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U.S. Patents Awarded to Inventors in New York (Aug. 8)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., Aug. 8 -- The following federal patents were awarded to inventors in New York. *** General Electric Assigned Patent ALEXANDRIA, Va., Aug. 8 -- General Electric, Schenectady, N.Y., has been assigned a patent (79,88,424) developed by Jonathon E. Slepski, Clifton, N.Y., and Andrey A. Chernobrovkin, Clifton Park, N.Y., for a "bucket for the last stage of a steam turbine." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A turbine bucket including a bucket airfoil having an airfoil shape is provided. The airfoil shape has a nominal profile according to the tables set forth in the specification. The X and Y coordinate are smoothly joined by an arc of radius R defining airfoil profile sections at each distance Z. The profile sections at the Z distances are joined smoothly with one another to form a complete airfoil shape." The patent application was filed on March 25, 2009 (12/410,856). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=79,88,424.PN.&OS=PN/79,88,424&RS=PN/79,88,424 Written by Ruby Maibam; edited by Jaya Anand. *** General Electric Assigned Patent for Polyarylether Compositions Bearing Zwitterion Functionalities ALEXANDRIA, Va., Aug. 8 -- General Electric, Niskayuna, N.Y., has been assigned a patent (7,985,339) developed by four co-inventors for a "polyarylether compositions bearing zwitterion functionalities." The co-inventors are Yanshi Zhang, Shaker Heights, Ohio, Gary William Yeager, Rexford, N.Y., Hongyi Zhou, Niskayuna, N.Y., and Daniel Steiger, Bedminster, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for making a polysulfone having zwitterionic functionality comprising reacting a piperazine amine functionalized polysulfone with sultone is described as are blends with other polymers. Membranes containing polysulfones having zwitterionic functionality are also provided. Membranes thus formed are used in hemodialysis, hemofiltration, and water purification." The patent application was filed on Aug. 25, 2008 (12/197,374). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,339.PN.&OS=PN/7,985,339&RS=PN/7,985,339 Written by Ruby Maibam; edited by Jaya Anand. *** U.S. Army Assigned Patent ALEXANDRIA, Va., Aug. 8 -- The U.S. Army has been assigned a patent (7,988,930) developed by nine co-inventors for a portable chemical sterilizer. The co-inventors are Christopher Doona, Oxford, Mass., Maria Curtin, Easton, Mass., Florence Feeherry, Wellesley, Mass., Satish Kandlikar, Rochester, N.Y., David Baer, San Antonio, Kenneth Kustin, San Diego, Irwin A. Taub, Framingham, Mass., Barbara Taub, legal representative, Framingham, Mass., and Albert T. McManus, Floresville, Texas. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A portable, lightweight, easy-to-carry, reusable, durable, and environmentally-friendly assembly for sterilizing contaminated equipment using conditions of a chemical sterilant, heat, and humidity generated in situ without requiring external electricity, fuels, or other exogenous energy sources for operation. The carry assembly includes a plastic carry-case or insulated aluminum pressure vessel having an inner chamber for accepting microbiologically contaminated objects, a vessel disposed in the chamber for serving as a reaction chamber and/or boiler, a chemical combination which upon mixing generates at least minimally sufficient conditions of the sterilant, heat, and humidity to effect sterilization of the objects, and outlet valves mounted on the carry-case for controllably venting pressures above ambient air pressure." The patent application was filed on June 4, 2009 (12/478,155). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988930.PN.&OS=PN/7988930&RS=PN/7988930 Written by Kusum Sangma; edited by Anand Kumar. *** QUBICAAMF Worldwide Assigned Patent ALEXANDRIA, Va., Aug. 8 -- QUBICAAMF Worldwide, Mechanicsville, Va., has been assigned a patent (7,988,898) developed by four co-inventors for a "method of manufacturing a bowling pin." The co-inventors are Wayne White, Lowville, N.Y., Joe Infantino, Chappaqua, N.Y., Rodney C. Mallette, Brantingham, N.Y., and Ron Mizzi, Glenfield, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A bowling pin including a body having a head, a neck, a ball line portion, and a base all integrally formed of a synthetic material. The body includes a hollow area and a longitudinal axis of the hollow area extends generally perpendicularly to a substantially planar bottom surface of the base. A method of manufacturing a bowling pin includes providing a mold shell having a mold cavity shaped substantially as a bowling pin, disposing a mandrel inside a mold cavity, introducing material into the mold cavity, cooling the material inside the mold cavity, removing the mandrel from the mold cavity, removing the material from the mold cavity, and cooling the material outside the mold cavity." The patent application was filed on Oct. 20, 2006 (11/551,522). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988898.PN.&OS=PN/7988898&RS=PN/7988898 Written by Kusum Sangma; edited by Anand Kumar. *** Evonik Degussa Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Evonik Degussa, Parsippany, N.J., has been assigned a patent (7,985,292) developed by six co-inventors for a "precipitated silica for thickening and creating thixotropic behavior in liquid systems." The co-inventors are Christian Panz, Wesseling-Berzdorf, Germany, Karl Meier, Alfter, Germany, James Toth, Jersey City, N.Y., Guido Titz, Heimbach, Germany, Matt Romaine, Franklin Park, N.J., and Mario Scholz, Gruendau, Germany. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A precipitated silica having a d.sub.50-value of from 150 to 2000 nm, a d.sub.90-value of from 500 to 7000 nm, a silanol group density of from 2.5 to 8 OH/nm.sup.2, and a modified tapped density of less than or equal to 70 g/l is useful for thickening and providing thixotropy in liquid systems and shows superior efficiency at thickening and creating thixotropy compared to existing grades of precipitated silica. The precipitated silica functions best as a thixotrope in non-polar or intermediate polar liquid systems such as unsaturated polyester (UPE) resin systems." The patent application was filed on Nov. 26, 2007 (11/944,851). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=79,85,292.PN.&OS=PN/79,85,292&RS=PN/79,85,292 Written by Ruby Maibam; edited by Jaya Anand. *** Honeywell International Assigned Patent for Solvent Compositions Containing Chlorofloroolefins or Fluoroolefins ALEXANDRIA, Va., Aug. 8 -- Honeywell International, Morristown, N.J., has been assigned a patent (7,985,299) developed by four co-inventors for a "solvent compositions containing chlorofloroolefins or fluoroolefins." The co-inventors are Robert C. Johnson, Lancaster, N.Y., Hsueh Sung Tung, Getzville, N.Y., Rajiv Ratna Singh, Getzville, N.Y., and Ian Shankland, Randolph, N.J. