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Freescale Semiconductor Assigned Patent for Gate Dimension Control
[July 21, 2014]

Freescale Semiconductor Assigned Patent for Gate Dimension Control


(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., July 21 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,778,742) developed by two co-inventors for methods and systems "for gate dimension control in multi-gate structures for semiconductor devices." The co-inventors are Sung-Taeg Kang, Austin, Texas, and ShanShan Du, Singapore.



The patent application was filed on April 26, 2013 (13/871,411). The full text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=8778742.PN.&OS=PN/8778742&RS=PN/8778742 Written by Eloisa Asedillo; edited by Vessie Ann Abalos.

22AsedilloE07202014-1037860 (c) 2014 Targeted News Service

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