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U.S. Patents Awarded to Inventors in New York (July 3)(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., July 3 -- The following federal patents were awarded to inventors in New York. *** General Electric Assigned Patent ALEXANDRIA, Va., July 3 -- General Electric, Niskayuna, N.Y., has been assigned a patent (7,969,049) developed by five co-inventors for a "high power density cooling of electrical machines using ceramic tubes of high thermal conductivity." The co-inventors are Evangelos Trifon Laskaris, Schenectady, N.Y., Kirubaharan Sivasubramaniam, Clifton Park, N.Y., James Pelligrino Alexander, Ballston Lake, N.Y., William Dwight Gerstler, Niskayuna, N.Y., and James William Bray, Niskayuna, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "A high power density generator contains an armature structure having a plurality of conductors and at least one heat transfer tube thermally coupled to the conductors. The tube is hollow so as to allow a heat transfer fluid to pass through it. The tube is made of a material having a thermal conductivity .lamda. of at least 20 W/mK, an electrical breakdown strength of at least 60 V/mil, and a mechanical strength adequate for handling, manufacturing and operation. In an embodiment of the invention, the tube is made of a ceramic material." The patent application was filed on Dec. 14, 2006 (11/610,905). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7969049.PN.&OS=PN/7969049&RS=PN/7969049 Written by Kusum Sangma; edited by Anand Kumar. *** Rohm and Haas Electronic Materials Assigned Patent ALEXANDRIA, Va., July 3 -- Rohm and Haas Electronic Materials, Marlborough, Mass., has been assigned a patent (7,968,444) developed by Yu Luo, Acton, Mass., Neil D. Brown, Merrick, N.Y., and Michael P. Toben, Smithtown, N.Y., for "lead-free tin alloy electroplating compositions and methods." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Disclosed are electrolyte compositions for depositing a tin alloy on a substrate. The electrolyte compositions include tin ions, ions of one or more alloying metals, a flavone compound and a dihydroxy bis-sulfide. The electrolyte compositions are free of lead and cyanide. Also disclosed are methods of depositing a tin alloy on a substrate and methods of forming an interconnect bump on a semiconductor device." The patent application was filed on Dec. 31, 2009 (12/655,554). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,444&OS=7,968,444&RS=7,968,444 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Ion Implantation Combined with in Situ or Ex Situ Heat Treatment for Improved Field Effect Transistors ALEXANDRIA, Va., July 3 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,968,459) developed by seven co-inventors for an "ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors." The co-inventors are Stephen W. Bedell, Wappingers Falls, N.Y., Joel P. DeSouza, Putnam Valley, N.Y., Zhibin Ren, Hopewell Function, N.Y., Alexander Reznicek, Mount Kisco, N.Y., Devandra K. Sadana, Pleasantville, N.Y., Katherine L. Saenger, Ossining, N.Y., and Ghavam Shahidi, Yorktown Heights, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "This invention teaches methods of combining ion implantation steps with in situ or ex situ heat treatments to avoid and/or minimize implant-induced amorphization (a potential problem for source/drain (S/D) regions in FETs in ultrathin silicon on insulator layers) and implant-induced plastic relaxation of strained S/D regions (a potential problem for strained channel FETs in which the channel strain is provided by embedded S/D regions lattice mismatched with an underlying substrate layer). In a first embodiment, ion implantation is combined with in situ heat treatment by performing the ion implantation at elevated temperature. In a second embodiment, ion implantation is combined with ex situ heat treatments in a "divided-dose-anneal-in-between" (DDAB) scheme that avoids the need for tooling capable of performing hot implants." The patent application was filed on May 28, 2008 (12/128,040). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,459&OS=7,968,459&RS=7,968,459 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Methods for Incorporating High Dielectric Materials for Enhanced SRAM Operation and Structures Produced Thereby ALEXANDRIA, Va., July 3 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,968,450) developed by four co-inventors for "methods for incorporating high dielectric materials for enhanced SRAM operation and structures produced thereby." The co-inventors are Azeez J. Bhavnagarwala, Newtown, Conn., Stephen V. Kosonocky, Wilton, Conn., Satyanarayana V. Nitta, Poughquag, N.Y., and Sampath Purushothaman, Yorktown Heights, N.Y. The abstract of the patent published by the U.S. Patent and Trademark Office states: "Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught." The patent application was filed on Aug. 19, 2009 (12/543,999). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,450&OS=7,968,450&RS=7,968,450 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** International Business Machines Assigned Patent for Method of Forming an Embedded Barrier Layer for Protection from Chemical Mechanical Polishing Process ALEXANDRIA, Va., July 3 -- International Business Machines, Armonk, N.Y., has been assigned a patent (7,968,456) developed by Paul S. McLaughlin, Poughkeepsie, N.Y., Sujatha Sankaran, Wappingers Falls, N.Y., and Theodorus E. Standaert, Pine Bush, N.Y., for a "method of forming an embedded barrier layer for protection from chemical mechanical polishing process." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A semiconductor interconnect structure and method providing an embedded barrier layer to prevent damage to the dielectric material during or after Chemical Mechanical Polishing. The method employs a combination of an embedded film, etchback, using either selective CoWP or a conformal cap such as a SiCNH film, to protect the dielectric material from the CMP process as well as subsequent etch, clean and deposition steps of the next interconnect level." The patent application was filed on May 20, 2008 (12/123,799). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,456&OS=7,968,456&RS=7,968,456 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Rockefeller University Assigned Patent ALEXANDRIA, Va., July 3 -- Rockefeller University, New York, has been assigned a patent (7,968,299) developed by six co-inventors for "methods and kits for distinguishing between specific and non-specific protein associations." The co-inventors are Brian T. Chait, New York, Alan J. Tackett, New York, Jeffrey A. DeGrasse, New York, Marlene Oeffinger, New York, Michael P. Rout, New York, and Matthew D. Sekedat, New York. The abstract of the patent published by the U.S. Patent and Trademark Office states: "The present invention is method of determining whether or not associations between a given protein and other proteins in a cell are specific. The method comprises (a) providing a first sample of the cells in which the given protein contains a tag, (b) providing a second sample of the same cells, wherein the given protein and the other proteins are metabolically labeled, and wherein neither the given protein nor the other proteins are tagged, (c) mixing and lysing the first cell sample and the second cell sample to provide a mixture of proteins, (d) binding the tag of the given protein to a substrate, (e) isolating proteins associated with the tagged given protein bound to the substrate, whereby the associated proteins comprise: (i) proteins specifically associated with the tagged given protein, (ii) proteins non-specifically associated with the tagged given protein, or (iii) a combination thereof, (f) determining whether each associated protein is unlabeled or a mixture of labeled and unlabeled proteins, wherein if the associated protein is not labeled, then that protein was specifically associated in the cell with the tagged given protein." The patent application was filed on Aug. 21, 2006 (11/508,736). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,299&OS=7,968,299&RS=7,968,299 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** Carestream Health Assigned Patent ALEXANDRIA, Va., July 3 -- Carestream Health, Rochester, N.Y., has been assigned a patent (7,968,358) developed by Timothy J. Tredwell, Fairport, N.Y., Jackson Lai, Rochester, N.Y., for a "digital radiographic flat-panel imaging array with dual height semiconductor and method of making same." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer." The patent application was filed on July 29, 2009 (12/511,119). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,358&OS=7,968,358&RS=7,968,358 Written by Satyaban Rath; edited by Hemanta Panigrahi. *** New York Inventors Develop Patent for CACNB2 Nucleic Acid Mutations as Indicators of Shorter Than Normal Qt Interval and St Segment Elevation Associated with Sudden Cardiac Death ALEXANDRIA, Va., July 3 -- Charles Antzelevitch, New Hartford, N.Y., and Guido Pollevick, Dobbs Ferry, N.Y., have developed a patent (7,968,296) for a "CACNB2 nucleic acid mutations as indicators of shorter than normal QT interval and ST segment elevation associated with sudden cardiac death." The abstract of the patent published by the U.S. Patent and Trademark Office states: "Previously unknown mutations of the CACNA1C and CACNB2b genes are disclosed which are involved in ion channel disruptions associated with shorter than normal QT interval and ST segment elevation syndrome. These mutations are utilized to diagnose and screen for shorter than normal QT interval and ST segment elevation syndrome, thus providing modalities for diagnosing syncope and/or sudden cardiac death and/or predicting susceptibility to syncope and/or sudden cardiac death. Nucleic acid probes are provided which selectively hybridize to the mutant nucleic acids described herein. Antibodies are provided which selectively bind to the mutant polypeptides described herein. The mutations described herein are also utilized to screen for compounds useful in treating the symptoms manifest by such mutations." The patent application was filed on Oct. 8, 2010 (12/901,070). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=7,968,296&OS=7,968,296&RS=7,968,296 Written by Satyaban Rath; edited by Hemanta Panigrahi. For more information about Targeted News Service products and services, please contact: Myron Struck, editor, Targeted News Service LLC, Springfield, Va., 703/304-1897; [email protected]; http://targetednews.com. -1053145 (c) 2011 Targeted News Service |