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Compositions and methods based on the use of fluoroalkene containing from 3 to 4 carbon atoms and at least one carbon-carbon double bond, such as HFO-1214, HFO-HFO-1233, or HFO-1354, having properties highly beneficial in solvent cleaning applications." The patent application was filed on Feb. 9, 2009 (12/368,094). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=79,85,299.PN.&OS=PN/79,85,299&RS=PN/79,85,299 Written by Ruby Maibam; edited by Jaya Anand. *** Stryker Spine Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Stryker Spine, France, has been assigned a patent (7,988,625) developed by Mahmoud F. Abdelgany, Rockaway, N.J., and Gregory Martin, New York, for a "surgical retractor with removable scissor arms." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A retractor having interchangeable or replaceable blades facilitates the expansion of a surgical site below an incision in the skin, and establishes a work-through surgical space. The retractor includes a frame connected to two collar arms, a pair of blades connected to the collar arms, a sheath for encompassing the blades and providing a circumscribed working space, and a device for rotating the collar arms, thereby displacing the blades and any tissue surrounding them." The patent application was filed on Jan. 12, 2007 (11/652,810). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=79,88,625&OS=79,88,625&RS=79,88,625 Written by Rajat Puri; edited by Jaya Anand. *** Novasterilis Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Novasterilis, Lansing, N.Y., has been assigned a patent (7,988,892) developed by Anthony R. Eisenhut, Lansing, N.Y., J. Anastasia Kazenski, Ithaca, N.Y., and Renee A. Christopher, Dryden, N.Y., for a "preparation and sterilization of green state devices using a supercritical fluid sterilant." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention relates to a method for forming a molded article during sterilization and under high pressure utilizing a supercritical fluid as a sterilization fluid, whereby the pressurization and depressurization rates are controlled to form molded articles." The patent application was filed on Nov. 25, 2008 (12/277,425). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988892.PN.&OS=PN/7988892&RS=PN/7988892 Written by Kusum Sangma; edited by Anand Kumar. *** Cytec Technology Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Cytec Technology, Wilmington, Del., has been assigned a patent (7,988,863) developed by Howard Heitner, Tuckahoe, N.Y., for a "silane substituted polyalkylene oxide reagents and methods of using for preventing or reducin aluminosilicate scale in industrial processes." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Materials and methods are provided whereby polymers with least 0.5 mole % of the pendant group or end group containing --Si(OR'').sub.3 are used to control aluminosilicate scaling in an industrial process having an alkaline process stream such as a pulping mill process stream or a high level nuclear waste processing plant. When materials of the present invention are added to the alkaline process stream, they reduce and even completely prevent formation of aluminosilicate scale on equipment surfaces such as evaporator walls and heating surfaces. The present materials are effective at treatment concentrations that make them economically practical." The patent application was filed on Jan. 21, 2010 (12/691,017). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988863.PN.&OS=PN/7988863&RS=PN/7988863 Written by Kusum Sangma; edited by Anand Kumar. *** New York, Hong Kong Inventors Develop Patent for Closeable Food Bag ALEXANDRIA, Va., Aug. 8 -- Gordon Sussman, New York, and Tang Suk Man, Hong Kong, have developed a patent (7,988,359) for a closeable food bag. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The bag has a back panel, a front panel, an upper panel having an upper panel body and a flap and a floor panel. The back panel has a handle opening near the top of the panel. The front panel is shorter than the back panel and is connected to the back panel at the sides of the panel. The upper panel body is sealed to the back panel below the back panel handle, below the upper panel handle and above the flap fold line to form a bag top. The heat sealing desirably forms a seal strip that extends across the width of the bag below the handles and above the flap fold line to connect the upper panel body to the back panel. The top of the bag folds back away from the bag central opening so the handles are not soiled during loading." The patent application was filed on Feb. 12, 2008 (12/069,920). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7988359.PN.&OS=PN/7988359&RS=PN/7988359 Written by Ankresh Ranjan; edited by Jaya Anand. *** General Electric Assigned Patent ALEXANDRIA, Va., Aug. 8 -- General Electric, Niskayuna, N.Y., has been assigned a patent (7,989,095) developed by Luana Emiliana Iorio, Clifton Park, N.Y., and Pazhayannur Ramanathan Subramanian, Niskayuna, N.Y., for a "magnetic layer with nanodispersoids having a bimodal distribution." The abstract of the patent published by the U.S. Patent and Trademark Office states: "An article comprising a multilayered structure comprising a series of magnetic layers is provided. The magnetic layers comprise a magnetic material, and an insulating layer is disposed between successive magnetic layers. Each magnetic layer has a thickness of at least about 2 micrometers and magnetic material has an average grain size less than 200 nm. Also provided is a method for making the article." The patent application was filed on Dec. 28, 2004 (11/023,736). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,095&OS=7,989,095&RS=7,989,095 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Eastman Kodak Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Eastman Kodak, Rochester, N.Y., has been assigned a patent (7,989,146) developed by Mitchell S. Burberry, Webster, N.Y., and Lee W. Tutt, Webster, N.Y., for a "Component fabrication using thermal resist materials." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for producing a patterned material for electronic or photonic circuits, comprising the steps of: p) providing a substrate; q) coating the substrate with a polymer layer; r) coating a thermal resist solution over the polymer layer to form a thermal resist layer, wherein the polymer layer is substantially immiscible in the thermal resist solution; s) exposing predetermined areas of the thermal resist layer, corresponding to a desired image pattern, using infrared light; t) removing portions of the thermal resist layer corresponding to a desired image pattern, using a developer; u) removing the polymer layer where the thermal resist layer has been previously removed and undercutting a portion of the remaining thermal resist layer by an etching process; v) depositing a material using a substantially anisotropic process; and removing the remaining thermal resist layer and any overlying material with a solvent for the polymer or thermal resist layers leaving the material in a desired pattern." The patent application was filed on Oct. 9, 2007 (11/869,008). