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February 06, 2008

Toshiba Develops Fast Speed Embedded DRAM Technology

By Anuradha Shukla, TMCnet Contributing Editor

Toshiba (News - Alert) has reportedly realized the world’s fastest circuit technology for embedded DRAM for System LSI, achieving a speed of 833MHz at 32Mb density.

According to Toshiba, this technology will be applied to graphic processing LSI. The company explains that since embedded DRAM can read larger data amounts at higher speeds than external memory, they are applied to systems on chips for graphic application. Video images achieve higher levels of definition, and thus higher processing speeds of larger densities are required.
Toshiba applied a “pseudo two port system” to realize high speed operation. This technology virtually divides the overall memory into two and then reads and writes data in parallel and alternately. According to a press release, the company has replaced conventional serial read and write system with the new parallel technology, and optimized such circuits as the command structure. By doing so, Toshiba has achieved the world’s highest level of embedded DRAM performance ad 32Mb, a density actually applicable to products.
System LSI with embedded DRAM memory can be used in next generation high-end digital consumer products, game applications, mobile phones, projectors and other image-related applications that require high speed transfer of large volumes of data.
This technology will be applied in Toshiba’s 65nm system LSI process. The company also intends to use this to meet market demand for advanced graphic applications through the early launch of SoC integrating the new embedded DRAM.
Anuradha Shukla is a contributing editor for TMCnet, covering call centers, CRM and information technology. To see more of her articles, please visit her columnist page.
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