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Low-Loss Silicon Carbide (SiC) Power Devices
(Power Electronics Technology Via Acquire Media NewsEdge) Renesas Electronics Corporation announced the availability of
three silicon carbide (SiC) compound power devices, the RJQ6020DPM,
the RJQ6021DPM and the RJQ6022DPM, that incorporate multiple SiC
diodes and multiple power transistors in a single package to
compose a power converter circuit or switching circuit. These are
the second series of power semiconductor products from Renesas to
employ SiC, a new material effective in reducing loss, and they are
intended for use in home appliances such as air conditioners, PC
servers, and power electronics products such as solar power
generation systems.
The new products have a voltage tolerance of 600 V and use an
SiC diode based on low-leakage SiC-SBD technology developed jointly
by Hitachi, Ltd., and Renesas. They combine low loss and
compactness and are available in a fully molded TO-3P package with
a 5-pin configuration and pin assignments optimized for specific
applications, making it easy to configure a circuit unit
incorporating them.
(1) The RJQ6020DPM combines in a single package an SiC-SBD and
two high-voltage power MOSFETs required in switching circuits for
critical-conduction mode PFC in the power supplies of products such
as air conditioners or flat-panel TVs. Reverse recovery time (trr)
of the SiC-SBD is only 15 ns, and the high-voltage power MOSFETs
are highly efficient super-junction (SJ-MOS) transistors employing
a deep-trench configuration to achieve a low on-resistance of 100
mohm.
(2) The RJQ6021DPM combines in a single package an SiC-SBD and
two IGBTs required for PFC in applications such as AC/DC rectifiers
for communication equipment and PC servers. Reverse recovery time
(trr) of the SiC-SBD is only 15 ns, and the ultra-thin-wafer IGBTs
deliver a low on-voltage of 1.5 V that is ideal for
continuous-conduction mode PFC applications. The RJQ6021DPM device
can also be combined with the R2A20114A continuous-conduction mode
PFC-IC from Renesas Electronics, making it easy to implement
interleaved control.
(3) The RJQ6022DPM device combines in a single package two
SiC-SBDs and two IGBTs required for half-bridge circuits in
inverters for applications such as motor drive in air conditioners
and industrial machinery. Reverse recovery time (trr) of the
SiC-SBD is only 15 ns, and the ultra-thin-wafer IGBTs deliver a low
on-voltage of 1.5 V and short circuit time (tsc) of 6 µsec, which
is suitable for motor drive applications.
A single RJQ6022DPM device is sufficient to implement a
half-bridge circuit, while two can be used for a full-bridge
configuration and three for a three-phase bridge configuration. In
addition to simplifying the design of motor drive circuits, the
RJQ6022DPM device will be available as part of kit solutions with
Renesas MCUs such as the RX600 Series.
Samples of Renesas' new SiC compound power devices are scheduled
to begin in February 2012, priced at US$10 per unit. Mass
production is scheduled to start in May 2012 and is expected to
reach a combined volume of 300,000 units per month in April 2013.
(Pricing and availability are subject to change without
notice.)
Renesas
Electronics America Inc. Part Number: RJQ6020DPM
© 2012 Penton Media
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