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,146&OS=7,989,146&RS=7,989,146 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** General Electric Assigned Patent ALEXANDRIA, Va., Aug. 8 -- General Electric, Niskayuna, N.Y., has been assigned a patent (7,989,118) developed by eight co-inventors for a "system and method for manufacturing fuel cell stacks." The co-inventors are Richard Scott Bourgeois, Albany, N.Y., Richard Louis Hart, Broadalbin, N.Y., Sauri Gudlavalleti, Hyderabad, India, Shu Ching Quek, Clifton Park, N.Y., Andrew Philip Shapiro, Schenectady, N.Y., Rong Fan, Rancho Palos Verdes, Calif., Dacong Weng, Rancho Palos Verdes, Calif., and Xiwang Qi, Torrance, Calif. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of manufacturing a fuel cell stack is provided. The method provides forming an inspectable preassembly of multiple fuel cell assemblies that may be termed a pseudostack. Each fuel cell in the pseudostack has permanent electrical interconnections and sealing connections on only one of the two electrodes, namely an anode layer or a cathode layer. For example, an anode interconnect may be firmly attached to the anode layer by means of a bonding agent and a sealing agent used to seal passages on the anode layer of the fuel cell. Alternatively, seals and permanent electrical connections may be made on the cathode layer of the fuel cell, and not on the anode layer." The patent application was filed on June 1, 2010 (12/791,266). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,118&OS=7,989,118&RS=7,989,118 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Xerox Assigned Patent for Metal Mercaptoimidazoles Containing Photoconductors ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,989,126) developed by four co-inventors for "metal mercaptoimidazoles containing photoconductors." The co-inventors are Jin Wu, Webster, N.Y., Markus R. Silvestri, Fairport, N.Y., Sherri A. Colon, Webster, N.Y., and Daniel V. Levy, Philadelphia. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer, and where the at least one charge transport layer and the photogenerating layer contain a metal mercaptoimidazole." The patent application was filed on April 30, 2008 (12/112,206). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,126&OS=7,989,126&RS=7,989,126 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Sulzer Metco (US) Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Sulzer Metco (US), Westbury, N.Y., has been assigned a patent (7,989,023) developed by Felix Muggli, Winterthur, Switzerland, Marc Heggemann, Winterthur, Switzerland, and Ronald J. Molz, Mount Kisco, N.Y., for a "method of improving mixing of axial injection in thermal spray guns." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Method for performing a thermal spray process. Method includes heating and/or accelerating a gas to form an effluent gas stream, feeding a particulate-bearing carrier stream through an axial injection port into the effluent gas stream to form a mixed stream, in which the axial injection port includes a plurality of chevrons located at a distal end of said axial injection port, and impacting the mixed stream on a substrate to form a coating." The patent application was filed on Nov. 2, 2010 (12/938,051). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,023&OS=7,989,023&RS=7,989,023 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Xerox Assigned Patent for Urea Resin Containing Photogenerating Layer Photoconductors ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,989,128) developed by Daniel V. Levy, Philadelphia, Liang-Bih Lin, Rochester, N.Y., and Jin Wu, Webster, N.Y., for "urea resin containing photogenerating layer photoconductors." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer comprised of at least one charge transport component, and wherein the photogenerating layer contains a urea resin." The patent application was filed on March 31, 2008 (12/059,546). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,128&OS=7,989,128&RS=7,989,128 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Honeywell International Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Honeywell International, Morristown, N.J., has been assigned a patent (7,985,355) developed by Matthew H. Luly, Hamburg, N.Y., Rajiv R. Singh, Getzville, N.Y., and Robert G. Richard, Hamburg, N.Y., for "compositions containing sulfur hexafluoride and uses thereof." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for suppressing an electric arc or corona discharge includes providing a device capable of storing, transmitting, or generating an electrical current or field; and enveloping at least a portion of said device with a dielectric gas consisting essentially of: sulfur hexafluoride; a second component selected from the group consisting of nitrous oxide; carbon dioxide; trifluoromethane (R32); trifluoroiodomethane; octafluoropropane (R218); 1,1,1,2,2-pentafluoroethane (R125); propane (R290); 1,1,1,2-tetrafluoropropene (HFO-1234yf); 1,2,3,3-tetrafluoro-2-propene (HFO-1234yc); 1,1,3,3-tetrafluoro-2-propene (HFO-1234zc); 1,1,1,3-tetrafluoro-2-propene (HFO-1234ze); 1,1,2,3-tetrafluoro-2-propene (HFO-1234ye); 1,1,1,2,3-pentafluoropropene (HFO-1225ye); 1,1,2,3,3-pentafluoropropene (HFO-1225yc); 1,1,1,3,3-pentafluoropropene (HFO-1225zc); (Z)1,1,1,3-tetrafluoropropene (HFO-1234zeZ); (Z)1,1,2,3-tetrafluoro-2-propene (HFO-1234yeZ); (E)1,1,1,3-tetrafluoropropene (HFO-1234zeE); (E)1,1,2,3-tetrafluoro-2-propene (HFO-1234yeE); (Z)1,1,1,2,3-pentafluoropropene (HFO-1225yeZ); (E)1,1,1,2,3-pentafluoropropene (HFO-1225yeE) and combinations of two or more of these; and optionally, an additive selected from the group consisting of stabilizers, metal passivators, corrosion inhibitors, and lubricants." The patent application was filed on March 22, 2010 (12/728,371). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=7,985,355.PN.&OS=PN/7,985,355&RS=PN/7,985,355 Written by Shabnam Sheikh; edited by Jaya Anand. *** Global OLED Technology Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Global OLED Technology, Herndon, Va., has been assigned a patent (7,989,021) developed by Michael Long, Hilton, N.Y., and Bruce E. Koppe, Caledonia, N.Y., for a "vaporizing material at a uniform rate." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of vaporizing material at a uniform rate for forming a layer on a substrate includes feeding a column of vaporizable material from a temperature controlled region maintained below the vaporizable material's effective vaporization temperature to a source of vaporization energy, wherein the volume of the column can vary during vaporization; and providing a source of vaporization energy delivering a constant heat flux to the surface of the column so that a uniform volume per unit time of the vaporizable material is vaporized to form the layer on the substrate, irrespective of the feeding rate." The patent application was filed on July 27, 2005 (11/190,653). