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Global Silicon Carbide Market for Semiconductor Applications to Grow at a CAGR of 18% by 2021 - Driven by High Demand from Solar Panel Industry - Research and Markets
[May 15, 2017]

Global Silicon Carbide Market for Semiconductor Applications to Grow at a CAGR of 18% by 2021 - Driven by High Demand from Solar Panel Industry - Research and Markets

DUBLIN, May 15, 2017 /PRNewswire/ --

Research and Markets has announced the addition of the "Global Silicon Carbide Market for Semiconductor Applications 2017-2021" report to their offering.

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The global silicon carbide market for semiconductor applications to grow at a CAGR of 18.12% during the period 2017-2021.

The report, Global Silicon Carbide Market for Semiconductor Applications 2017-2021, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the key vendors operating in this market.

One trend in market is high demand from solar panel industry. Off-grid electronic switching systems (ESSs) use rechargeable batteries to store the excess electricity that is generated from solar panels. It then delivers the stored power after sunset and on cloudy days. ESSs are crucial for power semiconductor suppliers and are gaining popularity in China and Southeast Asia. In villages, solar panels are installed in off-grid locations with an ESS to provide a power source throughout the day.

According to the report, one driver in market is increased need for higher power density. Power density is the major factor to achieve technological advances in power electronics, especially in high-power applications. For instance, electric rail traction drives, inverter systems, wind power generators, and solar power generators use power electronics devices to improve their operational efficiencies. Vendors are investing in R&D processes to develop devices that operate at higher levels of power density. Power electronics devices offer advantages such as less driving power, simplified circuits, and optimum forward and reverse blocking capabilities. This enables them to operate at higher power densities. In addition, compact power electronics device designs are best-suited for high power densities. Thus, the demand for higher power densities in many high-power applications drives the market.

Key vendors

  • Cree
  • GeneSiC Semiconductor
  • Infineon Technologies
  • STMicroelectronics

Other prominent vendors

  • Microsemi
  • Monolith Semiconductor
  • United Silicon Carbide
  • Toshiba

Key Topics Covered:

PART 01: Executive summary

PART 02: Scope of the report

PART 03: Research Methodology

PART 04: Introduction

PART 05: Technology perspective - Wide-band gap materials

PART 06: Market landscape

PART 07: Market segmentation by application

PART 08: Market segmentation by end-user

PART 09: Geographical segmentation

PART 10: Decision framework

PART 11: Drivers and challenges

PART 12: Market trends

PART 13: Vendor landscape

PART 14: Appendix

For more information about this report visit

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