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U.S. Patents Awarded to Inventors in Maine (Sept. 18)
[September 18, 2010]

U.S. Patents Awarded to Inventors in Maine (Sept. 18)


(Targeted News Service Via Acquire Media NewsEdge) Targeted News Service Targeted News Service ALEXANDRIA, Va., Sept. 18 -- The following federal patents were awarded to inventors in Maine.

*** Software Predictive Support System Co-Developed by Peaks Island Inventor ALEXANDRIA, Va., Sept. 17 -- Six inventors, including Paul Conley, Peaks Island, Maine, have invented a predictive support system for software. The U.S. Patent was issued on Sept. 14 (No. 7,797,540). Other co-inventors are Todd Chipman and Terence Joseph Clearkin, both of San Jose, Calif., Ian M. Goldstein, San Francisco, Calif., Robert Brass, Natick, Mass., and Benjamin Price, Telopea, Australia.



An abstract of the invention, published by the U.S. Patents and Trademark Office states: "Signatures indicating potential problems can be used by a predictive support component. The predictive support component can check to see if a signature matches data for a data source associated with the software." The patent was assigned to BEA Systems Inc., Redwood Shores, Calif. The application was filed on Dec. 6, 2005 (No. 11/295,255) and the document is available at: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=20100914.PD.&s2=%28ME.INST.%29&OS=ISD/09/14/2010+AND+IS/ME&RS=ISD/09/14/2010+AND+IS/ME *** Access Architecture for Real-Time Communications Co-Developed by Brunswick Inventor ALEXANDRIA, Va., Sept. 17 -- Eleven inventors, including Barbara J. Kittredge, Brunswick, Maine, have invented access architecture for real-time communications. The U.S. Patent was issued on Sept. 14 (No. 7,797,459). Other co-inventors are Marian R. Croak and Alireza Faryar, both of Fair Haven, N.J., Siroos K. Afshar and Karen A. McGregor-Barnes, both of Manalapan, N.J., Enrique G. Cuevas, Holmdel, N.J., Steve Fisher, Morristown, N.J., Magda K. Nassar, Red Bank, N.J., Larry Arnise Russell, Atlantic Highlands, N.J., Radhika R. Roy, Howell, N.J., and Samuel Glazer, New York, N.Y.

An abstract of the invention, published by the U.S. Patents and Trademark Office states: "An access architecture for real-time communications is described. The architecture includes an inter-architecture network utilizing a single protocol, a plurality of border elements in communication with the inter-architecture network and with an external network, and one or more call control elements in communication with said inter-architecture network. The external network utilizes any of a variety of known networking technologies and protocols. The inter-architecture network utilizes a single protocol such as Session Initiated Protocol (SIP). The present architecture provides a single common infrastructure for offering real-time communications services independent of call control protocols and networking technologies." The patent was assigned to AT&T Intellectual Property II L.P., Reno, Nev. The application was filed on Dec. 30, 2003 (No. 10/748,707), and the document is available at: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=2&f=G&l=50&co1=AND&d=PTXT&s1=20100914.PD.&s2=%28ME.INST.%29&OS=ISD/09/14/2010+AND+IS/ME&RS=ISD/09/14/2010+AND+IS/ME *** High Voltage Reduced Surface Field Transistor Devices Co-Developed by Falmouth Inventor ALEXANDRIA, Va., Sept. 17 -- Two inventors, including Steven Leibiger, Falmouth, Maine, have invented high voltage reduced surface field transistor devices. The U.S. Patent was issued on Sept. 14 (No. 7,795,671). The other co-inventor is Gary Dolny, Mountain Top, Pa.


An abstract of the invention, published by the U.S. Patents and Trademark Office states: "A high voltage semiconductor device, such as a Reduced Surface Field (RESURE) transistor, having improved properties, including reduced on state resistance. The device includes a semiconductor substrate; a source region and a drain region provided in the substrate; wherein the source region and the drain region are laterally spaced from each other; and a drift region in the substrate between the source region and the drain region. The drift region includes a structure having at least two spaced trench capacitors extending between the source region and the drain region; and further includes a stack having at least a first region of a first conductivity type, a second region of a second conductivity type, and a third region of the first conductivity type, wherein the stack extends between the source region and the drain region and between the at least first and second trench capacitors and in electrical connection to the first and second trench capacitors. When the device is in an on state, current flows between the source and drain regions through the second region of the second conductivity type; and, when the device is in an off/blocking state, the second conductivity region is depleted four ways into the first and third regions of the stack and into the first and second trench capacitors." The patent was assigned to Fairchild Semiconductor Corp., South Portland, Maine. The application was filed on Jan. 4, 2007 (No. 11/619,671), and the document is available at: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=5&f=G&l=50&co1=AND&d=PTXT&s1=20100914.PD.&s2=%28ME.INST.%29&OS=ISD/09/14/2010+AND+IS/ME&RS=ISD/09/14/2010+AND+IS/ME For more information about Targeted News Service products and services, please contact: Myron Struck, editor, Targeted News Service LLC, Springfield, Va., 703/304-1897; editor@targetednews.com; http://targetednews.com.

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