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,021&OS=7,989,021&RS=7,989,021 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Avon Products Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Avon Products, New York, has been assigned a patent (7,989,002) developed by five co-inventors for a "high gloss gel-based lipstick." The co-inventors are Arvind N. Shah, Suffern, N.Y., Steven E. Brown, New Windsor, N.Y., Leona Giat Fleissman, Ridgewood, N.J., Joanne Shkreli, Carmel, N.Y., and Shelly Ann Sharmeelee Ramrattan, Bronx, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Gel-based lipstick compositions are disclosed comprising an ester terminated poly(ester-amide) (ETPEA) polymeric gellant, a first wax component having a melting point above the sol-gel transition temperature of the ETPEA gellant, a second wax compositions having a melting point equal to of below the sol-gel transition temperature of the ETPEA gellant, optionally a silicone T-resin co-gellant, and one or more oils capable of forming a gel with the ETPEA gellant. The gel compositions are solid or semi-solid at room temperature and are capable of being molded into self-supporting sticks. The disclosed gels provide high gloss films when applied to the lips and/or provide a rheology characterized by a high viscosity over repeated shear cycles." The patent application was filed on Dec. 20, 2006 (11/642,348). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,002&OS=7,989,002&RS=7,989,002 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Xerox Assigned Patent for Hydroxyquinoline Containing Photoconductors ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,989,129) developed by six co-inventors for hydroxyquinoline containing photoconductors. The co-inventors are Jin Wu, Webster, N.Y., Dennis J. Prosser, Walworth, N.Y., J. Robinson Cowdery-Corvan, Webster, N.Y., Raymond K. Crandall, Rochester, N.Y., David M. Skinner, Rochester, N.Y., and Jean D. Van Epps Jr., Palmyra, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer that contains at least one charge transport component, and where the photogenerating layer contains a hydroxyquinoline." The patent application was filed on March 31, 2008 (12/059,555). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,129&OS=7,989,129&RS=7,989,129 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Xerox Assigned Patent for Carbazole Containing Charge Transport Layer Photoconductors ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,989,127) developed by eight co-inventors for "carbazole containing charge transport layer photoconductors." The co-inventors are Jin Wu, Webster, N.Y., Terry L. Street, Fairport, N.Y., Terry L. Bluhm, Pittsford, N.Y., Kent J. Evans, Lima, N.Y., Edward F. Grabowski, Webster, N.Y., Susan M. Vandusen, Williamson, N.Y., Min-Hong Fu, Webster, N.Y., and Kathleen M. Carmichael, Williamson, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A photoconductor that includes, for example, a supporting substrate, a photogenerating layer, and at least one charge transport layer comprised of at least one charge transport component, and wherein the charge transport layer contains a carbazole." The patent application was filed on April 30, 2008 (12/112,322). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,127&OS=7,989,127&RS=7,989,127 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Embedded DRAM Integrated Circuits with Extremely Thin Silicon-on-insulator Pass Transistors ALEXANDRIA, Va., Aug. 8 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,985,633) developed by six co-inventors for "embedded DRAM integrated circuits with extremely thin silicon-on-insulator pass transistors." The co-inventors are Jin Cai, Cortlandt Manor, N.Y., Josephine Chang, Mahopac, N.Y., Leland Chang, New York, Brian L. Ji, Fishkill, N.Y., Steven John Koester, Ossining, N.Y., and Amlan Majumdar, White Plains, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Integrated circuits having combined memory and logic functions are provided. In one aspect, an integrated circuit is provided. The integrated circuit comprises: a substrate comprising a silicon layer over a BOX layer, wherein a select region of the silicon layer has a thickness of between about three nanometers and about 20 nanometers; at least one eDRAM cell comprising: at least one pass transistor having a pass transistor source region, a pass transistor drain region and a pass transistor channel region formed in the select region of the silicon layer; and a capacitor electrically connected to the pass transistor." The patent application was filed on Oct. 30, 2007 (11/929,943). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,633&OS=7,985,633&RS=7,985,633 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** NASA Assigned Patent ALEXANDRIA, Va., Aug. 8 -- NASA has been assigned a patent (7,985,709) developed by nine co-inventors for a "methodology for the effective stabilization of tin-oxide-based oxidation/reduction catalysts." The co-inventors are Jeffrey D. Jordan, Williamsburg, Va., David R. Schryer, Hampton, Va., Patricia P. Davis, Yorktown, Va., Bradley D. Leighty, Gloucester, Va., Anthony N. Watkins, Hampton, Va., Jacqueline L. Schryer, Hampton, Va., Donald M. Oglesby, Virginia Beach, Va., Suresh T. Gulati, Elmira, N.Y., and Jerry C. Summers, Charleston, W.va. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention described herein involves a novel approach to the production of oxidation/reduction catalytic systems. The present invention serves to stabilize the tin oxide reducible metal-oxide coating by co-incorporating at least another metal-oxide species, such as zirconium. In one embodiment, a third metal-oxide species is incorporated, selected from the group consisting of cerium, lanthanum, hafnium, and ruthenium. The incorporation of the additional metal oxide components serves to stabilize the active tin-oxide layer in the catalytic process during high-temperature operation in a reducing environment (e.g., automobile exhaust). Moreover, the additional metal oxides are active components due to their oxygen-retention capabilities. Together, these features provide a mechanism to extend the range of operation of the tin-oxide-based catalyst system for automotive applications, while maintaining the existing advantages." The patent application was filed on Sept. 28, 2004 (10/956,515). