CGD Forms GaN Eco-System With Chicony Power and Cambridge University Technical Services
Cambridge GaN Devices (CGD), the fabless, clean-tech semiconductor company that develops a range of energy-efficient GaN-based power devices to make greener electronics possible, has signed a tripartite agreement with Chicony Power Technology Co., Ltd (TWSE: 6412) of Taiwan and Cambridge University Technical Services (CUTS), UK, to conceive and develop advanced, efficient, high power-density adapters and data centre power products using GaN. Chicony Power is a well-established total solution provider of power electronics systems focusing on power supplies and adapters for various applications, including notebooks, desktop computers, gaming devices, and server/cloud solutions. Prof. Florin Udrea, the head of the High Voltage Microelectronics and Sensor (HVMS) group at Cambridge University will act as the lead consultant on behalf of CUTS. The HVMS group at Cambridge University has a history of 25 years in power device design, TCAD simulations and characterisation of power devices. The three parties will collaborate around a technical project entitled 'Innovative low power and high power SMPS (switch mode power supplies) with advanced GaN solutions'.
CGD has historic and ongoing links with Cambridge University via CEO, Giorgia Longobardi, and CTO, Florin Udrea who also still leads the HVMS group. Chicony Power is a world leader in switch mode power supplies at the edge of technologic innovation, and the HVMS group at Cambridge University is renowned for their research and innovation in power semiconductor devices so this collaboration represents the creation of a significant GaN eco-system consisting of expertise in systems and applications, research and devices. The project is expected to deliver SMPS prototypes for highly efficient, high-density adapters for notebooks - where Chicony Power is the market leader - and Titanium+ efficiency / High Power Density (> 100W/inch3) CRPS and OCP power shelf (3kW ~ 6kW) power supply unit for data centres and AI server applications.
Recently, CGD launched the second series of its ICeGaN™ 650 V gallium nitride HEMT family. H2 Series ICeGaN HEMTs employ CGD's smart gate interface that virtually eliminates typical e-mode GaN weaknesses, delivering significantly improved overvoltage robustness, higher noise-immune threshold, dV/dt suppression and ESD protection. Like previous-generation devices, the new 650 V H2 ICeGaN transistors are simple to drive using commercially available industry gate drivers. Finally, H2 ICeGaN HEMTs feature a QG that is 10x lower than silicon parts and a QOSS that is 5x less. This greatly reduces switching losses, with corresponding reductions in size and weight.
About Cambridge GaN Devices
About Chicony Power Technology Co., Ltd
About CUTS and HVMS Group at Cambridge University
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