Rad Hard Enhancement-Mode Gallium Nitride (eGaN®) Power Transistor Die on Ceramic Adaptors with Space Heritage Provide 'Plug and Play' Functionality to Speed Time-to-Market in Critical High Reliability Designs
EPC Space announced a family of Rad Hard enhancement mode power transistors on ceramic adaptors spanning a range of 40 Volts to 300 Volts, and 4 Amperes to 30 Amperes. These products demonstrate significant performance advantages over competitive silicon-based Rad Hard power MOSFETs. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies and more compact and lighter weight circuitry for critical spaceborne missions.
The die adaptor series provides easy printed circuit board (PCB) mounting for 'plug and play' functionality allowing designers to speed the time-to-market for critical applications using Rad Hard GaN transistors. Applications benefiting from the performance and fast deployment of these products include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning as well as interplanetary propulsion of low-mass robotic vehicles.
"Beyond the superior performance, proven reliability, and ease of design, these devices offer superior radiation hardness under heavy ions (SEE) and gamma radiation (TID)," said Bel Lazar, CEO.
About EPC Space
EPC Space provides revolutionary high-reliability radiation hardened enhancement-mode gallium nitride power management solutions for space and other harsh environments.
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