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,709&OS=7,985,709&RS=7,985,709 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Regeneron Pharmaceuticals Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Regeneron Pharmaceuticals, Tarrytown, N.Y., has been assigned a patent (7,988,967) developed by five co-inventors for "high affinity human antibodies to human nerve growth factor." The co-inventors are Lynn MacDonald, White Plains, N.Y., Richard Torres, New York, Marc R. Morra, Beacon Falls, Conn., Joel H. Martin, Putnam Valley, N.Y., and Joel C. Reinhardt, Mount Kisco, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A human antibody or antigen-binding fragment of an antibody which specifically binds human nerve growth factor (NGF) with K.sub.D of 5 pM or less, as measured by surface plasmon resonance, wherein the antibody or fragment thereof binds human NGF with an affinity of about 2-10-fold higher than the antibody or fragment binds rat and mouse NGF. The antibodies are useful in treating pain, including inflammatory pain, post-operative incision pain, neuropathic pain, fracture pain, osteoporotic fracture pain, post-herpetic neuralgia, osteoarthritis, rheumatoid arthritis, cancer pain, pain resulting from burns, gout joint pain, as well as diseases, such as hepatocellular carcinoma, breast cancer, and liver cirrhosis." The patent application was filed on Aug. 8, 2008 (12/188,330). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,988,967&OS=7,988,967&RS=7,988,967 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Xerox Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,985,464) developed by Jin Wu, Webster, N.Y., for "core shell intermediate transfer components." The abstract of the patent published by the U.S. Patent and Trademark Office states: "An intermediate transfer belt that includes a conductive core shell component thereover, wherein the core is, for example, comprised of a silica, and the shell is comprised of, for example, an antimony tin oxide." The patent application was filed on July 29, 2008 (12/181,354). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,464.PN.&OS=PN/7,985,464&RS=PN/7,985,464 Written by Anjali Jha; edited by Jaya Anand. *** International Business Machines Assigned Patent for Method of Forming a Nonvolatile Memory Device Using Semiconductor Nanoparticles ALEXANDRIA, Va., Aug. 8 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,985,686) developed by Charles T. Black, New York, and Kathryn Wilder Guarini, Yorktown Heights, N.Y., for a "method of forming a nonvolatile memory device using semiconductor nanoparticles." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A floating gate for a field effect transistor (and method for forming the same and method of forming a uniform nanoparticle array), includes a plurality of discrete nanoparticles in which at least one of a size, spacing, and density of the nanoparticles is one of templated and defined by a self-assembled material." The patent application was filed on March 13, 2006 (11/373,127). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,686&OS=7,985,686&RS=7,985,686 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Eastman Kodak Assigned Patent for Actuating Transistor Including Reduced Channel Length ALEXANDRIA, Va., Aug. 8 -- Eastman Kodak, Rochester, N.Y, has been assigned a patent (7,985,684) developed by Lee W. Tutt, Webster, N.Y., Shelby F. Nelson, Pittsford, N.Y., for an "actuating transistor including reduced channel length." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of actuating a semiconductor device includes providing a transistor. The transistor includes a substrate. A first electrically conductive material layer, having a thickness, is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer overhangs the first electrically conductive material layer. An electrically insulating material layer, having a thickness, is conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate. The thickness of the first electrically conductive material layer is greater than the thickness of the electrically insulating material layer. A semiconductor material layer conforms to and is in contact with the electrically insulating material layer. A third electrically conductive material layer is nonconformally positioned over and in contact with a first portion of the semiconductor material layer. A fourth electrically conductive material layer is nonconformally positioned over and in contact with a second portion of the semiconductor material layer. A voltage is applied between the third electrically conductive material layer and the fourth electrically conductive material layer. A voltage is applied to the first electrically conductive material layer to electrically connect the third electrically conductive material layer and the fourth electrically conductive material layer." The patent application was filed on Jan. 7, 2011 (12/986,199). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,684&OS=7,985,684&RS=7,985,684 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Tokyo Electron Assigned Patent for Method of Forming Aluminum-doped Metal Carbonitride Gate Electrodes ALEXANDRIA, Va., Aug. 8 -- Tokyo Electron, Tokyo, has been assigned a patent (7,985,680) developed by Toshio Hasegawa, Delmar, N.Y., and Gerrit J Leusink, Saltpoint, N.Y., for a "method of forming aluminum-doped metal carbonitride gate electrodes." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness." The patent application was filed on Aug. 25, 2008 (12/197,756). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,680&OS=7,985,680&RS=7,985,680 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Bausch & Lomb Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Bausch & Lomb, Rochester, N.Y., has been assigned a patent (7,988,988) developed by four co-inventors for "contact lenses with mucin affinity." The co-inventors are Paul L. Valint Jr., Pittsford, N.Y., Joseph A. McGee, Dewitt, N.Y., David P. Vanderbilt, Webster, N.Y., and Joseph C. Salamone, Boca Raton, Fla. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A biomedical device, such as a contact lens, has a surface linked to a polymer comprising boronic acid moieties. The boronic acid monomeric units may be derived from an ethylenically unsaturated monomer containing a boronic acid moiety, such as a vinylphenyl boronic acid or a (meth)acrylamido phenyl boronic acid. The boronic acid moieties may be complexed with mucin, especially epithelial mucin." The patent application was filed on Nov. 21, 2005 (11/283,632). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,988,988&OS=7,988,988&RS=7,988,988 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Semiconductor Transistors with Contact Holes Close to Gates ALEXANDRIA, Va., Aug. 8 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,985,643) developed by six co-inventors for "semiconductor transistors with contact holes close to gates." The co-inventors are Toshiharu Furukawa, Essex Junction, Vt., Mark Charles Hakey, Fairfax, Vt., Steven J. Holmes, Guilderland, N.Y., David Vaclav Horak, Essex Junction, Vt., Charles William Koburger III, Delmar, N.Y., and William Robert Tonti, Essex Junction, Vt. