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Global GaAs Wafers Market 2018-2022 - Key Vendors are Advanced Wireless Semiconductor, AXT, DOWA Electronics Materials, Global Communication Semiconductors, IQE & WIN Semiconductor - ResearchAndMarkets.com

[September 12, 2018]

Global GaAs Wafers Market 2018-2022 - Key Vendors are Advanced Wireless Semiconductor, AXT, DOWA Electronics Materials, Global Communication Semiconductors, IQE & WIN Semiconductor - ResearchAndMarkets.com

The "Global GaAs Wafers Market 2018-2022" report has been added to ResearchAndMarkets.com's offering.

The global GaAs wafers market to grow at a CAGR of 12.02% during the period 2018-2022.

Global GaAs Wafers Market 2018-2022, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the market landscape and its growth prospects over the coming years. The report also includes a discussion of the Key vendors operating in this market. To calculate the market size, the report considers the revenue generated from the use in various applications including wireless communication network, mobile devices and aerospace and defense.

The emerging concept of Internet of Things (IoT) will be a major trend contributing to the growth of the gallium arsenide (GaAs) wafers market. GaAs based devices have better functionality and scalability than silicon and other compound semiconductor-based devices. Moreover, greater compatibility of GaAs wafers with IoT network is leading to a demand for high frequency GaAs based communication devices by industries looking to expand their communication infrastructure.

According to the report, one of the major drivers for thismarket is the growth of the solar power industry and launch of several solar power backed schemes in countries such as India, China, Japan, France, Australia and the US. The shift towards renewable sources for electricity production is resulting in growth of the solar industry which in turn is driving the demand for GaAs wafers which are used to make solar cells.

Further, the report states that one of the major factors hindering the growth of this market is the emergence of alternatives such as gallium nitride (GaN) and indium phosphide (InP). GaN can impart high frequency and power to multiple devices whereas InP has greater electron velocities than GaAs making it suitable for power electronic devices. The probability of GaAs devices being substituted by these alternatives is high, thus leading to a negative impact on the GaAs wafers market.

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