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UMOS VII-H-based 30V power mosfets bridge...(Electronics Weekly (UK) Via Acquire Media NewsEdge) UMOS VII-H-based 30V power mosfets bridge standards gap Toshiba Electronics Europe has extended its family of 30V power mosfets based on a UMOS VII-H semiconductor process. The new devices in the TPCx family include nine devices in SOP-8 and the TSON advance package formats. TSON is intended to bridge the gap between industrial standard SOT23 and SOP8 package formats, with a 3.3x3.3mm package format. All of the mosfets have a maximum VDSS rating of 30V and a maximum VGSS rating of ±20V. Typical RDS(ON) values (VGS = 10V) range from 20m? down to just 6.0m? depending on the device chosen. TPC806x-H and TPC822x-H devices are supplied in SOP-8 and dual Chip SOP-8 packages respectively. TPCC806x-H parts in the TSON advanced package achieve a power dissipation of 1.9W, due to their metal base plates. www.toshiba-components.com Low-voltage dual mosfet built forbrushless motor control Diodes is offering a complementary dual mosfet for use in low-voltage, single- and three-phase brushless DC motor control applications. The DMC4040SSD features matched N-channel and P-channel Rds(on) performances which helps to balance and minimise DC losses in motor loads. The mosfets are rated with a Vds of 40V, making them suitable for 24V DC motor systems controlling cooling and extractor fans, pumps, compressors and printer heads. Rds(on) is 25mO at a Vgs of 10V. The DMC4040SSD has a continuous current rating of 6A and a pulsed current rating of 29A, enabling motor torque currents of up to five times the continuous current to be supported during motor start up or stalled motor conditions. The devices come in the industry-standard SO-8 package. www.diodes.com H-bridge transformer driver works for isolated power supplies Maxim Integrated Products has an H-bridge transformer driver with a wide input-voltage range for isolated power supplies. The MAX13256 can be used to drive a transformer's primary coil with up to 300mA of current from an 8V to 36V DC supply which can deliver up to 10W of isolated power. A benefit is that users can choose their own transformer winding ratio which defines the output voltage, thus allowing the selection of virtually any isolated output voltage. The devices integrate protection features that prevent system-level failures. Adjustable current limiting allows indirect limiting of secondary-side load currents. An overcurrent limit is set by an external resistor over the 215mA to 650mA (typ) range. An active-low FAULT output asserts when the device detects an overtemperature or overcurrent condition. This integrated thermal and short-circuit protection ensures safe operation and reduces both cost and PCB space over discrete solutions. The MAX13256 is available in a 10-pin TDFN and is specified over the -40°C to +125°C automotive temperature range. www.maxim-ic.com 100V high speed synchronous N-channel mosfet drivers Linear Technology's H-grade version of the LTC4444/-5 100V input supply voltage, synchronous mosfet gate driver is designed to drive upper and lower power N-channel mosfets in synchronous rectified converter topologies. The H-grade chip operates over a junction temperature range of -40°C to 150°C, compared to the I-grade version's -40°C to 125°C operating temperature range. Adaptive shoot-through protection is integrated to minimise dead time while preventing both the upper and lower mosfets from conducting simultaneously. These powerful drivers can source up to 1.4A with a 1.5ohm pull-down impedance for driving the top mosfet and a source current of 1.75A with a 0.75Ohm pull-down impedance for the bottom mosfet. It can drive multiple mosfets in parallel for higher current applications. Switching losses are minimized by the fast 8ns rise, 5ns fall time of the top mosfet and 6ns rise, 3ns fall time of the bottom mosfet when driving a 1,000pF load. Both parts are available in a thermally enhanced MSOP-8 package. www.linear.com/4444 Discrete 1200V IGBTs are high gain devices IXYS has expanded its XPT IGBT product line with the release of discrete high-gain 1200V products. The new devices feature high current ratings (105A - 160A, Tc = 25 deg C) and are optimised for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. Electrical characteristics include low collector to emitter saturation voltages (Vcesat as low as 3.0V), low typical current fall times (tfi as low as 57ns), and low turn-off energy per pulse values (Eoff as low as 1.2mJ, Tj = 25 deg C). The IGBTs retain a positive temperature coefficient of its collector to emitter saturation voltage for ease of parallel configuration. The 1200V XPT devices are available with IXYS' Sonic-FRD anti-parallel ultra-fast diodes (Sonic-FRD - Suffix H1, ie. IXYN82N120C3H1). Soft recovery characteristics of the Sonic-FRD co-packed diode allows the XPT IGBT to be switched on at very high di/dt's regardless of low current and temperature conditions. www.ixys.com Current mirror with switch controller can monitor 25A ON Semiconductor has introduced the CAT2300 current mirror with switch controller, that it says can be combined with the company's NTMFS4833NS or NTMFS4854NS SENSEFET power mosfet devices as a current monitor. Control and matching of the SENSEFET's SENSE output with the KELVIN voltage leads by the CAT2300 ensures accurate current monitoring over the SENSEFET's entire operating range. The current mirror offers a single chip alternative to a discrete circuit approach and is able to provide sensorless precision current measurement of 0.9V to 5V power supply rails. The device performs current mirroring to 70mA - which equates to 25A of measured current. A soft-start function is also included. Current consumption is less than 1µA in shutdown mode supporting long life in battery powered applications. Housed in a space saving, low profile 2x3mm TDFN-8 package, the CAT2300 is suitable for use over the full -40ºC to +85ºC operating temperature range. www.onsemi.com (c) 2011 Reed Business Information - UK. All Rights Reserved. |