar.
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GM Global Technology Operations Assigned Patent for Water Removal Features for PEMfc Stack Manifolds
ALEXANDRIA, Va., May 5 -- GM Global Technology Operations, Detroit, has been assigned a patent (8,168,340) developed by five co-inventors for a "water removal features for PEMfc stack manifolds." The co-inventors are Lee C. Whitehead, Middleport, N.Y., Steven R. Falta, Honeoye Falls, N.Y., Thomas A. Trabold, Pittsford, N.Y., Jon P. Owejan, Honeoye, N.Y., and Thomas W. Tighe, Bloomfield, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A bipolar plate includes angled facets oriented to form V-shaped projections on the plate edge. Liquid leaving the reactant channels is drawn back into the V-shaped grooves of the projections, leaving no liquid to obstruct the channel exit openings. The bipolar plate includes one portion of the bipolar plate offset from another portion of the bipolar plate so as to expose the reactant channels. The liquid is drawn toward the end portions of the reactant channels by capillary forces, while the gas flows can exit near the beginning of the offset portion. A fuel cell stack includes angled facets that are rotated to lie in the plane of the bipolar plate edges. The edges are chamfered so the channel exit openings of the reactant channels are at the tip portions thereof, thus allowing the liquid to flow away from the channel exit openings and the gas to exit freely."
The patent application was filed on Nov. 7, 2007 (11/936,633). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,340&OS=8,168,340&RS=8,168,340
Written by Arpi Sharma; edited by Anand Kumar.
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Delphi Technologies Assigned Patent
ALEXANDRIA, Va., May 5 -- Delphi Technologies, Troy, Mich., has been assigned a patent (8,168,347) developed by Gary F. Reisdorf, Penfield, N.Y., and Karl J. Haltiner Jr., Fairport, N.Y., for a "SOFC assembly joint spacing."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A textured surface is formed on at least one of a fuel cell mounting plate or fuel cell subassembly to define a joint spacing between these two components. In a preferred embodiment, the textured surface comprises a plurality of dimples coined or otherwise formed in the metal mounting plate. The joint spacing improves the manufacturing and assembly process of the fuel cell cassettes through precise application and control of the brazing process which improves the braze joint strength while reducing material cost."
The patent application was filed on Oct. 14, 2005 (11/250,678). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,347&OS=8,168,347&RS=8,168,347
Written by Arpi Sharma; edited by Anand Kumar.
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Aspen Acquisition Assigned Patent
ALEXANDRIA, Va., May 5 -- Aspen Acquisition, San Diego, has been assigned a patent (8,171,265) developed by Mayan Moudgill, White Plains, N.Y., and Sitij Agrawal, New York, for "accelerating traceback on a signal processor."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method executed by an instruction set on a processor is described. The method includes providing a tbbit instruction, inputting a first index for the tbbit instruction, loading a second value for the tbbit instruction, wherein the second value comprises at least 2.sup.b bits, using selected b bits of the first index to select at least one target bit in the loaded second value, shifting the target bit into the bottom of the first index, and computing a second index based on the shifting of the target bit into the bottom of the first index. Other methods and variations are also described."
The patent application was filed on Dec. 8, 2008 (12/375,202). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,171,265&OS=8,171,265&RS=8,171,265
Written by Arpi Sharma; edited by Anand Kumar.
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VA, Wayne State University Assigned Patent
ALEXANDRIA, Va., May 5 -- The U.S. Department of Veterans Affairs and Wayne State University, Detroit, have been assigned a patent (8,168,398) developed by Harvey I. Pass, New York, and Anil Wali, Detroit, for an "asbestos exposure, pleural mesothelioma, and osteopontin levels."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides diagnostic methods based on levels of osteopontin."
The patent application was filed on Jan. 12, 2011 (13/005,344). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,398&OS=8,168,398&RS=8,168,398
Written by Arpi Sharma; edited by Anand Kumar.
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Xerox Assigned Patent for Polyfluorinated Core Shell Photoconductors
ALEXANDRIA, Va., May 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,168,357) developed by six co-inventors for a "polyfluorinated core shell photoconductors." The co-inventors are Jin Wu, Webster, N.Y., Kenny-Tuan T. Dinh, Webster, N.Y., Linda L. Ferrarese, Rochester, N.Y., Marc J. Livecchi, Rochester, N.Y., Edward C. Savage, Webster, N.Y., and Michael E. Zak, Canandaigua, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes a photogenerating layer and a charge transport layer containing a charge transport component, a fluorinated polymer, and a core shell component, and wherein the core is comprised of a metal oxide and the shell is comprised of silica."
The patent application was filed on June 29, 2009 (12/493,461). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,357&OS=8,168,357&RS=8,168,357
Written by Arpi Sharma; edited by Anand Kumar.
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E.I. du Pont de Nemours Assigned Patent
ALEXANDRIA, Va., May 5 -- E.I. du Pont de Nemours, Wilmington, Del., has been assigned a patent (8,168,297) developed by Larry Glen Snow, Leroy, N.Y., for a "fluoropolymer coated film, process for forming the same, and fluoropolymer liquid composition."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process for forming a multilayer film includes coating a polymeric substrate film with a liquid fluoropolymer coating. The liquid fluoropolymer coating includes a fluoropolymer, solvent, a compatible cross-linkable adhesive polymer, and a cross-linking agent. The process further includes cross-linking the compatible cross-linkable adhesive polymer to form a cross-linked polymer network in the fluoropolymer coating, removing the solvent from the fluoropolymer coating, and adhering the fluoropolymer coating to the polymeric substrate film. A liquid fluoropolymer coating composition includes a fluoropolymer selected from homopolymers and copolymers of vinyl fluoride and homopolymers and copolymers of vinylidene fluoride, solvent, a compatible cross-linkable adhesive polymer, and a cross-linking agent. A fluoropolymer coated film includes a polymeric substrate film and a fluoropolymer coating on the polymeric substrate film. The fluoropolymer coating includes a fluoropolymer and a compatible cross-linked adhesive polymer."
