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Freescale Semiconductor Assigned Patent for Laterally Double Diffused Metal Oxide Semiconductor Transistors Having Reduced Surface Field Structures(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Sept. 2 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,816,434) developed by four co-inventors for "laterally double diffused metal oxide semiconductor transistors having a reduced surface field structures." The co-inventors are Bernhard H. Grote, Phoenix, Tahir A. Khan, Tempe, Arizona, Vishnu K. Khemka, Phoenix, and Ronghua Zhu, Chandler, Arizona. The patent application was filed on Dec. 19, 2013 (14/133,966). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,816,434.PN.&OS=PN/8,816,434&RS=PN/8,816,434 Written by Deviprasad Jena; edited by Jaya Anand. DJ0902JA0902-1054615 (c) 2014 Targeted News Service [ Back To TMCnet.com's Homepage ] |