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Freescale Semiconductor Assigned Patent for Structure with Moving Portion and Buried Electrode(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service ALEXANDRIA, Va., April 11 -- Freescale Semiconductor, Austin, Texas, and Commissariat a l'energie atomique et aux energies alternatives, Paris, have been assigned a patent (8,692,337) developed by six co-inventors for a "structure with a moving portion and a buried electrode for movement detection included in a multi-substrate configuration." The co-inventors are Audrey Berthelot, St. Ismier, France, Vincent Larrey, La Murette, France, Jean-Philippe Polizzi, Grenoble, France, Marie-Helene Vaudaine, Seyssins, France, Hemant Desai, Gilbert, Ariz., and Woo Tae Park, Seoul, South Korea. The patent application was filed on July 11, 2012 (13/546,751). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=86,92,337.PN.&OS=PN/86,92,337&RS=PN/86,92,337 Written by Deviprasad Jena; edited by Jaya Anand. DJ0411JA0411-999198 (c) 2014 Targeted News Service [ Back To TMCnet.com's Homepage ] |