The patent application was filed on April 11, 2008 (12/101,413). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,297&OS=8,168,297&RS=8,168,297
Written by Arpi Sharma; edited by Anand Kumar.
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Osmose Assigned Patent
ALEXANDRIA, Va., May 5 -- Osmose, Buffalo, N.Y., has been assigned a patent (8,168,304) developed by Jun Zhang, Getzville, N.Y., Wenjin Zhang, Tonawanda, N.Y., and Robert M. Leach, Grand Island, N.Y., for a "micronized wood preservative formulations comprising boron compounds."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention provides wood preservative and flame retardant compositions having low leachability comprising micronized boron compounds and, optionally, one or more organic biocides which may be micronized. Also provided is a method for applying the composition to wood and wood products comprising impregnating the wood with the composition."
The patent application was filed on Jan. 21, 2010 (12/691,707). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,304&OS=8,168,304&RS=8,168,304
Written by Arpi Sharma; edited by Anand Kumar.
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Xerox Assigned Patent for Fuser Member
ALEXANDRIA, Va., May 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,168,287) developed by Kock-Yee Law, Penfield, N.Y., and Hong Zhao, Webster, N.Y., for a fuser member.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present teachings provide a fuser member. The fuser member includes a substrate, a functional layer disposed on the substrate, and an outer layer disposed on the functional layer. The outer layer includes silicon having a texture, and a conformal oleophobic coating disposed on the silicon."
The patent application was filed on Feb. 25, 2010 (12/712,221). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,287&OS=8,168,287&RS=8,168,287
Written by Arpi Sharma; edited by Anand Kumar.
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General Electric Assigned Patent
ALEXANDRIA, Va., May 5 -- General Electric, Niskayuna, N.Y., has been assigned a patent (8,168,259) developed by four co-inventors for "articles for high temperature service and methods for their manufacture." The co-inventors are Reza Sarrafi-Nour, Clifton Park, N.Y., Krishan Lal Luthra, Niskayuna, N.Y., Peter Joel Meschter, Niskayuna, N.Y., and Curtis Alan Johnson, Niskayuna, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An article for use in aggressive environments is presented. In one embodiment, the article comprises a substrate and a self-sealing and substantially hermetic sealing layer disposed over the bondcoat. The substrate may be any high-temperature material, including, for instance, silicon-bearing ceramics and ceramic matrix composites. A method for making such articles is also presented. The method comprises providing a substrate; disposing a self-sealing layer over the substrate; and heating the sealing layer to a sealing temperature at which at least a portion of the sealing layer will flow."
The patent application was filed on Oct. 15, 2010 (12/905,316). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,259&OS=8,168,259&RS=8,168,259
Written by Arpi Sharma; edited by Anand Kumar.
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Cornell Research Foundation Assigned Patent
ALEXANDRIA, Va., May 5 -- Cornell Research Foundation, Ithaca, N.Y., has been assigned a patent (8,168,207) developed by Yung-Fu Chang, Ithaca, N.Y., and Raghavan U.M. Palaniappan, Ithaca, N.Y., for an "immunogenic proteins of Leptospira."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits."
The patent application was filed on Oct. 28, 2008 (12/259,782). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,207&OS=8,168,207&RS=8,168,207
Written by Arpi Sharma; edited by Anand Kumar.
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University of Utah Research Foundation Assigned Patent
ALEXANDRIA, Va., May 5 -- The University of Utah Research Foundation, Salt Lake City, has been assigned a patent (8,168,174) developed by four co-inventors for a "method of isolating human neuroepithelial precursor cells from human fetal tissue." The co-inventors are Margot Mayer-Proschel, Pittsford, N.Y., Mahendra S. Rao, Salt Lake City, Patrick A. Tresco, Sandy, Utah, and Darin J. Messina, Salt Lake City.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for isolating human neuroepithelial precursor cells from human fetal tissue by culturing the human fetal cells in fibroblast growth factor and chick embryo extract and immunodepleting from the cultured human fetal cells any cells expressing A2B5, NG2 and eNCAM is provided. In addition, methods for transplanting these cells into an animal are provided. Animals models transplanted with these human neuroepithelial precursor cells and methods for monitoring survival, proliferation, differentiation and migration of the cells in the animal model via detection of human specific markers are also provided."
The patent application was filed on March 1, 2009 (12/395,677). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,174&OS=8,168,174&RS=8,168,174
Written by Arpi Sharma; edited by Anand Kumar.
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Avon Products Assigned Patent
ALEXANDRIA, Va., May 5 -- Avon Products, New York, has been assigned a patent (8,168,212) developed by Dmitri S. Ptchelintsev, Jersey City, N.J., Laurence Dryer, Long Beach, Calif., and Xiaochun Luo, New City, N.Y., for a "topical compositions comprising non-proteogenic amino acids and methods of treating skin."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Cosmetic compositions comprising non-natural, non-proteogenic amino acids and methods of using such compositions to impart antiaging benefits to the skin are disclosed. The non-natural, non-proteogenic amino acids are believed to have modulatory activity against one or more biochemical pathways implicated in skin aging, and in particular, are enhancers of LOXL-1."
