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U.S. Patents Awarded to Inventors in Maine (Sept. 5)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., Sept. 5 -- The following federal patents were awarded to inventors in Maine. *** Maine Inventor Develops Patent for Cutting System for Fouling Removal from Jet Drive Water Intake ALEXANDRIA, Va., Sept. 5 -- Richard E. Wengren Jr., South Freeport, Maine, has developed a patent (8,007,329) for a "cutting system for fouling removal from jet drive water intake." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A cutting system for fouling removal systems used in water-jet drive systems is described. The cutting system includes an actuation system for facilitating movement of a cutting blade that resides outside of the water flow area for the intake of the jet drive system. The cutting system also includes one or more guide tines to restrict movement of the cutting blade away from the surface of the grate. An optional cutter stud is formed as a single structure including two members forming a single angle, one member for mounting and the other for cutting. The single-angled configuration maximizes cutting efficiency while minimizing disruption of water flow to the propulsion system." The patent application was filed on May 27, 2009 (12/473,008). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,007,329.PN.&OS=PN/8,007,329&RS=PN/8,007,329 Written by Anjali Jha; edited by Jaya Anand. *** U.S. Department of Commerce Assigned Patent ALEXANDRIA, Va., Sept. 5 -- The U.S. Department of Commerce has been assigned a patent (8,007,742) developed by Stephen E. Long, Gaithersburg, Md., David M. Bunk, Bethesda, Md., and Mariana Arce-Osuna, Queretaro, Maine, for an IRIS digester-evaporator interface. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A digester-evaporator for partially digesting a sample and for evaporating the solvent after partial digestion. The digester includes at least one reaction coil; a heating element arranged along a portion of the reaction coil; at least a portion of the reaction coil proximate to its output being preheated by the heating element to a degree sufficient to convert a partially digested sample into vapor; a collector spoon with carrier water for collecting sample vapor; and an evaporator portion including an evaporation chamber including a substantially vertically-oriented tube The collector spoon is arranged in the top of the substantially vertically-oriented tube, and a gas supply tube for supplying a preheated gas provided in a top of the substantially vertically-oriented tube so as to create a cyclonic gas flow into the chamber and carry the sample to a container area in a bottom portion of the chamber." The patent application was filed on May 23, 2006 (11/438,390). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,007,742.PN.&OS=PN/8,007,742&RS=PN/8,007,742 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** National Semiconductor Assigned Patent ALEXANDRIA, Va., Sept. 5 -- National Semiconductor, Santa Clara, Calif., has been assigned a patent (8,007,675) developed by Andre P. Labonte, Lewiston, Maine, and Craig Richard Printy, Buxton, Maine, for a "system and method for controlling an etch process for a single crystal having a buried layer." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A system and method is disclosed that terminates an etch process of a semiconductor crystal material at a precisely located depth. The semiconductor crystal is made of a first material and has a buried layer of a second material that is stoichiometrically different than the first material. The buried layer is located at a depth in the first material at which it is desired to terminate the etch process. During the etch process an optical emission spectrum of the first material is monitored. The intensity of the spectrum decreases when the etch process reaches the second material of the buried layer. The etch process is terminated when the decrease in spectrum intensity is detected." The patent application was filed on July 11, 2005 (11/178,557). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,007,675&OS=8,007,675&RS=8,007,675 Written by Satyaban Rath; edited by Hemanta Panigrahi. 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