[May 25, 2013] Cypress Semiconductor Assigned Patent for Oxide-nitride Stack Gate Dielectric Tweet (Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., May 25 -- Cypress Semiconductor, San Jose, Calif., has been assigned a patent (8,445,381) developed by Krishnaswamy Ramkumar, San Jose, Calif., and Sundar Narayanan, Sunnyvale, Calif., for an "oxide-nitride stack gate dielectric." The abstract of the patent published by the U.S. Patent and Trademark Office states: "A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms." The patent application was filed on Dec. 20, 2007 (11/961,750). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,445,381&OS=8,445,381&RS=8,445,381 Written by Satyaban Rath; edited by Hemanta Panigrahi. SR0525HP0525-881131 (c) 2013 Targeted News Service [ Back To TMCnet.com's Homepage ]