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Research and Markets - Global GaN Radio Frequency Devices Market CAGR Growth of 18.94% by 2020 - Trends, Technologies & Opportunities Report 2016-2020 - Vendors: MACOM, Toshiba, WIN SemiconductorsDUBLIN, October 25, 2016 /PRNewswire/ -- Research and Markets has announced the addition of the "Global GaN Radio Frequency Devices Market 2016-2020" report to their offering. The global GaN radio frequency (RF) devices market is forecast to grow at a CAGR of 18.94% during the period 2016-2020. Sensors and MEMS are an integral part of IoT devices and are manufactured from 200 mm wafer. It is estimated a total of one trillion sensors will be produced in 2020 to support the demand for IoT devices. The growing applications of IoT will have a high impact on semiconductor device manufacturers. Wireless communication technologies driving IoT connectivity include Wi-Fi, Bluetooth, and ZigBee, with Ethernet also having a role to play. Thus, the adoption of IoT is increasing in a number of market segments such as consumer electronics, automotive, and medical, which is expected to auger well for the growth of the market during the forecast period. As a result of the domination of these global players in the semiconductor market, emerging companies such as MACOM are focusing more on GaN technology for RF power semiconductor devices. Though the gallium-based high-power RF semiconductor market is still in the nascent stage, commercialization is taking place. The benefits of GaN include wide bandgap and higher power, energy, and speeds in reaching higher energy states. In addition, the market hold of the leading vendors of the silicon-based RF power devices is not strong enough to prevent emerging companies from developing and using new technologies. Questions Answered:
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Report Structure: PART 01: Executive summary For more information about this report visit http://www.researchandmarkets.com/research/tcvqnv/global_gan_radio Media Contact: Research and Markets 
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