The patent application was filed on Nov. 14, 2008 (12/747,272). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,212&OS=8,168,212&RS=8,168,212
Written by Arpi Sharma; edited by Anand Kumar.
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HHS Assigned Patent for Vaccines Against Escherichia Coli O157 Infection
ALEXANDRIA, Va., May 5 -- The U.S. Department of Health and Human Services has been assigned a patent (8,168,195) developed by four co-inventors for a "vaccines against Escherichia coli O157 infection." The co-inventors are Shousun Chen Szu, Bethesda, Md., John B. Robbins, Chevy Chase, Md., Edward Konadu, Ashanti Region, Ghana, and Yvonne Ageyman Konadu legal representative, Bronx, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention relates to conjugates of the O-specific polysaccharide of E. coli O157 with a carrier, and compositions thereof, and to methods of using of using of these conjugates and/or compositions thereof for eliciting an immunogenic response in mammals, including responses which provide protection against, or reduce the severity of, bacterial infections. More particularly it relates to the use of polysaccharides containing the tetrasaccharide repeat unit: (.fwdarw.3)-.alpha.-DGalpNAc-(1.fwdarw.2)-.alpha.-D-PerpNAc-(1.fwdarw.3)-- .alpha.-L-Fucp-(1.fwdarw.4)-.beta.-D-Glcp-(1.fwdarw.), and conjugates thereof, to induce serum antibodies having bactericidal (killing) activity against hemolytic-uremic syndrome (HUS) causing E. coli, in particular E. coli O157. The conjugates, and compositions thereof, are useful as vaccines to induce serum antibodies which have bactericidal or bacteriostatic activity against E. coli, in particular E. coli O157, and are useful to prevent and/or treat illnesses caused by E. coli O157. The invention further relates to the antibodies which immunoreact with the O-specific polysaccharide of E. coli O157 and/or the carrier, that are induced by these conjugates and/or compositions thereof. The invention also relates to methods and kits using one or more of the polysaccharides, conjugates or antibodies described above."
The patent application was filed on May 22, 2009 (12/471,049). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,195&OS=8,168,195&RS=8,168,195
Written by Arpi Sharma; edited by Anand Kumar.
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McLean Hospital Assigned Patent
ALEXANDRIA, Va., May 5 -- McLean Hospital, Belmont, Mass., has been assigned a patent (8,168,169) developed by Anne Cataldo, Sutton, Mass., Chun-Wei Chen, Rochester, N.Y., and Bruce M. Cohen, Lexington, Mass., for "methods and compositions for the treatment of medical disorders."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "In general, the invention relates to marrow-derived adult progenitor cells (MAPCs) and their use in methods of treating various medical disorders, typically caused by or involving loss of cells or loss of cell function. These cells, when administered, e.g., intranasally, can cross the blood brain barrier and terminally differentiate into cholinergic neurons or otherwise localize and terminally differentiate."
The patent application was filed on Aug. 8, 2007 (11/891,138). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,169&OS=8,168,169&RS=8,168,169
Written by Arpi Sharma; edited by Anand Kumar.
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International Business Machines Assigned Patent for Method of Forming Extremely Thin Semiconductor on Insulator (ETSOI) Device Without Ion Implantation
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,169,024) developed by four co-inventors for a "method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation." The co-inventors are Kangguo Cheng, Albany, N.Y., Bruce B. Doris, Yorktown Heights, N.Y., Pranita Kulkarni, Albany, N.Y., and Ghavam Shahidi, Yorktown Heights, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of fabricating a semiconductor device is provided in which the channel of the device is present in an extremely thin silicon on insulator (ETSOI) layer, i.e., a silicon containing layer having a thickness of less than 10.0 nm. In one embodiment, the method may begin with providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A in-situ doped semiconductor material is formed on the first semiconductor layer adjacent to the gate structure. The dopant from the in-situ doped semiconductor material is then diffused into the first semiconductor layer to form extension regions. The method is also applicable to finFET structures."
The patent application was filed on Aug. 18, 2009 (12/542,771). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,024&OS=8,169,024&RS=8,169,024
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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General Electric Assigned Patent
ALEXANDRIA, Va., May 5 -- General Electric, Schenectady, N.Y., has been assigned a patent (8,169,220) developed by five co-inventors for a "flattened gradient coil for MRI systems." The co-inventors are Timothy James Hollis, Abingdon, United Kingdom, Neil Clarke, Abingdon, United Kingdom, Chris Mark Cirel, Eynsham, United Kingdom, Bruce Courtney Campbell Amm, Clifton Park, N.Y., and Michael Ben Sellers, Kingston Bagpuize, United Kingdom.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A gradient coil and an insert gradient coil for a magnetic resonance imaging system include a primary coil. The primary coil includes an upper primary coil portion and a lower primary coil portion, the lower primary coil portion being less curved in cross-section than the upper primary coil portion. The gradient coil also includes a shielding coil disposed outside of the primary coil. The shielding coil includes an upper shielding coil portion and a lower shielding coil portion, the lower shielding coil portion being less curved in cross-section than the upper shielding coil portion."
