[April 25, 2017] |
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EPC Releases Video Series on How GaN is Changing the Way We Live
Efficient Power Conversion Corporation (www.epc-co.com)
has created and posted to its website six short videos presenting
end-customer applications using eGaN®
FETs and ICs. These videos show how GaN technology is changing
the way we live and challenging power systems design engineers to
incorporate the high performance of gallium nitride FETs and ICs into
their next generation power system designs.
The application demonstration videos posted are:
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APEC
2017: Applications for GaN
At APEC 2017, the premier power
conversion conference, EPC showcased more than 25 applications where
GaN is Changing the Way We Live. In this video, Alex Lidow, CEO, takes
the viewer on a tour of our booth, showing eGaN FETs and ICs in a wide
range of applications including a 2 x 3 foot tabletop wirelessly
powering multiple devices simultaneously.
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Cut
the Cord! GaN-Based Wirelessly Powered Tabletop
In this
video, EPC demonstrates a wireless power tabletop simultaneously
powering a laptop, a video monitor, Google (News - Alert) Home, Amazon Alexa, a desk
lamp, and a cell phone. GaN is making possible wireless power not only
for our phones, but also for our homes.
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LiDAR
GaN Driver
Today's eGaN® FETs and ICs switch ten
times faster than the aging power MOSFET. This high speed gives LiDAR
(Light Distancing and Ranging) systems superior resolution, faster
response time, and greater accuracy. This technology is rapidly
gaining traction in applications where this increased accuracy is
vital, such as autonomous vehicles and augmented reality systems.
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48
V - 1.8 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
With its
latest generation process, EPC has dealt another blow to the silicon
MOSFET power element, bringing improved performance while decreasing
the size and cost. This video shows a side-by-side comparison of a 100
V GaN FET outperforming a comparable MOSFET in a much smaller
footprint with 30% less power loss and 3X the power density.
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150
V - 12 V DC-DC Conversion Gen 5 GaN FET vs. MOSFET
EPC has
dealt another blow to the silicon MOSFET power element, bringing
improved performance while decreasing the size and cost. This video
shows a side-by-side comparison of a 200 V GaN FET outperforming a
comparable MOSFET in a much smaller footprint - 15X smaller - with 40%
less power loss and 3X the power density.
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Motor
Drive Applications
In this video is an example of a 48 V, 10
A 3-phase GaN Inverter reference design from Texas Instruments (News - Alert) using
the LMG5200. The GaN solution has better thermal profiles where heat
sinks can be eliminated and the lower inductance reduces size and
weight. This reference design has an incredible efficiency rating of
98.5%!
According to Alex Lidow, CEO and co-founder of EPC, "This collection of
short videos presents specific end-use applications currently enabled or
enhanced by the high performance of gallium nitride FETs and ICs. These
videos are designed to spark innovation in the use of GaN products by
innovative, forward-thinking power system design engineers."
The GaN application demonstration videos are easily accessible on the EPC
video library or through the EPC
YouTube Video Channel.
About EPC
EPC is the leader in enhancement mode gallium nitride based power
management devices. EPC was the first to introduce enhancement-mode
gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in
applications such as DC-DC
converters, wireless
power transfer, envelope
tracking, RF transmission, power
inverters, remote
sensing technology (LiDAR), and class-D
audio amplifiers with device performance many times greater than the
best silicon power MOSFETs.
www.epc-co.com
eGaN is a registered trademark of Efficient Power Conversion
Corporation, Inc.
View source version on businesswire.com: http://www.businesswire.com/news/home/20170425005492/en/
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