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Freescale Semiconductor Assigned Patent for Dynamic Detection Method for Latent Slow-to-erase Bit for High Performance and High Reliability Flash...(Targeted News Service Via Acquire Media NewsEdge) Freescale Semiconductor Assigned Patent for Dynamic Detection Method for Latent Slow-to-erase Bit for High Performance and High Reliability Flash Memory By Targeted News Service ALEXANDRIA, Va., Sept. 16 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,830,756) developed by Fuchen Mu, Austin, Texas, and Chen He, Austin, Texas, for a "dynamic detection method for latent slow-to-erase bit for high performance and high reliability flash memory." The patent application was filed on Jan. 23, 2013 (13/747,504). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,830,756.PN.&OS=PN/8,830,756&RS=PN/8,830,756 Written by Deviprasad Jena; edited by Jaya Anand. DJ0916JA0916-1059966 (c) 2014 Targeted News Service |