The patent application was filed on Dec. 15, 2009 (12/637,997). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,220&OS=8,169,220&RS=8,169,220
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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International Business Machines Assigned Patent
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,169,026) developed by four co-inventors for a stress-induced CMOS device. The co-inventors are Zhijiong Luo, Carmel, N.Y., QingQing Liang, Hopewell Junction, N.Y., Haizhou Yin, Hopewell Junction, N.Y., and Huilong Zhu, Poughkeepsie, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device including: a silicon dioxide layer; an n-type field effect transistor (NFET) including at least one recessed source/drain trench and located over a portion of the silicon dioxide layer; a p-type field effect transistor (PFET) including at least one recessed source/drain trench and located over a portion of the silicon dioxide layer; a nitride stress liner over the NFET and the PFET, the nitride stress liner filling the at least one recessed source/drain trench of the NFET and the at least one recessed source/drain trench of the PFET; and a first contact formed in the silicon dioxide layer, the first contact abutting one of the NFET or the PFET."
The patent application was filed on Sept. 23, 2011 (13/242,380). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,026&OS=8,169,026&RS=8,169,026
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Global Energy Innovations Assigned Patent
ALEXANDRIA, Va., May 5 -- Global Energy Innovations, Santa Clara, Calif., has been assigned a patent (8,169,195) developed by Stanley Chait, New York, and Paul Nicholas Chait, San Rafael, Calif., for a "method and apparatus for using a battery terminal temperature differential during charging of the battery."
The abstract of the patent published by the U.S. Patent and Trademark Office states: " A first input receives an indication as to a temperature of a positive terminal from a first temperature probe. A second input receives an indication as to a temperature of a negative terminal from a second temperature probe. A monitor takes an action when a temperature differential that represents a difference in temperature between the positive and negative terminals at a single point in time exceeds a predetermined differential magnitude."
The patent application was filed on Oct. 29, 2008 (12/290,359). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,195&OS=8,169,195&RS=8,169,195
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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International Business Machines Assigned Patent for Continuous Metal Semiconductor Alloy Via for Interconnects
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,169,031) developed by Guy M. Cohen, Mohegan Lake, N.Y., Christos D. Dimitrakopoulos, Baldwin Place, N.Y., and Alfred Grill, White Plains, N.Y., for a "continuous metal semiconductor alloy via for interconnects."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A contact structure is disclosed in which a continuous metal semiconductor alloy is located within a via contained within a dielectric material. The continuous semiconductor metal alloy is in direct contact with an upper metal line of a first metal level located atop the continuous semiconductor metal alloy and at least a surface of each source and drain diffusion region located beneath the continuous metal semiconductor alloy. The continuous metal semiconductor alloy can be derived from either a semiconductor nanowire or an epitaxial grown semiconductor material. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each source and drain region, and a vertical pillar portion extending upward from the lower portion. The lower portion of the continuous metal semiconductor alloy and the vertical pillar portion are not separated by a material interface. Instead, the two portions of the continuous metal semiconductor alloy are of unitary construction, i.e., a single piece."
The patent application was filed on Aug. 26, 2008 (12/198,592). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,031&OS=8,169,031&RS=8,169,031
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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International Business Machines Assigned Patent for Dielectric Interconnect Structures and Methods for Forming the Same
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,169,077) developed by Chih-Chao Yang, Poughkeepsie, N.Y., Louis C. Hsu, Fishkill, N.Y., and Rajiv V. Joshi, Yorktown Heights, N.Y., for "dielectric interconnect structures and methods for forming the same."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Dielectric interconnect structures and methods for forming the same are provided. Specifically, the present invention provides a dielectric interconnect structure having a noble metal layer (e.g., Ru, Ir, Rh, Pt, RuTa, and alloys of Ru, Ir, Rh, Pt, and RuTa) that is formed directly on a modified dielectric surface. In a typical embodiment, the modified dielectric surface is created by treating an exposed dielectric layer of the interconnect structure with a gaseous ion plasma (e.g., Ar, He, Ne, Xe, N.sub.2, H.sub.2, NH.sub.3, and N.sub.2H.sub.2). Under the present invention, the noble metal layer could be formed directly on an optional glue layer that is maintained only on vertical surfaces of any trench or via formed in the exposed dielectric layer. In addition, the noble metal layer may or may not be provided along an interface between the via and an internal metal layer."
The patent application was filed on Aug. 4, 2008 (12/185,759). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,077&OS=8,169,077&RS=8,169,077
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Xerox Assigned Patent
ALEXANDRIA, Va., May 5 -- Xerox, Norwalk, Conn., has been assigned a patent (8,169,210) developed by Johann Junginger, Toronto, and Markus R. Silvestri, Fairport, N.Y., for a "contactless system and method for electrostatic sensing with a high spatial resolution."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "In the illustrated embodiment of the invention a scanning system is provided for scanning a chargeable surface for latent image detection. The chargeable surface is charged to a first potential, and a scanner probe is charged to a second potential within a predetermined potential difference from the first potential. The scanner probe is oscillated at a selected frequency and reads or measures the oscillation current that is induced from the oscillation and detects any latent images or other electrostatic distributions on the chargeable surface. A processor processes the probe measurements for determining the potential of a latent image on the chargeable surface based on the scanner probe readings."