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor structure. The structure includes (a) a semiconductor layer including a channel region disposed between first and second S/D regions; (b) a gate dielectric region on the channel region; (c) a gate region on the gate dielectric region and electrically insulated from the channel region by the gate dielectric region; (d) a protection umbrella region on the gate region, wherein the protection umbrella region comprises a first dielectric material, and wherein the gate region is completely in a shadow of the protection umbrella region; and (e) a filled contact hole (i) directly above and electrically connected to the second S/D region and (ii) aligned with an edge of the protection umbrella region, wherein the contact hole is physically isolated from the gate region by an inter-level dielectric (ILD) layer which comprises a second dielectric material different from the first dielectric material." The patent application was filed on March 21, 2008 (12/052,855). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,643&OS=7,985,643&RS=7,985,643 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Infineon Technologies Assigned Patent for Formation of Active Area Using Semiconductor Growth Process Without STI Integration ALEXANDRIA, Va., Aug. 8 -- Infineon Technologies, Munich, Germany, has been assigned a patent (7,985,642) developed by Jiang Yan, Fishkill, N.Y., and Danny Pak-Chum Shum, Poughkeepsie, N.Y., for a "formation of active area using semiconductor growth process without STI integration." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor device can be formed without use of an STI process. An insulating layer is formed over a semiconductor body. Portions of the insulating layer are removed to expose the semiconductor body, e.g., to expose bare silicon. A semiconductor material, e.g., silicon, is grown over the exposed semiconductor body. A device, such as a transistor, can then be formed in the grown semiconductor material." The patent application was filed on Oct. 14, 2009 (12/579,234). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,642&OS=7,985,642&RS=7,985,642 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Research Development Foundation Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Research Development Foundation, Carson City, Nev., has been assigned a patent (7,985,435) developed by six co-inventors for a "triterpene compositions and methods for use thereof." The co-inventors are Charles J. Arntzen, Ithaca, N.Y., Mary E. Blake, Tucson, Ariz., Jordan U. Gutterman, Houston, Joseph J. Hoffmann, Tucson, Ariz., Gamini S. Jayatilake, Broomfield, Colo., and David T. Bailey, Boulder, Colo. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The invention provides saponin mixtures and compounds which are isolated from the species Acacia victoriae and methods for their use. These compounds may contain a triterpene moiety, such as acacic or oleanolic acid, to which oligosaccharides and monoterpenoid moieties are attached. The mixtures and compounds have properties related to the regulation of apoptosis and cytotoxicity of cells and exhibit potent anti-tumor effects against a variety of tumor cells." The patent application was filed on Jan. 15, 2010 (12/688,651). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,435.PN.&OS=PN/7,985,435&RS=PN/7,985,435 Written by Anjali Jha; edited by Jaya Anand. *** International Business Machines Assigned Patent for Planarization Stop Layer in Phase Change Memory Integration ALEXANDRIA, Va., Aug. 8 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,985,654) developed by Matthew J. Breitwisch, Yorktown Heights, N.Y., and Yu Zhu, Yorktown Heights, N.Y., for a "planarization stop layer in phase change memory integration." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A key hole structure and method for forming a key hole structure to form a pore in a memory cell. The method includes forming a first dielectric layer on a semiconductor substrate having an electrode formed therein, forming an isolation layer on the first dielectric layer, forming a second dielectric layer on the isolation layer, and forming a planarization stop layer on the second dielectric layer. The method further includes forming a via to extend to the first dielectric layer and recessing the isolation layer and the stop layer with respect to the second dielectric layer, depositing a conformal film within via and over the stop layer, forming a key hole within the conformal film at a center region of the via such that a tip of the key hole is disposed at an upper surface of the second dielectric layer, and planarizing the conformal film to the stop layer." The patent application was filed on Sept. 14, 2009 (12/559,115). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,654&OS=7,985,654&RS=7,985,654 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** GLOBALFOUNDRIES Assigned Patent ALEXANDRIA, Va., Aug. 8 -- GLOBALFOUNDRIES, Grand Cayman, Ky., has been assigned a patent (7,985,639) developed by Frank Scott Johnson, Wappingers Falls, N.Y., and Douglas Bonser, Hopewell Junction, N.Y., for a "method for fabricating a semiconductor device having a semiconductive resistor structure." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods are provided for fabricating a semiconductor device. A method forms a conductive fin arrangement on a first region of a semiconductor substrate. The method continues by forming a semiconductive resistor structure on a second region of the semiconductor substrate after forming the conductive fin arrangement, and forming a gate stack foundation structure overlying the conductive fin arrangement after forming the semiconductive resistor structure. The method removes portions of the gate stack foundation structure overlying the first region of the semiconductor substrate to define a gate structure for the semiconductor device." The patent application was filed on Sept. 18, 2009 (12/562,873). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,639&OS=7,985,639&RS=7,985,639 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** New York, Florida Inventors Develop Patent for Method of Separating Tumor Cells With and Without Lymphotropic Metastatic Potential in a Human Carcinoma ALEXANDRIA, Va., Aug. 8 -- Untae Kim, Snyder, N.Y., and Stefan A. Cohen, Tierra Verde, Fla., has developed a patent (7,989,001) for a "method of separating tumor cells with and without lymphotropic metastatic potential in a human carcinoma." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for separating tumor cells with lymphotropic metastatic potential from those without lymphotropic metastatic potential in a human carcinoma. Cells of the carcinoma are transplanted in each of a plurality of fresh athymic mice. At least one of the athymic mice which does not develop a palpable tumor at the transplant site is treated to suppress the T-cell independent innate anti-tumor activity of natural killer cells therein. Tumor-forming cells at the transplant site of the treated athymic animal are harvested to obtain a cell line of cells with lymphotropic metastatic potential, which is also tested for the expression of T-lymphocyte associated molecules. Such cells are intimately associated with low or diminished angiogenicity and immunogenicity. The traditional scientific criteria for human cancer cells is re-defined, and therapeutic targets for human cancer cells is re-focused." The patent application was filed on Sept. 13, 2004 (10/939,974). