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Markets and Markets : Silicon Carbide (SiC) in Semiconductor Market worth $3182.89 Million by 2020(M2 PressWIRE Via Acquire Media NewsEdge) According to a new market research report "Silicon carbide (SiC) in semiconductor market by technology, product, and application (Automotive, Defense, Computers, Consumer Electronics, ICT, Industrial, Medical, Power, Railways, and Solar), by geography - forecast and analysis to 2013 - 2020" the Silicon Carbide (SiC) in Semiconductor Market expected to reach $3182.89 million by 2020; growing at a CAGR of 42.03% from 2014 to 2020. Browse 86 market data tables and 49 figures spread through 250 slides and in-depth TOC on "Silicon carbide (SiC) in semiconductor market". http://www.marketsandmarkets.com/Market-Reports/silicon-carbide-electronics-market-439.html Early buyers will receive 10% customization on this report. Silicon carbide is considered to be the replacement for silicon based semiconductor in the electronics industry. It is a crystalline compound of silicon and carbon and possesses certain qualities such as high strength, low density, hardness, low thermal expansion, and high thermal conductivity thermal shock resistance. SiC based semiconductor device possesses better characteristics compared to silicon based semiconductor. It has band-gap and thermal coefficient three times higher than silicon based semiconductor. Due to these distinct properties, SiC can be used in a harsh environment. Since its discovery in the 1890s the silicon carbide has emerged as a significant material, which was primarily used only as an abrasive; however, with the course of time it started making its presence in many other applications. With the development and advancement in technologies, there is a huge demand for silicon carbide from various sectors of the industry. PDF Brochure @ http://www.marketsandmarkets.com/pdfdownload.asp?id=439 The silicon carbide semiconductor market is estimated to grow $3182.89 Million by 2020, at an estimated CAGR of 42.03% from 2014 to 2020. The players involved in the development of SiC semiconductor market include CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (Sweden), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan). The major driving factors for this market are the ability to operate in harsh environment, development of solar power market, and the demand from military and defense application. The major restraining factor for the development of silicon carbide semiconductor includes huge competition from the development of gallium nitride. Semiconductor devices based on silicon carbide such as high power semiconductor devices and high temperature semiconductor devices are very useful when it comes to the devices being used in harsh conditions. The silicon based semiconductor device is slowly exiting the semiconductor market and is aggressively being replaced with more a powerful material called Silicon Carbide. Growth of Silicon Carbide based semiconductor device is mainly due to the fact that it has found its application in high voltage power electronics market generally high voltage is above one kilo volt (> 1 KV). Thus, sectors such as industrial and power account a major share of revenue from silicon carbide based semiconductor devices. Automotive and transportation sectors are also expected to have huge potential application for the silicon carbide market. These sectors include electric vehicle, railways, and airways. For More Further Details @ http://www.marketsandmarkets.com/Enquiry_Before_Buying.asp?id=439 This report describes the value chain for the silicon carbide semiconductor market by considering all the major stakeholders in the market and their roles in the analysis. The SiC semiconductor market report also provides a detailed study of the Porter's five forces analysis of the market. All the five major factors in these markets have been quantified using the internal key parameters governing each of them. The players involved in the development of silicon carbide based semiconductor market includes CREE Incorporated (U.S.), Fairchild Semiconductor International Inc. (U.S.), Genesic Semiconductor Inc. (U.S.), Infineon Technologies AG (Germany), Microsemi Corporation (U.S.), Norstel AB (Sweden), Renesas Electronics Corporation (Japan), ROHM Co. Ltd. (Japan), STMicroelectronics N.V (Switzerland), and Toshiba Corporation (Japan). 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