The patent application was filed on April 7, 2009 (12/419,907). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,210&OS=8,169,210&RS=8,169,210
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Symbol Technologies Assigned Patent
ALEXANDRIA, Va., May 5 -- Symbol Technologies, Holtsville, N.Y., has been assigned a patent (8,169,188) developed by Eduard Kogan, Howard Beach, N.Y., and Vladimir Yakhnich, Brooklyn, N.Y., for a "battery pack with built in communication port."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A system and method for providing a communication port integral with a battery pack assembly is disclosed. The system provides a pathway between an external unit and a host unit via a printed circuit board of the battery pack. The battery pack can include communication ports mounted on the printed circuit board for interfacing with external units. The printed circuit board further includes a substrate(s) formed with a predetermined wiring pattern electrically and/or mechanically joined to the CPU of the host unit, as well as the battery cell(s)."
The patent application was filed on June 20, 2006 (11/425,250). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,188&OS=8,169,188&RS=8,169,188
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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International Business Machines Assigned Patent for Strained CMOS Device, Circuit and Method of Fabrication
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,169,025) developed by six co-inventors for a "strained CMOS device, circuit and method of fabrication." The co-inventors are Stephen W. Bedell, Yorktown Heights, N.Y., Kangguo Cheng, Albany, N.Y., Bruce B. Doris, Yorktown Heights, N.Y., Ali Khakifirooz, Albany, N.Y., Devendra K. Sadana, Yorktown Heights, N.Y., and Ghavam G. Shahidi, Yorktown Heights, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device and fabrication method include a strained semiconductor layer having a strain in one axis. A long fin and a short fin are formed in the semiconductor layer such that the long fin has a strained length along the one axis. An n-type transistor is formed on the long fin, and a p-type transistor is formed on the at least one short fin. The strain in the n-type transistor improves performance."
The patent application was filed on Jan. 19, 2010 (12/689,339). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,025&OS=8,169,025&RS=8,169,025
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Schering Assigned Patent
ALEXANDRIA, Va., May 5 -- Schering, Kenilworth, N.J., has been assigned a patent (8,168,641) developed by ten co-inventors for an aspartyl protease inhibitors. The co-inventors are Yusheng Wu, New York, Ulrich Iserloh, Hoboken, N.J., Jared N. Cumming, Garwood, N.J., Xiaoxiang Liu, River Vale, N.J., Robert D. Mazzola, Stewartsville, N.J., Zhong-Yue Sun, Parlin, N.J., Ying Huang, East Brunswick, N.J., Andrew Stamford, Chatham Township, N.J., Brian McKittrick, New Vernon, N.J., and Zhaoning Zhu, Plainsboro, N.J.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Disclosed are compounds of formula I ##STR00001## or a stereoisomer, tautomer, or pharmaceutically acceptable salt or solvate thereof, U, W, X, R.sup.1, R.sup.2, R.sup.6, R.sup.7, R.sup.30 and R.sup.31 are as described above in the specification. Also disclosed is the method of inhibiting aspartyl protease, and in particular, the methods of treating cardiovascular diseases, cognitive and neurodegenerative diseases. Also disclosed are methods of treating cognitive or neurodegenerative diseases using the compounds of formula I in combination with a cholinesterase inhibitor or a muscarinic m.sub.1 agonist or m.sub.2 antagonist."
The patent application was filed on June 7, 2007 (11/759,336). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168641.PN.&OS=PN/8168641&RS=PN/8168641
Written by Kusum Sangma; edited by Anand Kumar.
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Merck Sharp & Dohme Assigned Patent for Beta-amino Heterocyclic Dipeptidyl Peptidase Inhibitors for the Treatment of Diabetes
ALEXANDRIA, Va., May 5 -- Merck Sharp & Dohme, Rahway, N.J., has been assigned a patent (8,168,637) developed by six co-inventors for a "beta-amino heterocyclic dipeptidyl peptidase inhibitors for the treatment of diabetes." The co-inventors are Scott D. Edmondson, New York, Dooseop Kim, Westfield, N.J., Malcolm Maccoss, Freehold, N.J., Emma R. Parmee, Scotch Plains, N.J., Ann E. Weber, Scotch Plains, N.J., and Jinyou Xu, Scotch Plains, N.J.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is directed to compounds which are inhibitors of the dipeptidyl peptidase-IV enzyme ("DP-IV inhibitors") and which are useful in the treatment or prevention of diseases in which the dipeptidyl peptidase-IV enzyme is involved, such as diabetes and particularly type 2 diabetes. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which the dipeptidyl peptidase-IV enzyme is involved."
The patent application was filed on Jan. 27, 2010 (12/694,758). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168637.PN.&OS=PN/8168637&RS=PN/8168637
Written by Kusum Sangma; edited by Anand Kumar.
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Micron Technology Assigned Patent
ALEXANDRIA, Va., May 5 -- Micron Technology, Boise, Idaho, has been assigned a patent (8,168,502) developed by Leonard Forbes, Corvallis, Ore., Kie Y. Ahn, Chappaqua, N.Y., and Arup Bhattacharyya, Essex Junction, Vt., for a "tantalum silicon oxynitride high-K dielectrics and metal gates."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Electronic apparatus and methods of forming the electronic apparatus include a tantalum silicon oxynitride film on a substrate for use in a variety of electronic systems. The tantalum silicon oxynitride film may be structured as one or more monolayers. The tantalum silicon oxynitride film may be formed using a monolayer or partial monolayer sequencing process. Metal electrodes may be disposed on a dielectric containing a tantalum silicon oxynitride film."
The patent application was filed on Aug. 12, 2010 (12/855,556). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168502.PN.&OS=PN/8168502&RS=PN/8168502
Written by Kusum Sangma; edited by Anand Kumar.
