5G and Beyond: Kyoto Semiconductor's KP-H High-speed Photodiode With Lens-integrated Chip-on-carrier Achieves Bandwidth of 40GHz
Kyoto Semiconductor Co., Ltd. (headquartered in Kyoto, Japan) has developed a high-speed photodiode KP-H KPDEH12L-CC1C to support 400Gbps transmission systems that use PAM4 (Pulse (News - Alert) Amplitude Modulation 4) inside and between data centers. With the introduction of this InGaAs photodiode, the company is continually supporting the increasing speeds and capacity requirements for transmission systems in 5G networks and beyond. Mass production will start in November, 2020.
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KP-H High-speed Photodiode KPDEH12L-CC1C (Graphic: Business Wire)
KP-H KPDEH12L-CC1C main features
(2) Easy implementation
Background of development
See the following for more information. https://www.kyosemi.co.jp/en/lp/kpdeh12l-cc1c
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