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Global RF GaN Technology & Market Analysis: Forecasts to 2020(GlobeNewswire Via Acquire Media NewsEdge) Dublin, July 14, 2014 (GLOBE NEWSWIRE) -- Research and Markets (http://www.researchandmarkets.com/research/dbntpf/rf_gan_technology) has announced the addition of the "RF GaN Technology & Market Analysis: Applications, Players, Devices & Substrates 2010-2020" report to their offering. Over the last several years, the silicon LDMOS coverage of high-power RF amplification applications in the 2GHz+ frequency range has decreased from 92% to 76%; the remaining 24% market share is mainly addressed by technologies such as GaAs pHEMT or HEMTs GaN. This equilibrium continues to be turned around by GaN HEMTs implementation. GaN HEMTs in wireless telecommunications is a higher-power and higher-frequency transistors alternative. From a system point of view, GaN is cost-competitive in applications over 3.5GHz. GaN devices continue to challenge silicon's dominant position in an industrial playground in which a Power Amplifier (PA) market size of $1600M+ is forecasted for 2020.Today, several companies (i.e. CREE, Triquint/RFMD, Sumitomo, RFHIC, MACOM/Nitronex, Mitsubishi, NXP, Microsemi) have GaN device portfolios covering a wide range of applications. GaN has progressed significantly over the last five years; several thousand devices have been developed and implemented in applications such as radar, CATV, space applications with satellite communication, counter-IED jammers, CATV modules, 3G/4G base-stations, WIMAX/LTE PAs and general purpose applications.In our nominal case, RF GaN-based devices could reach more than 18% of the overall RF device market by 2020 (i.e. a 9 % CAGR from 2013-2020). More details per application, type of devices, business models, etc. can be found in the report. KEY FEATURES OF THE REPORT Covers RF GaN device technology:RF GaN market analysisCommercially-available products overviewRF GaN substrates overviewIndustrial landscapeRF GaN HEMT applications (Wireless telecom, CATV, VSat, Satcom, Defence)Discussion on adoption of RF GaN-on-Si and GaN-on-SiC technologies in targeted applicationsVolume and revenue forecasts to 2020Key Topics Covered: 1. Acronyms 2. Companies cited in this report 3. Report objectives 4. Executive summary 5. Latest news 6. GaN RF device market analysis 7. RF GaN HEMT overview 8. GaN substrates overview 9. GaN RF devices industrial landscape 10. GaN HEMT markets 11. Recent known funding in RF GaN development 12. General conclusions Appendix Companies Mentioned: AT&TAethercommAlcatel-LucentAmmonoArraycomAzzurroBAE SystemsCRHEACelericaCovalent MaterialsCreeDynaxEADSEpiganEricssonEudyna/FujitsuFBHFiltronicFlarion TechnologiesFreescaleFreiburg/Univ. Ulm/Fraunhofer IAFFujitsuFurukawaGlobal Communication SemiconductorsHRL Lab.HitachiCableHittite/KeragisIAFIEMNII-VI Inc.IMECIQEITRIIntegraKDDIKTKopinKymaL3ComLG PlusLockheed MartinLucentLumilog/Saint-GobainMBDAMTI CorporationMacom/NitronexMicroGaNMicrosemiMitsubishiMotorolaNGK InsulatorsNTTNTT DOCOMONXPNanowinNokia-SiemensNorstelNorthrop GrummanNovaganOKIOMMICOn SemiconductorPAM-XiamenPeregrinePowdecQinetiQRFHICRFMD/TriquintRaytheonRenesas Elec.SAAB MicrowaveSEDISK TelecomSOITEC/PicogigaSamsungSamsung Electronic MechanicsSelexSiCrystalSkyworksSoraaSprintSumitomo Electric Devices InnovationSuzhou Jiangzhan SemiconductorT-MobileTDITelstraThalesThales 3-5 lab.ToshibaToyodaGoseiUMSUS Air Force LaboratoryVerizonWIN Semiconductors. For more information visit http://www.researchandmarkets.com/research/dbntpf/rf_gan_technology CONTACT: Research and Markets Laura Wood, Senior Manager [email protected] For E.S.T Office Hours Call 1-917-300-0470 For U.S./CAN Toll Free Call 1-800-526-8630 For GMT Office Hours Call +353-1-416-8900 U.S. Fax: 646-607-1907 Fax (outside U.S.): +353-1-481-1716 Sector: Telecommunications and Networks, Semiconductor Source: Research and Markets 2014 GlobeNewswire, Inc. [ Back To TMCnet.com's Homepage ] |