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Wyeth Assigned Patent
ALEXANDRIA, Va., May 5 -- Wyeth, Madison, N.J., has been assigned a patent (8,168,672) developed by Bogdan Kazimierz Wilk, New City, N.Y., for a "thioamide derivatives as progesterone receptor modulators."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Thioamide compounds, and specifically, thioamide pyrrole compounds, and preparation thereof are provided. These thioamide compounds can be used as progesterone receptor modulators, in contraception, and in the treatment of progesterone-related maladies."
The patent application was filed on Feb. 2, 2010 (12/698,472). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168672.PN.&OS=PN/8168672&RS=PN/8168672
Written by Kusum Sangma; edited by Anand Kumar.
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Corning Assigned Patent
ALEXANDRIA, Va., May 5 -- Corning, Corning, N.Y., has been assigned a patent (8,168,514) developed by Sean Matthew Garner, Elmira, N.Y., Xinghua Li, Painted Post, N.Y., and Robert Stephen Wagner, Corning, N.Y., for a "laser separation of thin laminated glass substrates for flexible display applications."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of separating a sheet of coated brittle material comprises the steps of providing a sheet of layered brittle material comprising a brittle layer and a coating material adhered to a surface of the brittle layer and applying a laser along a separation line in the sheet, thereby cutting the coating material and separating the brittle layer by inducing a stress fracture therein."
The patent application was filed on Aug. 24, 2006 (11/509,448). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168514.PN.&OS=PN/8168514&RS=PN/8168514
Written by Kusum Sangma; edited by Anand Kumar.
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Eastman Kodak Assigned Patent
ALEXANDRIA, Va., May 5 -- Eastman Kodak, Rochester, N.Y., has been assigned a patent (8,168,546) developed by David H. Levy, Rochester, N.Y., for a "method for selective deposition and devices."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, side chains, or both backbone and side chains, multiple secondary or tertiary amide groups that are represented by the following acetamide structure: >N--C(.dbd.O)--. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material."
The patent application was filed on Nov. 20, 2009 (12/622,496). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168546.PN.&OS=PN/8168546&RS=PN/8168546
Written by Kusum Sangma; edited by Anand Kumar.
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International Business Machines Assigned Patent for Method for Forming an SOI Schottky Source/drain Device to Control Encroachment and Delamination of Silicide
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,168,503) developed by four co-inventors for a "method for forming an SOI schottky source/drain device to control encroachment and delamination of silicide." The co-inventors are Marwan H. Khater, Astoria, N.Y., Christian Lavoie, Ossining, N.Y., Bin Yang, Ossining, N.Y., and Zhen Zhang, Ossining, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of fabricating a Schottky field effect transistor is provided that includes providing a substrate having at least a first semiconductor layer overlying a dielectric layer, wherein the first semiconductor layer has a thickness of less than 10.0 nm. A gate structure is formed directly on the first semiconductor layer. A raised semiconductor material is selectively formed on the first semiconductor layer adjacent to the gate structure. The raised semiconductor material is converted into Schottky source and drain regions composed of a metal semiconductor alloy. A non-reacted semiconductor material is present between the Schottky source and drain regions and the dielectric layer."
The patent application was filed on March 18, 2010 (12/726,736). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168503.PN.&OS=PN/8168503&RS=PN/8168503
Written by Kusum Sangma; edited by Anand Kumar.
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Columbia University Assigned Patent
ALEXANDRIA, Va., May 5 -- Columbia University, New York, has been assigned a patent (8,168,786) developed by Joseph John Mann, Riverdale, N.Y., and J.S. Dileep Kumar, Fort Lee, N.J., for "radiolabeled compounds and uses thereof."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention relates to Radiolabeled Compounds and methods of use thereof for treating or preventing a psychiatric disorder in a subject, for stabilizing the mood of a subject having a mood disorder, or as imaging agents for a serotonin receptor. Compositions comprising an imaging-effective amount of a Radiolabeled Compound are also disclosed."
The patent application was filed on June 28, 2007 (11/823,641). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,786&OS=8,168,786&RS=8,168,786
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Abbott Laboratories Assigned Patent for Crystalline Anti-human IL-12 Antibodies
ALEXANDRIA, Va., May 5 -- Abbott Laboratories, Abbott Park, Ill., has been assigned a patent (8,168,760) developed by six co-inventors for "crystalline anti-human IL-12 antibodies." The co-inventors are David W. Borhani, Hartsdale, N.Y., Wolfgang Fraunhofer, Newton, Mass., Hans-Juergen Krause, Gruenstadt, Germany, Anette Koenigsdorfer, Ilvesheim, Germany, Gerhard Winter, Penzberg, Germany, and Stefan Gottschalk, Grunwald, Germany.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention relates to batch crystallization methods for crystallizing an anti-hIL-12 antibody that allows the production of the antibody on an industrial scale, antibody crystals obtained according to the methods, compositions containing the crystals, and methods of using the crystals and the compositions."
