[February 26, 2013]

Efficient Power Conversion (EPC) to Present Gallium Nitride (GaN) Technology and Applications at the 2013 Applied Power Electronics and Exposition Conference (APEC®)

Efficient Power Conversion Corporation, the world's leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs, will be presenting an educational seminar and several application-focused technical presentations at APEC 2013. The conference will be held in Long Beach, California from March 17^th through the 21^st.

The Premier Event in Applied Power Electronics™, APEC, focuses on the practical and applied aspects of the power electronics business. It is the leading conference for practicing power electronics professionals addressing a broad range of topics in the use, design, manufacture and marketing of all kinds of power electronics components and equipment. For more information on APEC go to: http://www.apec-conf.org/.

"We are honored that the technical review committee of APEC 2013 has selected EPC experts to conduct an educational seminar and to give technical papers focusing on GaN technology at their annual conference. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers," said Alex Lidow, EPC's co-founder and CEO.

Educational Seminar: GaN Transistors for Efficient Power Conversion
Sunday, March 17 (S.7, 2:30 p.m. - 6:00 p.m.)

Expanding on the GaN FET technology textbook written by EPC, this seminar will explain how GaN High Electron Mobility Transistors (HEMT) work. This session will discuss how to use these devices including showing the drivers, layout, and thermal considerations for high performance and high frequency power conversion. To showcase the real-world value of GaN technology, several applications including high frequency envelope tracking (ET), Intermediate Bus Converters (IBC), and wireless power transmission will be presented. The seminar will conclude with a look at the future of this emerging displacement technology.

Technical Presentations Featuring GaN FETs by EPC Experts:

• Rondtable Discussion
  • "Wide band-gap semiconductors - Prime time or promises "
    
    
    
    
    Presenter: Alex Lidow
    Tuesday, March 19 (Session 2, 5:00 p.m. - 6:30 p.m.)
• Technical Sessions
  • "Design of a High Frequency, Low Loss eGaN Converter with Reduced Parasitic Inductances"
    Presenters: David Reusch, Johan Strydom
    Wednesday, March 20 (DC-DC Converters, 2:00 p.m. - 5:30 p.m.)
  • "Using eGaN FETs for Envelope Tracking"
    Presenter: Johan Strydom
    Wednesday, March 20 (IS2.2.4, 8:30 a.m. - 10:15 a.m.)
  • "eGaN FETs Enable Low Power High Frequency Wireless Energy"
    Presenter: Michael de Rooij
    Wednesday, March 20, (IS2.2.3, 8:30 a.m. - 10:15 a.m.)
  • "eGaN FET based HF Resonant Converter"
    Presenter: David Reusch
    Thursday, March 21 (IS1.4.5, 8:30 a.m. - 11:30 a.m.)

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as servers, wireless power transmission, envelope tracking, RF transmission, power-over-ethernet (PoE), solar micro inverters, energy efficient lighting, and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Visit our web site: www.epc-co.com.

Sign-up to receive EPC updates via email: http://bit.ly/EPCupdates or text "EPC" to 22828
Follow EPC on Twitter (News - Alert) at http://twitter.com/#!/EPC_CORP
Like EPC on Facebook (News - Alert) at http://www.facebook.com/EPC.Corporation

Trademarks

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc. All registered trademarks and other trademarks belong to their respective owners.

[ Back To TMCnet.com's Homepage ]