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Honeywell International Assigned Patent for Magnetoresistive Random Access Memory (MRAM) Package Including Multilayer Magnetic Security Structure
[August 22, 2014]

Honeywell International Assigned Patent for Magnetoresistive Random Access Memory (MRAM) Package Including Multilayer Magnetic Security Structure


(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., Aug. 22 -- Honeywell International, Morristown, New Jersey, has been assigned a patent (8,811,072) developed by Romney R. Katti, Shorewood, Minnesota, James L. Tucker, Clearwater, Florida, and Anuj Kohli, Apple Valley, Minnesota, for a "magnetoresistive random access memory (MRAM) package including a multilayer magnetic security structure." The patent application was filed on March 13, 2012 (13/419,109). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8,811,072.PN.&OS=PN/8,811,072&RS=PN/8,811,072 Written by Deviprasad Jena; edited by Jaya Anand.



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