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International Business Machines Assigned Patent for Ferroelectric Semiconductor Transistor Devices Having Gate Modulated Conductive Layer(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., July 28 -- International Business Machines, Armonk, New York, has been assigned a patent (8,785,995) developed by six co-inventors for the "ferroelectric semiconductor transistor devices having gate modulated conductive layer." The co-inventors are Catherine A. Dubourdieu, New York, David J. Frank, Yorktown Heights, New York, Martin M. Frank, Dobbs Ferry, New York, Vijay Narayanan, New York, Paul M. Solomon, Yorktown Heights, New York, and Thomas N. Theis, Croton-on-Hudson, New York. The patent application was filed on May 16, 2011 (13/108,340). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,785,995.PN.&OS=PN/8,785,995&RS=PN/8,785,995 Written by Deviprasad Jena; edited by Jaya Anand. DJ0728JA0728-1040619 (c) 2014 Targeted News Service [ Back To TMCnet.com's Homepage ] |