NXP Semiconductors (News - Alert), a provider of mixed signal and standard product solutions for a number of industry verticals, has just launched a new suite of MOSFETs for Power over Ethernet (PoE) applications.

PoE, which uses Ethernet cables/ports to power devices, is gaining popularity. Earlier, PoE was used for low-power devices like VoIP switches, but new approaches including UPoE and LTPoE++ are enabling higher power devices such as large LCD PoS displays and 3G/4G wireless access points to run at up to 100 W.

In high power applications, however, the power sourcing equipments (PSE) are likely to suffer serious damage in the event of a short circuit or power surge caused by a faulty device.

The new NextPower Live MOSFETs – PSMN040-100MSE and PSMN075-100MSE – are designed to address these demands. The new MOSFETs deliver twice the level of inrush current capability of competitive offerings, which make them ideal for high-power PoE architectures (30W and above) such as PoE+, UPoE and LTPoE++.

“Power over Ethernet is a rapidly evolving technology that requires every component in the PoE ecosystem to keep up if it’s to be more widely adopted,” said Chris Boyce, MOSFET business manager, NXP Semiconductors, in a statement.

“New high-power standards require high-performance protection solutions,” Boyce added. “This new class of devices from NXP delivers twice the capability of existing PoE MOSFETs and we believe will play an important role in the ongoing adoption of high power PoE.”

The new NextPower Live PoE MOSFETs have a safe operating area (SOA) that is twice as capable as existing solutions, providing higher levels of protection and system reliability, the company said. They offer very low RDS (on) and come in the ultra-reliable LFPAK33 package, which is footprint-compatible with similar devices.

NXP Semiconductors has expertise in areas including RF, analog, power management, interface, security and digital processing. The company has operations in more than 25 countries and earned nearly $4.36 billion in 2012.