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Panasonic to Launch Industry's Smallest Enhancement-Mode 600V GaN Power Transistors Package*Panasonic (News - Alert) Corporation today announced that it will launch the industry's smallest enhancement-mode[1] gallium nitride (GaN)[2] power transistors (X-GaNTM)** package. The GaN is encapsulated into 8x8 (News - Alert) dual-flat no-lead (DFN) surface-mount package. It is possible to mount the package on small area where it is difficult to mount conventionally and it is contribute to the reduction of the power consumption of industrial and consumer electronics equipment. This Smart News Release features multimedia. View the full release here: http://www.businesswire.com/news/home/20150517005082/en/
*: In the footprints of the 600-V enhancement-mode GaN power transistors
as of May 18, 2015, according to a survey by Panasonic Corporation. The breakdown voltage of the transistors is 600V in an enhancement mode, and the products have achieved a high-speed switching of 200V/ns and a low on-resistance[3] of 54 to 154 mO. The company will ship product samples, 10A type (PGA26E19BV) and 15A type(PGA26E08BV), in July 2015. Power transistor is a semiconductor device to control power supply. GaN is one of remarkable semiconductor compounds and when it is applied to transistor, higher switching performance and higher break down voltage is expected than those of silicon (Si) and silicon carbide (4H-SiC). Our conventional type of GaN power transistor is encapsulated into high heat diffusion surface-mount package TO220 (size:15 x 9.9 x 4.6mm), however the package is not enough to be small and it is limited the mounting area on the printed circuit board in the electronics equipment. The parasitic inductance[4] reduce using surface mounting package and as a result the intrinsic GaN power transistor character, high switching performance, is brought out in smaller size 8 x 8 x 1.25mm under 600V high voltage. The power transistor is accelerated to introduce into electronics equipment and it contributes the reduction of the power consumption. The products will be exhibited at Power Conversion Intelligent Motion 2015 (PCIM 2015) in Nurnberg, Germany from May 19 to 21, 2015. [Features]
The GaN power transistors are applied to AC-DC power supply units (PFCs, insulated DC-DC converters), battery charging systems, PV power conditioners and EV inverters more easily. The company holds 200 domestic patents and 180 overseas patents, including pending applications, such as US 8779438, the basic patent for its original GIT structure, and US 8299737, the basic patent for the driving system that takes advantage of normally-off operations. This work is partially supported by the New Energy and Industrial Technology Development Organization (NEDO), Japan, under the Strategic Development of Energy Conservation Technology Project.
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