The patent application was filed on March 27, 2008 (12/079,434). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,760&OS=8,168,760&RS=8,168,760
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Canadus Power Systems Assigned Patent
ALEXANDRIA, Va., May 5 -- Canadus Power Systems, Warrensville Heights, Ohio, has been assigned a patent (8,169,194) developed by Roger Altman, Alexandria Bay, N.Y., for a "system and method for applying pulsation energy to online battery backup systems."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of applying pulsation energy to an online battery backup system including the steps of (1) sampling at least one voltage sampling circuit to monitor a float voltage drop across the terminals of each battery unit within a plurality of battery units; (2) selecting from among the plurality of battery units the unit having the greatest float voltage drop; (3) operating a pulse generation circuit to apply pulsation energy across the terminals of only the selected battery unit; and (4) ceasing to operate the pulse generation circuit in response to a predetermined trigger. A generally corresponding method may be performed on each battery cell within the plurality of battery units. Also, battery pulsation systems for an online battery backup system including means for applying pulsation energy across the terminals of only a selected battery unit or a selected battery cell."
The patent application was filed on July 18, 2008 (12/175,755). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,169,194&OS=8,169,194&RS=8,169,194
Written by Satyaban Rath; edited by Hemanta Panigrahi.
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Oxane Materials Assigned Patent
ALEXANDRIA, Va., May 5 -- Oxane Materials, Houston, has been assigned a patent (8,168,570) developed by five co-inventors for a "method of manufacture and the use of a functional proppant for determination of subterranean fracture geometries." The co-inventors are Andrew R. Barron, Houston, Robert D. Skala, Katy, Texas, Christopher E. Coker, Houston, Dilip K. Chatterjee, Rochester, N.Y., and Yuming Xie, Sugar Land, Texas.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Proppants having added functional properties are provided, as are methods that use the proppants to track and trace the characteristics of a fracture in a geologic formation. Information obtained by the methods can be used to design a fracturing job, to increase conductivity in the fracture, and to enhance oil and gas recovery from the geologic formation. The functionalized proppants can be detected by a variety of methods utilizing, for example, an airborne magnetometer survey, ground penetrating radar, a high resolution accelerometer, a geophone, nuclear magnetic resonance, ultra-sound, impedance measurements, piezoelectric activity, radioactivity, and the like. Methods of mapping a subterranean formation are also provided and use the functionalized proppants to detect characteristics of the formation."
The patent application was filed on May 19, 2009 (12/468,088). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168570.PN.&OS=PN/8168570&RS=PN/8168570
Written by Kusum Sangma; edited by Anand Kumar.
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Merk Sharp & Dohme Assigned Patent
ALEXANDRIA, Va., May 5 -- Merk Sharp & Dohme, Rahway, N.J., has been assigned a patent (8,168,649) developed by ten co-inventors for a "niacin receptor agonists, compositions containing such compounds and methods of treatment." The co-inventors are Subharekha Raghavan, Teaneck, N.J., Steven L. Colletti, Princeton Junction, N.J., Fa-Xiang Ding, Staten Island, N.Y., Hong Shen, West Windsor, N.J., James R. Tata, Westfield, N.J., Ashley Rouse Lins, Edison, N.J., Abigail Lee Smenton, Brooklyn, N.Y., Weichun Chen, Livingston, N.J., Darby Rye Schmidt, Clark, N.J., and George Scott Tria, La Jolla, Calif.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention encompasses compounds of Formula (I): as well as pharmaceutically acceptable salts and hydrates thereof, that are useful for treating atherosclerosis, dyslipidemias and the like. Pharmaceutical compositions and methods of use are also included. ##STR00001##."
The patent application was filed on June 26, 2006 (11/922,629). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168649.PN.&OS=PN/8168649&RS=PN/8168649
Written by Kusum Sangma; edited by Anand Kumar.
***
Novellus Systems Assigned Patent
ALEXANDRIA, Va., May 5 -- Novellus Systems, San Jose, Calif., has been assigned a patent (8,168,540) developed by Jonathan Reid, Sherwood, Ore., Sesha Varadarajan, Tualatin, Ore., and Ugur Emekli, New York, for "methods and apparatus for depositing copper on tungsten."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Apparatus and methods for depositing copper on tungsten are presented. The invention finds particular use in the semiconductor industry for depositing copper seed layers onto fields or through silicon vias having tungsten barrier layers, both reducing cost and complexity of existing methods."
The patent application was filed on Dec. 29, 2009 (12/649,237). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168540.PN.&OS=PN/8168540&RS=PN/8168540
Written by Kusum Sangma; edited by Anand Kumar.
***
Honeywell International Assigned Patent
ALEXANDRIA, Va., May 5 -- Honeywell International, Morristown, N.J., has been assigned a patent (8,168,837) developed by Daniel C. Merkel, West Seneca, N.Y., Konstantin A. Pokrovski, Orchard Park, N.Y., and Hsueh Sung Tung, Getzville, N.Y., for a "process for separating hydrogen fluoride from organic feedstocks."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Provided is a process for purifying an organic feedstock comprising (a) distilling a raw organic feedstock comprising hydrogen fluoride, 2-chloro-1,1,1,2-tetrafluoropropane, and 2-chloro-3,3,3-trifluoropropene to produce a first distillate stream comprising an azeotrope-like composition of 2-chloro-1,1,1,2-tetrafluoropropane, 2-chloro-3,3,3-trifluoropropene, and hydrogen fluoride, and a first bottoms stream rich in hydrogen fluoride; (b) cooling said first distillate stream to produce an intermediate composition comprising an organic layer rich in 2-chloro-1,1,1,2-tetrafluoropropane and 2-chloro-3,3,3-trifluoropropene, and an acid layer rich in hydrogen fluoride; and, optionally but preferably, (c) distilling said organic layer to produce a second distillate stream comprising an azeotrope-like composition of 2-chloro-1,1,1,2-tetrafluoropropane, 2-chloro-3,3,3-trifluoropropene, and hydrogen fluoride, and a second bottoms stream comprising a purified organic feedstock substantially free of hydrogen fluoride."
