ASM America Assigned Patent
(Targeted News Service Via Acquire Media NewsEdge) By Targeted News Service
ALEXANDRIA, Va., Feb. 4 -- ASM America, Phoenix, has been assigned a patent (8,360,001) developed by Michael A. Todd, Phoenix, and Mark Hawkins, Gilbert, Ariz., for a "process for deposition of semiconductor films."
The abstract of the patent published by the U.S. Patent and Trademark Office states: "Chemical vapor deposition processes utilize chemical precursors that allow for the deposition of thin films to be conducted at or near the mass transport limited regime. The processes have high deposition rates yet produce more uniform films, both compositionally and in thickness, than films prepared using conventional chemical precursors. In preferred embodiments, a higher order silane is employed to deposit thin films containing silicon that are useful in the semiconductor industry in various applications such as transistor gate electrodes."
The patent application was filed on July 16, 2009 (12/504,269.). The full-text of the patent can be found at http://patft.uspto.gov/netacgi/nph-Parser Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=83,60,001.PN.&OS=PN/83,60,001&RS=PN/83,60,001
Written by Amal Ahmed; edited by Jaya Anand.
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