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Global Focused Ion Beam Market to Reach $1.3 Billion by 2026SAN FRANCISCO, Aug. 17, 2021 /PRNewswire/ -- A new market study published by Global Industry Analysts Inc., (GIA) the premier market research company, today released its report titled "Focused Ion Beam - Global Market Trajectory & Analytics". The report presents fresh perspectives on opportunities and challenges in a significantly transformed post COVID-19 marketplace.
FACTS AT A GLANCE Complimentary Project Preview - This is an ongoing global program. Preview our research program before you make a purchase decision. We are offering a complimentary access to qualified executives driving strategy, business development, sales & marketing, and product management roles at featured companies. Previews provide deep insider access to business trends; competitive brands; domain expert profiles; and market data templates and much more. You may also build your own bespoke report using our MarketGlass™ Platform which offers thousands of data bytes without an obligation to purchase our report. Preview Registry ABSTRACT- Global Focused Ion Beam Market to Reach $1.3 Billion by 2026 Amid the COVID-19 crisis, the global market for Focused Ion Beam estimated at US$826.7 Million in the year 2020, is pojected to reach a revised size of US$1.3 Billion by 2026, growing at a CAGR of 8.2% over the analysis period. Ga+ Liquid Metal, one of the segments analyzed in the report, is projected to grow at a 9.1% CAGR to reach US$916.9 Million by the end of the analysis period. After a thorough analysis of the business implications of the pandemic and its induced economic crisis, growth in the Gas Field segment is readjusted to a revised 6.1% CAGR for the next 7-year period. This segment currently accounts for a 21.7% share of the global Focused Ion Beam market. The U.S. Market is Estimated at $301 Million in 2021, While China is Forecast to Reach $178.8 Million by 2026 Growing focus on semiconductor failure analysis is expected to drive demand for focused ion beam technology. Electronic components can have multiple failure modes, which can be classified in many different ways, such as by cause or time. Failures could occur due to various causes, including impact or stress, mechanical shock, ionizing radiation, excess voltage or current and excess temperature. In semiconductor devices, issues related to device packaging can cause failures owing to short or open circuits, mechanical stress on the device, and contamination. Failures typically occur either in the early stages of the part's lifetime or close to the ending stages. Burn-in procedures are typically utilized for detecting early failures. There are various critical applications that use a wide array of electronic components, including computers, railway signals, telecommunications, life support systems, and aerospace systems. Analyzing the different causes of failures in specific electronic components can prove helpful in creating more reliable product designs. For instance, a resistor's power-handling capability can significantly deteriorate upon its application in high-altitude aircraft. A sudden fail-open fault could cause numerous secondary failures in case it is fast and the circuit has an inductance, which could lead to causing large spikes in voltage exceeding 500 volts. A damaged chip metallization could consequently result in secondary overvoltage damage. In addition, thermal runaway could end up causing catastrophic failures, such as melting, explosions, or fire. In recent years, FIB has been gaining widespread popularity for its application in the field of microcircuit failure analysis. The use of FIB system milling for cross section enables engineers in reviewing and verifying the faults at specific locations. FIB systems can also be utilized for removing the local passivation layer for exposing underlying metal lines for liquid crystal analysis, emission microscopy, or electron or mechanical beam probing. A FIB system is also sometimes needed in local circuit testing for localizing the defect. The FIB system is required for forming probe pads or cutting polysilicon and metallization lines for isolating interconnections. In addition, the FIB system's passive voltage contrast is commonly utilized in integrated circuit failure analysis for locating opens and shorts within the circuitry. FIB is also gaining widespread prominence as a technique for performing failure analysis of very large scale integrations. The benefit offered by FIB in terms of the beam accurately targeting an extremely small surface area, the defect's location can be determined without disrupting the surrounding circuit, thus enabling a more efficient and quick failure analysis as compared to other methods. Plasma Segment to Reach $234.8 Million by 2026 MarketGlass™ Platform Our platform is free for qualified executives and is accessible from our website www.StrategyR.com or via our just released mobile application on iOS or Android About Global Industry Analysts, Inc. & StrategyR™ CONTACTS: LINKS Connect With Us on LinkedIn Follow Us on Twitter
SOURCE Global Industry Analysts, Inc. 
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