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,989,001&OS=7,989,001&RS=7,989,001 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Infineon Technologies Assigned Patent for Method of Making a Contact in a Semiconductor Device ALEXANDRIA, Va., Aug. 8 -- Infineon Technologies, Munich, Germany, has been assigned a patent (7,985,676) developed by Veit Klee, Pleasant Valley, N.Y., Roman Knoefler, Fishkill, N.Y., and Uwe Paul Schroeder, Lake Carmel, N.Y., for a "method of making a contact in a semiconductor device." The abstract of the patent published by the U.S. Patent and Trademark Office states: "To form a semiconductor device, an insulating layer is formed over a conductive region and a pattern transfer layer is formed over the insulating layer. The pattern transfer layer is patterned in the reverse tone of a layout of recesses to be formed in the insulating layer such that the pattern transfer layer remains over regions where the recesses are to be formed. A mask material is formed over the insulating layer and is aligned with the pattern transfer layer. Remaining portions of the pattern transfer layer are removed and recesses are etched in the insulating layer using the mask material as a mask." The patent application was filed on Jan. 25, 2010 (12/693,231). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,676&OS=7,985,676&RS=7,985,676 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** IGT Assigned Patent for Method and System for Monitoring Gaming Device Play and Determining Compliance Status ALEXANDRIA, Va., Aug. 8 -- IGT, Reno, Nev., has been assigned a patent (7,988,551) developed by seven co-inventors for a "method and system for monitoring gaming device play and determining compliance status." The co-inventors are Jay S. Walker, Ridgefield, Conn., James A. Jorasch, New York, Geoffrey M. Gelman, Boston, Stephen C. Tulley, Monroe, Conn., Daniel E. Tedesco, Shelton, Conn., Robert C. Tedesco, Fairfield, Conn., and Dean P. Alderucci, Westport, Conn. The abstract of the patent published by the U.S. Patent and Trademark Office states: "After a player purchases a contract providing insurance against gambling losses, a server or other device in communication with a gaming device (e.g., a "player tracking" server, "slot accounting" server and/or other computer device) may operate to (i) receive game play data in association with one or more plays of the gaming device, (ii) determine a compliance status based on the received game play data and one or more play requirements associated with the contract, and (iii) provide a refund amount due to the player based on the compliance status. Before providing any refund, the server or other device may store a status indicator relating to the one or more plays indicating whether the play was compliant with the contract. Furthermore, an alert may be provided to the player if a particular play is not compliant with the contract." The patent application was filed on May 15, 2006 (11/434,309). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,988,551.PN.&OS=PN/7,988,551&RS=PN/7,988,551 Written by Anjali Jha; edited by Jaya Anand. *** Andritz Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Andritz, Glens Falls, N.Y., has been assigned a patent (7,988,822) developed by C. Bertil Stromberg, Diamond Point, N.Y., for a "treatment vessel for straw or other light bulky material." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method to chemically treat light weight, bulky cellulosic material including: introducing the material to an upper inlet of a substantially vertical treatment vessel; maintaining the material in the vessel at a pressure of at least 20 bar and at a temperature of at least 200.degree. C.; treating the material with a cooking liquor in the vessel; moving the material past at least one anti-compression ring on an inside surface of the vessel, as the material moves downward through the vessel; agitating the material in the vessel, and discharging the treated material from a lower discharge port of the vessel." The patent application was filed on Sept. 8, 2008 (12/206,365). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988822.PN.&OS=PN/7988822&RS=PN/7988822 Written by Kusum Sangma; edited by Anand Kumar. *** University of California Assigned Patent ALEXANDRIA, Va., Aug. 8 -- The University of California, Oakland, Calif., has been assigned a patent (7,985,615) developed by Fei Liu, Beacon, N.Y., Ma Siguang, Los Angeles, and Kang L.Wang, Santa Monica, Calif., for a "method of forming a carbon nanotube/nanowire thermo-photovoltaic cell." The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention relates to embodiments of TPV cell structures based on carbon nanotube and nanowire materials. One embodiment according to the present invention is a p-n junction carbon nanotube/nanowire TPV cell, which is formed by p-n junction wires. A second embodiment according to the present invention is a carbon nanotube/nanowire used as a p-type (or n-type), and using bulk material as the other complementary type to a form p-n junction TPV cell. A third embodiment according to the present invention uses a controllable Schottky barrier height between a one-dimensional nanowire and a metal contact to form the built-in potential of the TPV cells." The patent application was filed on Nov. 20, 2006 (11/561,733). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7985615.PN.&OS=PN/7985615&RS=PN/7985615 Written by Kusum Sangma; edited by Anand Kumar. *** New York Inventor Develops Patent for Waste Processing Process Using Acid ALEXANDRIA, Va., Aug. 8 -- Warren Vanderpool, Auburn, N.Y., has developed a patent (7,988,830) for a "waste processing process using acid." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Waste processing system, for performing a waste processing process, the system including a shredder, a grinder and a steam explosion device such as a cooking extruder. The waste processing system is used to process raw waste, such as consumer waste, into an end product such as pellets. The waste processing includes an acid treatment step to sanitize, purify and/or increase a cellulose content of the waste. The acid is preferably a weak acid and/or an organic acid." The patent application was filed on Aug. 11, 2008 (12/189,719). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7988830.PN.&OS=PN/7988830&RS=PN/7988830 Written by Kusum Sangma; edited by Anand Kumar. *** Corning Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Corning, Corning, N.Y., has been assigned a patent (7,988,804) developed by William Peter Addiego, Big Flats, N.Y., and Christopher Raymond Glose, Painted Post, N.Y., for a "material and method for bonding zircon blocks." