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Fairchild Semiconductor Assigned Patent for SiP Substrate
[February 16, 2013]

Fairchild Semiconductor Assigned Patent for SiP Substrate

(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Feb. 16 -- Fairchild Semiconductor, South Portland, Maine, has been assigned a patent (8,372,690) developed by Maria Clemens Y. Quinones, Cebu, Philippines, and Ruben P. Madrid, Lapu-lapu, Philippines, for a SiP substrate.

The abstract of the patent published by the U.S. Patent and Trademark Office states: "Disclosed in this specification is a system-in-a-package substrate that includes an interconnect substrate for permitting finely pitched connections to be made to an integrated circuit. The interconnect substrate includes a central region on its upper surface for receiving the integrated circuit. The interconnect substrate also has interconnections that electrically connect the finely pitched contacts on the upper surface to larger pitched contacts on the lower surface. The larger pitched contacts connect to a conductive trace frame. The resulting assembly is encased in a molding compound along with a plurality of other devices which are configured to interact with one other through the conductive trace." The patent application was filed on Jan. 13, 2011 (13/005,618). The full-text of the patent can be found at Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=8,372,690&OS=8,372,690&RS=8,372,690 Written by Satyaban Rath; edited by Hemanta Panigrahi.

SR0216HP0216-842873 (c) 2013 Targeted News Service

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