Freescale Semiconductor Assigned Patent for Multiple Device Types Including Inverted-T Channel Transistor and Method Therefor
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 10 -- Freescale Semiconductor, Austin, Texas, has been assigned a patent (8,643,066) developed by Byoung L. Min, Austin, Texas, James D. Burnett, Austin, Texas, and Leo Mathew, Austin, Texas, for "multiple device types including an inverted-T channel transistor and method therefor."
The patent application was filed on Oct. 15, 2008 (12/251,746). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=3&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=116&f=G&l=50&co1=AND&d=PTXT&s1=20140204.PD.&s2=%28TX.ASST.%29&OS=ISD/02/04/2014+AND+AS/TX&RS=ISD/02/04/2014+AND+AS/TX
Written by Balkishan Dalai; edited by Jaya Anand.
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