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A process for making large zircon blocks by bonding multiple zircon components, and bonding materials for use in such process. The invention enables the manufacture of large zircon blocks without the need of larger-size isopressing equipment. The invention is particularly useful in making large-size isopipes for use in a fusion down-draw process in making glass sheets for use in, e.g., LCD production." The patent application was filed on Feb. 23, 2009 (12/390,799). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,988,804.PN.&OS=PN/7,988,804&RS=PN/7,988,804 Written by Arpi Sharma; edited by Jaya Anand. *** Praxair Technology Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Praxair Technology, Danbury, Conn., has been assigned a patent (7,985,399) developed by Raymond F. Drnevich, Clarence Center, N.Y., and Ramchandra M. Watwe, Troy, Mich., for a "hydrogen production method and facility." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A hydrogen production method and facility in which a synthesis gas stream produced by the gasification of a carbonaceous substance is processed within a synthesis gas processing unit in which the carbon monoxide content is reacted with steam to produce additional hydrogen that is removed by a pressure swing adsorption unit. The tail gas from the pressure swing adsorption unit is further reformed with the addition of a hydrocarbon containing stream in a steam methane reforming system, further shifted to produce further additional hydrogen. The further hydrogen is then separated in another pressure swing adsorption unit." The patent application was filed on March 27, 2008 (12/056,718). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,985,399.PN.&OS=PN/7,985,399&RS=PN/7,985,399 Written by Anjali Jha; edited by Jaya Anand. *** Xerox Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Xerox, Norwalk, Conn., has been assigned a patent (7,986,419) developed by Chris Mazur, Rochester, N.Y., for a "performance optimization method for network printers." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method for optimizing the performance of a network printer comprising: scanning the input print data stream in a raster image processor and processing the entire input print data stream in a page parallel processing pathway where said input print data stream is in a page independent form; otherwise selecting the processing pathway corresponding to a lower processing time period and thereafter processing the entire input print data stream using said selected processing pathway." The patent application was filed on Sept. 12, 2007 (11/900,526). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,986,419.PN.&OS=PN/7,986,419&RS=PN/7,986,419 Written by Arpi Sharma; edited by Jaya Anand. *** Corning Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Corning, Corning, N.Y., has been assigned a patent (7,986,414) developed by Christopher Alan Lee, Pittsford, N.Y., and Mark Joseph Tronolone, Webster, N.Y., for a "measurement of multiple surface test objects with frequency scanning interferometer." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A frequency scanning interferometer is arranged for simultaneously measuring multiple surfaces of a test object through a wide range of expected offsets. Knowledge of the expected locations of the test surfaces is compared with a sequence of ambiguity intervals based on a synthetic measurement wavelength to center the test surfaces within the ambiguity intervals." The patent application was filed on Jan. 30, 2009 (12/363,067). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,986,414.PN.&OS=PN/7,986,414&RS=PN/7,986,414 Written by Arpi Sharma; edited by Jaya Anand. *** Micron Technology Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Micron Technology, Boise, Idaho, has been assigned a patent (7,985,995) developed by Kie Y. Ahn, Chappaqua, N.Y., and Leonard Forbes, Corvallis, Ore., for a Zr-substituted BaTiO.sub.3 films. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The use of atomic layer deposition (ALD) to form a zirconium substituted layer of barium titanium oxide (BaTiO.sub.3), produces a reliable ferroelectric structure for use in a variety of electronic devices such as a dielectric in nonvolatile random access memories (NVRAM), tunable dielectrics for multi layer ceramic capacitors (MLCC), infrared sensors and electro-optic modulators. The structure is formed by depositing alternating layers of barium titanate and barium zirconate by ALD on a substrate surface using precursor chemicals, and repeating to form a sequentially deposited interleaved structure of desired thickness and composition. Such a layer may be used as the gate insulator of a MOSFET, or as a capacitor dielectric. The properties of the dielectric may be tuned by adjusting the percentage of zirconium to titanium to optimize properties such as a dielectric constant, Curie point, film polarization, ferroelectric property and a desired relaxor response." The patent application was filed on Aug. 3, 2006 (11/498,559). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7985995.PN.&OS=PN/7985995&RS=PN/7985995 Written by Arpi Sharma; edited by Jaya Anand. *** Bausch & Lomb Assigned Patent ALEXANDRIA, Va., Aug. 8 -- Bausch & Lomb, Rochester, N.Y., has been assigned a patent (7,988,701) developed by six co-inventors for a preloaded IOL injector. The co-inventors are Edward Vaquero, Fairport, N.Y., Brian D. Rathert, St. Petersburg, Fla., Thomas M. Heyman, Placentia, Calif., Aaron M. Torp, Rochester, N.Y., Martin P. Schooping, Hamlin, N.Y., and Philip L. Bryan, Honeoye Falls, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A preloaded intraocular lens injection device includes a retainer for releasably holding an IOL in an unstressed state. The retainer and IOL are removably attached to an injector body and are sealed in the same package for delivery to a surgeon. In an alternate embodiment, the retainer and IOL are coupled together and sealed in one package and the injector body is sealed in a separate package with the surgeon attaching the retainer to the injector body at the time of surgery. To deliver the IOL through the injector body, the retainer is removed from the injector body causing the IOL to release from the retainer and become located in an unstressed state in the injector body. A compressor is moved to the closed position to compress the IOL, the injector tip is inserted through a small incision in an eye and a plunger is advanced to push the IOL through and out the injector body tip and into an eye." The patent application was filed on May 19, 2005 (11/132,526). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,988,701&OS=7 For more information about Targeted News Service products and services, please contact: Myron Struck, editor, Targeted News Service LLC, Springfield, Va., 703/304-1897; [email protected]; http://targetednews.com. -1056980 (c) 2011 Targeted News Service |