The patent application was filed on May 12, 2009 (12/464,666). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,837&OS=8,168,837&RS=8,168,837
Written by Satyaban Rath; edited by Hemanta Panigrahi.
***
International Business Machines Assigned Patent
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,168,542) developed by Kuan-Neng Chen, White Plains, N.Y., John Christopher Arnold, North Chatham, N.Y., and Niranjana Ruiz, White Plains, N.Y., for "methods of forming tubular objects."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A tubular object is fabricated by a method comprising the steps of providing a first layer, forming a second layer on the first layer, and then patterning the second layer to form a raised feature with one or more sidewalls. Subsequently, the first layer is processed such that components of the first layer deposit on the one or more sidewalls of the raised feature."
The patent application was filed on Jan. 3, 2008 (11/968,771). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168542.PN.&OS=PN/8168542&RS=PN/8168542
Written by Kusum Sangma; edited by Anand Kumar.
***
Earth Renewal Group Assigned Patent
ALEXANDRIA, Va., May 5 -- Earth Renewal Group, Salt Lake City, has been assigned a patent (8,168,847) developed by George G. Foster, Salt Lake City, Frederick P. Kesler, Salt Lake City, and Malcolm Draper, New York, for an "aqueous phase oxidation process."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An improved oxidization process may be used to oxidize a wide variety of feedstocks. Oxidation takes place in a reactor where the feedstock is mixed with an oxidizing acid, such as nitric acid. The reaction mixture may also include a secondary oxidizing acid such as sulfuric acid as well as water and/or dissolved and mechanically mixed oxygen gas. The reactor may be maintained at an elevated pressure such as at least approximately 2070 kPa or desirably at least approximately 2800 kPa. The temperature of the reaction mixture may be maintained at no more than 210.degree. C."
The patent application was filed on April 1, 2009 (12/416,438). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,847&OS=8,168,847&RS=8,168,847
Written by Satyaban Rath; edited by Hemanta Panigrahi.
***
Columbia University Assigned Patent
ALEXANDRIA, Va., May 5 -- Columbia University, New York, has been assigned a patent (8,168,534) developed by Jinyao Tang, New York, and Samuel Jonas Wind, White Plains, N.Y., for "methods of fabricating electrodes and uses thereof."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention relates to methods for fabricating nanoscale electrodes separated by a nanogap, wherein the gap size may be controlled with high precision using a self-aligning aluminum oxide mask, such that the gap width depends upon the thickness of the aluminum oxide mask. The invention also provides methods for using the nanoscale electrodes."
The patent application was filed on Nov. 12, 2010 (12/945,424). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8168534.PN.&OS=PN/8168534&RS=PN/8168534
Written by Kusum Sangma; edited by Anand Kumar.
***
General Electric Assigned Patent for Electric Discharge Machining Die Sinking Device
ALEXANDRIA, Va., May 5 -- General Electric, Schenectady, N.Y., has been assigned a patent (8,168,913) developed by Yuefeng Luo, Schenectady, N.Y., for an "electric discharge machining die sinking device."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "An EDM die sinking device includes a tank for holding a fluid, and at least one electrode in the tank having a shape for imparting to a first portion of a workpiece. A workpiece holder positions the workpiece at least partially immersed in the fluid and alternately moves the workpiece between an inoperable position and a first operable position of the first electrode at which electric discharge machining occurs on the first portion. A pulse generator creates an electric discharge between the first portion and the first electrode to remove material from the first portion in response to the workpiece being in the first operable position. Movement of the workpiece from the electrode flushes particle containing fluid away from the workpiece and the electrode. A segmented electrode includes a separate pulse generator for each segment may also be employed."
The patent application was filed on May 28, 2009 (12/473,318). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,168,913&OS=8,168,913&RS=8,168,913
Written by Satyaban Rath; edited by Hemanta Panigrahi.
***
International Business Machines Assigned Patent for Structure and Method of Forming Enhanced Array Device Isolation for Implanted Plate EDRAM
ALEXANDRIA, Va., May 5 -- International Business Machines, Armonk, N.Y., has been assigned a patent (8,168,507) developed by six co-inventors for a "structure and method of forming enhanced array device isolation for implanted plate EDRAM." The co-inventors are Herbert L. Ho, Hopewell Junction, N.Y., Naoyoshi Kusaba, Hopewell Junction, N.Y., Karen A. Nummy, Hopewell Junction, N.Y., Carl J. Radens, Hopewell Junction, N.Y., Ravi M. Todi, Hopewell Junction, N.Y., and Geng Wang, Hopewell Junction, N.Y.
The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming a memory device in a semiconductor on insulator substrate is provided, in which a protective oxide that is present on the sidewalls of the trench protects the first semiconductor layer, i.e., SOI layer, of the semiconductor on insulator substrate during bottle etching of the trench. In one embodiment, the protective oxide reduces back channel effects of the transistors to the memory devices in the trench that are formed in the semiconductor on insulator substrate. In another embodiment, a thermal oxidation process increases the thickness of the buried dielectric layer of a bonded semiconductor on insulator substrate by oxidizing the bonded interface between the buried dielectric layer and at least one semiconductor layers of the semiconductor on insulator substrate. The increased thickness of the buried dielectric layer may reduce back channel effects in devices formed on the substrate having trench m
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